7MBR10NE120 IGBT Modules IGBT MODULE 1200V / 10A / PIM Features · High Speed Switching · Voltage Drive · Low Inductance Module Structure · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Converter Brake Inverter Item Symbol VCES VGES IC Collector current ICP -IC Collector power disspation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power disspation PC Repetitive peak reverse voltage VRRM Average forward current IF(AV) Surge current IFSM Repetitive peak reverse voltage VRRM Non-Repetitive peak reverse voltage VRSM Average output current IO Surge current (Non-Repetitive) IFSM I²t (Non-Repetitive) Condition Collector-Emitter voltage Gate-Emitter voltage Operating junction temperature Storage temperature Isolation voltage Mounting screw torque Tj Tstg Viso *1 Recommendable value : 1.3 to 1.7 N·m (M4) Continuous 1ms 1 device Continuous 1ms 1 device 10ms 50Hz/60Hz sine wave Tj=150°C, 10ms Tj=150°C, 10ms AC : 1 minute Ra ting 1200 ±20 10 20 10 60 1200 ±20 5 12.5 40 1200 1 50 1600 1700 25 320 512 +150 -40 to +125 AC 2500 1.7 *1 Unit V V A A A W V V A A W V A A V V A A A²s °C °C V N·m 7MBR10NE120 IGBT Module Electrical characteristics (Tj=25°C unless without specified) Item Symbol Condition Characteristics Typ. Max. 1.0 0.1 4.5 7.5 3.3 3.0 2100 Unit Min. Inverter (IGBT) Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Collector-Emitter voltage Input capacitance Switching time Converter Brake (FWD) Brake (IGBT) Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Switching time Reverse current Reverse recovery time Forward voltage Reverse current ICES IGES VGE(th) VCE(sat) -VCE Cies ton tr toff tf trr ICES IGES VCE(sat) ton tr toff tf IRRM VCE=1200V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=10mA VGE=15V, Ic=10A -Ic=10A VGE=0V, VCE=10V, f=1MHz VCC=600V IC=10A VGE=±15V RG=62 ohm IF=10A VCES=1200V, VGE=0V VCE=0V, VGE=±20V IC=5A, VGE=15V VCC=600V IC=5A VGE=±15V RG=120 ohm VR=1200V trr VFM IRRM IF=25A VR=1600V 1.2 0.6 1.5 0.5 0.35 1.0 0.1 3.55 0.8 0.6 1.5 0.5 1 0.6 1.4 1.0 mA µA V V V pF µs µs µs µs µs mA µA V µs µs µs µs mA µs V mA Thermal Characteristics Item Symbol Condition Min. Thermal resistance ( 1 device ) Contact thermal resistance * Rth(j-c) Rth(c-f) Inverter IGBT Inverter FRD Brake IGBT Converter Diode With thermal compound * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic Characteristics Typ. Max. 1.67 3.30 3.12 3.40 0.05 Unit °C/W 7MBR10NE120 IGBT Module Characteristics (Representative) Inverter Collector current vs. Collector-Emitter voltage Tj=125°C 25 25 20 20 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25°C 15 10 5 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C 10 VCE [V] 10 8 Collector-Emitter voltage : VCE [V] 10 5 0 Collector-Emitter voltage : 15 6 4 2 0 8 6 4 2 0 0 5 10 15 20 25 0 5 10 Gate-Emitter voltage : VGE [V] 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=62 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=600V, RG=62 ohm, VGE=±15V, Tj=125°C 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 1000 100 100 10 10 0 5 10 Collector current : Ic [A] 15 20 0 5 10 Collector current : Ic [A] 15 20 7MBR10NE120 IGBT Module 25 800 20 600 15 400 10 200 5 Collector-Emitter voltage : VCE [V] Switching time : ton, tr, toff, tf [n sec.] 1000 1000 100 0 0 0 100 100 200 300 Gate charge : Qg [nC] Gate resistance : RG [ohm] Reverse recovery characteristics trr, Irr, vs. IF Forward current vs. Forward voltage VGE=0V 25 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] Forward current : IF [A] 20 15 10 5 100 10 1 0 0 1 2 3 4 0 5 5 10 15 20 Forward current : IF [A] Forward voltage : VF [V] Reversed biased safe operating area > < 125°C, RG = +VGE=15V, -VGE < = 15V, Tj = 62 ohm Transient thermal resistance 80 Collector current : Ic [A] Thermal resistance : Rth (j-c) [°C/W] 100 1 60 40 20 0.1 0.001 0 0.01 Pulse width : PW [sec.] 0.1 1 0 200 400 600 800 1000 Collector-Emitter voltage : VCE [V] 1200 Gate-Emitter voltage : VGE [V] Dynamic input characteristics Tj=25°C Switching time vs. RG Vcc=600V, Ic=10A, VGE=±15V, Tj=25°C IGBT Module 7MBR10NE120 Capacitance vs. Collector-Emitter voltage Tj=25°C Switching loss vs. Collector current Vcc=600V, RG=62 ohm, VGE=±15V 10 Capacitance : Cies, Coes, Cres [nF] Switching loss : Eon, Eoff, Err [mJ /cycle] 4 3 2 1 1 0.1 0 0 5 10 15 20 Converter Diode Forward current vs. Forward voltage 30 Forward current : IF [A] 25 20 15 10 5 0 0 0.5 1.0 Forward voltage : VF [V] 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Collector current : Ic [A] 1.5 2.0 30 35 7MBR10NE120 IGBT Module Brake Collector current vs. Collector-Emitter voltage Tj=125°C 12.5 12.5 10.0 10.0 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25°C 7.5 5.0 2.5 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C 10 VCE [V] 10 8 Collector-Emitter voltage : VCE [V] 5.0 2.5 0.0 Collector-Emitter voltage : 7.5 6 4 2 0 8 6 4 2 0 0 5 10 15 20 25 0 5 Gate-Emitter voltage : VGE [V] 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=120 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=600V, RG=120 ohm, VGE=±15V, Tj=125°C 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 1000 100 100 10 10 0 2 4 6 Collector current : Ic [A] 8 10 0 2 4 6 Collector current : Ic [A] 8 10 7MBR10NE120 IGBT Module 25 800 20 600 15 400 10 200 5 Collector-Emitter voltage : VCE [V] Switching time : ton, tr, toff, tf [n sec.] 1000 1000 100 0 0 0 1000 100 20 40 60 80 100 Gate charge : Qg [nC] Gate resistance : RG [ohm] Reversed biased safe operating area < 15V, Tj < > 120 ohm +VGE=15V, -VGE = = 125°C, RG = Transient thermal resistance 40 Collector current : Ic [A] Thermal resistance : Rth (j-c) [°C/W] 50 1 30 20 10 0 0.1 0.001 0.01 0.1 0 1 200 Pulse width PW [sec.] 400 600 800 1000 Collector-Emitter voltage : VCE [V] 1200 Capacitance vs. Collector-Emitter voltage Tj=25°C Switching loss vs. Collector current Vcc=600V, RG=120 ohm, VGE=±15V Capacitance : Cies, Coes, Cres [nF] Switching loss : Eon, Eoff, Err [mJ /cycle] 2 1 1 0.1 0 0 2 4 6 Collector current : Ic [A] 8 10 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] 30 35 Gate-Emitter voltage : VGE [V] Dynamic input characteristics Tj=25°C Switching time vs. RG Vcc=600V, Ic=5A, VGE=±15V, Tj=25°C IGBT Module 7MBR10NE120 Outline Drawings, mm Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com