7MBR15SA120 IGBT Modules IGBT MODULE (S series) 1200V / 15A / PIM Features · Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Symbol Inverter Collector-Emitter voltage Gate-Emitter voltage Continuous ICP 1ms Collector current Brake Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Converter Condition VCES VGES IC Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive) Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque -IC PC VCES VGES IC Rat ing Tc=25°C Tc=80°C Tc=25°C Tc=80°C 1 device Continuous ICP 1ms PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso 1 device Tc=25°C Tc=80°C Tc=25°C Tc=80°C 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. 1200 ±20 25 15 50 30 15 110 1200 ±20 25 15 50 30 110 1200 1600 15 155 120 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A A A W V V A A W V V A A A 2s °C °C V N·m 7MBR15SA120 IGBT Modules Electrical characteristics (Tj=25°C unless otherwise specified) Item Symbol Condition Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.1 2.15 2.6 1800 Unit Inverter Min. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Turn-on time Cies ton tr tr(i) toff tf VF Turn-off Brake Forward on voltage Converter IF=15A 0.35 0.25 0.1 0.45 0.08 2.3 2.35 chip terminal Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage trr ICES IGES VCE(sat) Turn-on time Reverse current Forward on voltage ton tr toff tf IRRM VFM Reverse current Resistance IRRM R B value B IF=15A VCES=1200V, VGE=0V VCE=0V, VGE=±20V IC=15A, VGE=15V chip terminal VCC=600V IC=15A VGE=±15V RG=82Ω VR=1200V IF=15A chip terminal VR=1600V T=25°C T=100°C T=25/50°C Symbol Condition Turn-off time Thermistor VCE=1200V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=15mA VGE=15V, Ic=15A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=600V IC=15A VGE=±15V RG=82Ω 2.1 2.2 0.35 0.25 0.45 0.08 1.1 1.2 465 3305 mA µA V V pF µs 1.2 0.6 1.0 0.3 V 3.2 0.35 1.0 0.2 2.6 1.2 0.6 1.0 0.3 1.0 µs mA V 1.5 1.0 5000 495 3375 µs mA µA V mA Ω 520 3450 K Thermal resistance Characteristics Item Min. Thermal resistance ( 1 device ) Contact thermal resistance Rth(j-c) * Rth(c-f) Characteristics Typ. Max. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Unit 1.14 1.85 1.14 1.30 0.05 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [B ra k e ] [In v er ter ] [T h e rm is to r] 2 2 (P 1 ) 8 2 0 (G u) 1(R) 2(S) 3(T) 1 8 (G v) 1 9 (E u ) 7 (B ) 1 4 (G b) 1 7 (E v ) 4 (U ) 1 3 (G x) 1 6 (G w ) 1 5 (E w ) 5 (V ) 1 2 (G y) 6 (W ) 1 1 (G z) 1 0 (E n ) 23(N) 2 4 (N 1 ) 9 °C/W 7MBR15SA120 IGBT Modules Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage [ Inverter ] Collector current vs. Collector-Emitter voltage o o Tj= 25 C (typ.) 35 Tj= 125 C (typ.) 35 15V 15V 12V 12V VGE= 20V 30 30 25 25 Collector current : Ic [ A ] Collector current : Ic [ A ] VGE= 20V 20 10V 15 10 5 20 10V 15 10 5 8V 8V 0 0 0 1 2 3 4 5 0 1 2 3 4 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage o 35 Tj= 25 C (typ.) 10 o 5 o Tj= 25 C Tj= 125 C 30 Collector - Emitter voltage : VCE [ V ] 8 20 15 10 6 4 Ic= 30A Ic= 15A 2 Ic= 7.5A 5 0 0 0 1 2 3 4 5 5 Collector - Emitter voltage : VCE [ V ] 20 25 [ Inverter ] Dynamic Gate charge (typ.) o o Vcc=600V, Ic=15A, Tj= 25 C VGE=0V, f= 1MHz, Tj= 25 C Collector - Emitter voltage : VCE [ V ] 5000 Capacitance : Cies, Coes, Cres [ pF ] 15 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) Cies 1000 500 Coes 100 10 1000 25 800 20 600 15 400 10 200 5 Cres 50 0 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 0 50 100 Gate charge : Qg [ nC ] 0 150 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 25 7MBR15SA120 IGBT Modules [ Inverter ] Switching time vs. Collector current (typ.) [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=82Ω, Tj=25°C 1000 Vcc=600V, VGE=±15V, Rg=82Ω, Tj=125°C 1000 toff toff 500 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 500 ton tr 100 ton tr tf 100 tf 50 50 0 5 10 15 20 25 0 5 10 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) 25 Vcc=600V, VGE=±15V, Rg=82Ω Switching loss : Eon, Eoff, Err [ mJ/pulse ] 5 1000 500 toff ton tr 4 o Eon(125 C) 3 o Eon(25 C) 2 o Eoff(125 C) o Eoff(25 C) 1 o Err(125 C) 100 tf o Err(25 C) 50 0 30 100 Gate resistance : Rg [ 1000 0 5 10 Ω] 20 25 30 [ Inverter ] Reverse bias safe operating area 12 +VGE=15V, -VGE= <15V, Rg>82Ω, Tj<125°C = = 40 10 15 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=15A, VGE=±15V, Tj=125°C Eon 30 8 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 20 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, Ic=15A, VGE=±15V, Tj=25°C 5000 15 Collector current : Ic [ A ] 6 4 20 10 Eoff 2 Err 0 0 30 100 Gate resistance : Rg [ 1000 Ω] 0 200 400 600 800 1000 Collector - Emitter voltage : VCE [ V ] 1200 1400 IGBT Modules 7MBR15SA120 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=82 Ω [ Inverter ] Forward current vs. Forward on voltage (typ.) 35 300 o o Tj=125 C 30 Tj=25 C o trr(125 C) Reverse recovery current : Irr [ A ] Forward current : IF [ A ] 20 15 10 Reverse recovery time : trr [ nsec ] 100 25 o trr(25 C) 50 o Irr(125 C) 10 5 o Irr(25 C) 0 5 0 1 2 3 4 0 10 Forward on voltage : VF [ V ] 20 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 35 o Tj= 25 C o Tj= 125 C 30 Forward current : IF [ A ] 25 20 15 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 Forward on voltage : VFM [ V ] [ Thermistor ] Temperature characteristic (typ.) Transient thermal resistance 200 5 100 FWD[Inverter] IGBT [Inverter,Brake] Resistance : R [ k Ω ] o Thermal resistanse : Rth(j-c) [ C/W ] Conv. Diode 1 0.1 10 1 0.01 0.001 0.01 0.1 Pulse width : Pw [ sec ] 1 0.1 -60 -40 -20 0 20 40 60 Temperature [ 80 o C] 100 120 140 160 180 7MBR15SA120 IGBT Modules [ Brake ] Collector current vs. Collector-Emitter voltage [ Brake ] Collector current vs. Collector-Emitter voltage o o Tj= 25 C (typ.) 35 15V VGE= 20V 15V VGE= 20V 12V 30 30 25 25 Collector current : Ic [ A ] Collector current : Ic [ A ] Tj= 125 C (typ.) 35 20 10V 15 10 5 12V 10V 20 15 10 5 8V 8V 0 0 0 1 2 3 4 5 0 Collector - Emitter voltage : VCE [ V ] 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage o Tj= 25 C (typ.) 10 35 o o Tj= 125 C Tj= 25 C 30 Collector - Emitter voltage : VCE [ V ] 8 20 15 10 6 4 Ic= 30A Ic= 15A 2 Ic= 7.5A 5 0 0 0 1 2 3 4 5 5 20 Vcc=600V, Ic=15A, Tj= 25 o C Collector - Emitter voltage : VCE [ V ] 5000 Capacitance : Cies, Coes, Cres [ pF ] 15 25 [ Brake ] Dynamic Gate charge (typ.) [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 10 Gate - Emitter voltage : VGE [ V ] Collector - Emitter voltage : VCE [ V ] Cies 1000 500 Coes o C 1000 25 800 20 600 15 400 10 200 5 100 Cres 50 0 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 0 50 100 Gate charge : Qg [ nC ] 0 150 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 25 IGBT Modules Outline Drawings, mm 7MBR15SA120