Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA0838 (2SA838) Unit: mm 5.0±0.2 Optimum for RF amplification of FM/AM radios. High transition frequency fT. ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.27 1.27 2.3±0.2 ● 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 0.1 µA Collector cutoff current ICBO VCB = 10V, IE = 0 Forward current transfer ratio hFE* VCB = 10V, IE = –1mA 70 Transition frequency fT VCB = 10V, IE = –1mA, f = 200MHz 150 Noise figure NF VCB = 10V, IE = –1mA, f = 5MHz 2.8 4 dB Reverse transfer impedance Zrb VCB = 10V, IE = –1mA, f = 2MHz 22 50 Ω Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz 0.9 1.5 pF *h FE 220 250 MHz Rank classification Rank B C hFE 70 ~ 140 110 ~ 220 Note.) The Part number in the Parenthesis shows conventional part number. 1 2SC1359 Transistor PC — Ta IC — VCE IC — IB 12 15.0 Ta=25˚C 450 300 250 200 150 100 80µA 8 60µA 6 4 40µA 2 20µA 20 40 60 80 100 120 140 160 5.0 0 0 Ambient temperature Ta (˚C) 6 12 18 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V 50 Collector current IC (mA) 100 80 60 40 20 25˚C 40 Ta=75˚C –25˚C 30 20 10 0 0 0.4 0.6 0.8 1.0 0 Base to emitter voltage VBE (V) 0.4 0.8 1.2 1.6 2.0 25˚C 120 –25˚C 80 40 VCB=10V 6V 300 250 200 150 100 50 0 0.1 0.3 1 3 10 10 3 1 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.1 0.3 30 Collector current IC (mA) 100 1 3 60 Ta=25˚C 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 Reverse transfer impedance Zrb (Ω) Transition frequency fT (MHz) Ta=75˚C 160 IC/IB=10 10 30 100 Collector current IC (mA) 400 350 100 Zrb — IE VCE=10V 200 80 30 fT — IE 240 60 100 Base to emitter voltage VBE (V) hFE — IC 40 VCE(sat) — IC 60 VCE=10V Ta=25˚C 0.2 20 Base current IB (µA) IC — VBE 120 0 0 Collector to emitter voltage VCE (V) IB — VBE Base current IB (mA) 7.5 2.5 0 0 Forward current transfer ratio hFE 10.0 50 0 2 12.5 Collector current IC (mA) 350 VCE=10V Ta=25˚C IB=100µA 10 400 Collector current IC (mA) Collector power dissipation PC (mW) 500 VCB=10V f=2MHz Ta=25˚C 50 40 30 20 10 0 – 0.1 – 0.3 –1 –3 Emitter current IE (mA) –10 2SC1359 Transistor PG — IE 24 20 2.0 IC=3mA 1mA 1.5 1.0 16 12 8 0.5 6 4 1 3 10 30 2 0 – 0.1 – 0.3 100 –1 –3 –10 –30 Emitter current IE (mA) bie — gie 20 Reverse transfer susceptance bre (mS) 0 yie=gie+jbie VCE=10V f=10.7MHz yre=gre+jbre VCE=10V –7mA 100 IE=–1mA 12 IE=–1mA – 0.2 58 –2mA – 0.3 8 58 – 0.4 f=10.7MHz 66 100 – 0.5 0 0 8 16 24 32 40 Input conductance gie (mS) – 0.6 – 0.5 –1 –3 –10 bfe — gfe – 0.1 16 – 0.3 Emitter current IE (mA) bre — gre 24 –4mA 0 – 0.1 –100 0 Forward transfer susceptance bfe (mS) 0.3 Collector to emitter voltage VCE (V) Input susceptance bie (mS) 8 4 0 0.1 VCB=6V f=100MHz Rg=50Ω Ta=25˚C 10 Noise figure NF (dB) 2.5 NF — IE 12 f=100MHz VCB=10V Ta=25˚C f=10.7MHz Ta=25˚C Power gain PG (dB) Common emitter reverse transfer capacitance Cre (pF) Cre — VCE 3.0 – 0.1mA f=10.7MHz 58 10.7 –1mA 100 –20 58 –2mA 100 –40 IE=–4mA –60 58 100 –80 –100 yfe=gfe+jbfe VCE=10V –120 – 0.4 – 0.3 – 0.2 – 0.1 10 Reverse transfer conductance gre (mS) 0 20 40 60 80 Forward transfer conductance 100 gfe (mS) boe — goe 1.2 Output susceptance boe (mS) yoe=goe+jboe VCE=10V 1.0 0.8 IE=–1mA 100 0.6 58 0.4 0.2 f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5 Output conductance goe (mS) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR