Transistor 2SC3354 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 3.0±0.2 4.0±0.2 ■ Features (Ta=25˚C) marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter 1 2 3 2.0±0.2 ■ Absolute Maximum Ratings 15.6±0.5 ● Optimum for high-density mounting. Allowing supply with the radial taping. High transition frequency fT. 0.7±0.1 ● +0.2 0.45–0.1 ● 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 100µA, IE = 0 30 V Emitter to base voltage VEBO IE = 10µA, IC = 0 3 V Forward current transfer ratio hFE VCB = 10V, IE = –2mA 25 Base to emitter voltage VBE VCB = 10V, IE = –2mA 720 Common base reverse transfer capacitance Crb VCE = 6V, IC = 0, f = 1MHz 0.8 Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz Transition frequency fT* VCB = 10V, IE = –15mA, f = 200MHz Power gain PG VCB = 10V, IE = –1mA, f = 100MHz *h FE 600 250 mV pF 1 1.5 pF 1200 1600 MHz 17 dB Rank classification Rank T S fT(MHz) 600 ~ 1300 900 ~ 1600 1 2SC3354 Transistor PC — Ta IC — VCE 60 Ta=25˚C 200 100 50 40 IB=300µA 30 250µA 200µA 20 150µA 100µA 10 –25˚C 40 30 20 10 0 60 80 100 120 140 160 0 0 2 10 3 1 Ta=75˚C 25˚C 0.1 –25˚C 0.03 3 12 10 30 1000 Ta=75˚C 120 25˚C –25˚C 80 40 0 30 100 Collector to base voltage VCB (V) Reverse transfer impedance Zrb (Ω) 1 10 6V 800 600 400 200 0.3 1 3 10 30 0 – 0.1 – 0.3 100 100 80 60 40 VCE=6V 10V 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Cre — VCE f=2MHz Ta=25˚C 20 –1 Emitter current IE (mA) Zrb — IE 2 2.0 VCB=10V 1200 120 3 1.6 f=100MHz Ta=25˚C 160 Cob — VCB 4 1.2 1600 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 0.8 fT — I E 200 0 0.1 100 5 3 0.4 Base to emitter voltage VBE (V) 1400 Collector current IC (mA) 1 0 VCE=10V Forward current transfer ratio hFE 30 1 10 240 IC/IB=10 0.3 8 hFE — IC 100 0.01 0.1 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 4 Transition frequency fT (MHz) 40 –3 Emitter current IE (mA) –10 Common emitter reverse transfer capacitance Cre (pF) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Ta=75˚C 50µA 0 Collector output capacitance Cob (pF) Collector current IC (mA) 300 VCE=10V 25˚C 50 400 0 2 IC — VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 500 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 2SC3354 Transistor PG — IE Power gain PG (dB) 25 NF — IE 12 f=100MHz Rg=50Ω Ta=25˚C VCE=10V f=100MHz Rg=50kΩ Ta=25˚C VCE=10V 10 6V Noise figure NF (dB) 30 20 15 10 5 8 6 4 2 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Emitter current IE (mA) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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