Transistors 2SB1321A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 (1.45) ±0.05 0.8 1.0 ■ Features 3.5±0.1 For general amplification Complementary to 2SD1992A 0.85 14.5±0.5 0.65 max. • Large collector power dissipation PC (600 mW) • Allowing supply with the radial taping +0.1 ■ Absolute Maximum Ratings Ta = 25°C 1 Symbol Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −50 V Emitter to base voltage VEBO −7 V Peak collector current ICP −1 A Collector current IC −500 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2 3 2.5±0.1 Parameter 2.5±0.5 +0.1 2.5±0.5 0.45−0.05 0.45−0.05 1: Emitter 2: Collector 3: Base MT1 Type Package Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1.2±0.1 0.65 max. 0.45+− 0.1 0.05 (HW Type) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit ICBO VCB = −20 V, IE = 0 − 0.1 µA ICEO VCE = −20 V, IB = 0 −1 µA Collector to base voltage VCBO IC = −10 µA, IE = 0 −60 V Collector to emitter voltage VCEO IC = −2 mA, IB = 0 −50 V Emitter to base voltage VEBO IE = −10 µA, IC = 0 −7 Forward current transfer ratio *1 hFE1 *2 VCE = −10 V, IC = −10 mA 85 hFE2 VCE = −10 V, IC = −500 mA 40 VCE(sat) IC = −300 mA, IB = −30 mA Collector cutoff current Collector to emitter saturation voltage Transition frequency VCB = −10 V, IE = 10 mA, f = 200 MHz fT Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz V 340 − 0.35 − 0.6 200 6 V MHz 15 pF Note) *1: Pulse measurement *2: Rank classification Rank Q R S No-rank hFE1 85 to 170 120 to 240 170 to 340 85 to 340 Product of no-rank is not classified and have no indication for rank. 1 2SB1321A Transistors PC Ta IC VCE IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −600 400 300 −400 200 −3 mA −2 mA −200 100 0 20 40 60 80 100 120 140 160 0 –2 −10 −3 Ta = 75°C 25°C −25°C –8 –10 −100 0 –12 Base current IB (mA) 600 IC / IB = 10 −30 −10 −3 25°C −1 Ta = −25°C 75°C − 0.03 −1 −3 −10 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 −1 −3 VCE = −10 V 500 400 300 Ta = 75°C 25°C −25°C 200 100 0 − 0.01 − 0.03 − 0.1 − 0.3 −10 Cob VCB 24 200 180 160 140 120 100 80 60 40 20 20 −10 VCER RBE IE = 0 f = 1 MHz Ta = 25°C 22 Collector output capacitance Cob (pF) VCB = −10 V Ta = 25°C −3 18 16 14 12 10 8 6 4 −120 Collector to emitter voltage VCER (V) fT IE 240 −1 Collector current IC (A) Collector current IC (A) Collector current IC (A) 220 0 −1 −2 −3 −4 −5 −6 −7 −8 −9 −10 hFE IC − 0.1 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 Transition frequency fT (MHz) –6 − 0.3 − 0.03 IC = −2 mA Ta = 25°C −100 −80 −60 −40 −20 2 1 2 3 5 10 20 30 50 Emitter current IE (mA) 2 –4 −100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) IC / IB = 10 − 0.1 −200 VBE(sat) IC −30 − 0.3 −300 −1 mA VCE(sat) IC −1 −400 Collector to emitter voltage VCE (V) Ambient temperature Ta (°C) −100 −500 Forward current transfer ratio hFE 0 Collector current IC (mA) −600 −800 500 VCE = −10 V Ta = 25°C −700 −1 000 600 0 −800 Ta = 25°C Collector current IC (mA) Collector power dissipation PC (mW) 700 0 IC IB −1 200 800 100 0 −1 −2 −3 −5 −10 −20−30 −50 −100 Collector to base voltage VCB (V) 0 1 3 10 30 100 300 1 000 Base to emitter resistance RBE (kΩ) Transistors 2SB1321A ICEO Ta 104 VCE = −10 V ICEO (Ta) ICEO (Ta = 25°C) 103 102 10 1 0 20 40 60 80 100 120 140 160 180 200 Ambient temperature Ta (°C) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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