SLOTTED PHOTOINTERRUPTER MIT-5A116 Description Package Dimensions The MIT-5A116 consists of a Gallium Arsenide in- Unit: mm ( inches ) 1 4 frared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter. 3 2 14.0 (.551) 0.5 ± 0.10 0.8 (.031) Dual - in - line socket mounting l Fast switching speed l Choice of mounting configuration. 0.5 10.0 (.394) (.394) l 10 MIN For- direct pc board or (.020) 2.54 NOM 10.3 ± 0.3 (.406) (.100) A-A SECTION 1.0 (.040) MIN 2-φ 0.7 ± 0.1 (.028) 6.6 ± 0.1 (.260) 6.0 (.236) 2.35 ± 0.1 (.093) (.205) l 5.2 ± 0.1 Non -contact switching 0.7 (.028) A l 7.5 ± 0.3 (.295) 2.5 (.098) Features 7.0 (.276) 5.0 ± 0.2 (.197) A (.146) 3.7 ± 0.2 (.020) NOTE 1. Tolerance is ± 0.25 mm (.006") unless otherwise noted. Absolute Maximum Ratings @TA =25 oC Parameter Symbol Maximum Rating Unit IF 50 mA Reverse Voltage VR 5 V Power Dissipation Pad 75 mW Collector-emitter breakdown voltage V(BR)CEO 30 V OUTPUT Emitter-Collector breakdown voltage V(BR)ECO 5 V PC 75 mW PTOT 100 Continuous Forward Current INPUT Collector power dissipation Total power dissipation o mW o Operating Temperature Range Topr -25 C to + 85 C Storage Temperature Range Tstg -40oC to +100oC Unity Opto Technology Co., Ltd. 04/01/2002 MIT-5A116 @TA =25 oC Optical-Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit. Forward Voltage VF - 1.2 1.4 V Reverse Current IR - - 10 µA VR =5V Iceo - - 100 nA Vce =10V Collector Emitter VCE(SAT) - - 0.4 V Ic=0.1mA,Ee=0.1mW/cm2 Collector Current Ic (on) 0.5 - 10 mA IF =20mA, Vce =5V Transfer ChaResponse Time (RISE) tr - 20 100 µS Ic=100µA, Vce =5V racteristics Response Time (FALL) tf - 20 100 µS RL =1k, d =1mm 25 50 Input Output Collector Dark Current Test Conditions IF =20mA 60 Power Dissipation (mW) Forward Current IF (mA) Typical Optical-Electrical Characteristic Curves 50 40 30 20 10 0 -25 0 25 50 75 120 100 PTOT 80 PD , PC 60 40 20 0 100 -25 Collector Current Ic (µA) 80 60 40 20 0 0.8 1.2 1.6 2.0 2.4 Collector Current Ic (µA) Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage 700 Ta=25℃ 600 20mA 500 400 IF=15mA 300 10mA 200 4mA 100 0 0 2 4 6 8 10 12 Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce Unity Opto Technology Co., Ltd. 700 75 100 25 30 Vce=2V Ta=25℃ 600 500 400 300 200 100 0 2.8 0 Relative Collector Current (%) Forward Current IF (mA) 100 0 Ambient Temperature TA ( oC ) Fig.2 Power Dissipation vs Ambient Temperature Ambient Temperature TA Fig.1 forward Current VS. Ambient Temperature 5 10 15 20 Forward Current IF (mA) Fig.4 Collector Current vs Forward Voltage 120 100 80 60 40 20 0 -25 0 25 50 75 100 Ambient Temperature TA ( oC ) Fig.6 Relative Collector Current VS. TA 04/01/2002 MIT-5A116 10-6 1000 VCE=20V Response Time (µs) Collector Dark Current ICEO Typical Optical-Electrical Characteristic Curves -7 10 -8 10 10-9 10-10 0 25 50 75 V CE =2V I C =100mA 100 Ta=25 ℃ 10 1 0.1 0.01 100 Ambient Temperature TA ( oC ) Fig.7 Collector Dark Current vs. Ambient Temperature 100 Relative Sensitivity (%) 0.1 1 10 100 Load Resistance Rt (KΩ) Fig.8 Response Time vs. Load Resistance Response Time Measurement Circuit Ta=25℃ 80 60 Input 0 40 t 90 % 10 % Output 0 20 t tr 0 700 800 900 1000 1100 1200 Input Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side) tf IL VCC VR Output Sensing Position Characteristics (Typical) Relative light current IL (%) X 100 Y I F =20mA V CE =5V I F =20mA V CE =5V Ta=25 o C Ta=25 o C (Center of optical axis) 50 X Y 0 0 0 -3 -2 -1 0 1 2 3 -3 -2 -1 0 1 2 3 + + Distance d (mm) Unity Opto Technology Co., Ltd. 04/01/2002