ETC AT93C86-10SC-2.7

Features
• Low-voltage and Standard-voltage Operation
•
•
•
•
•
•
•
•
•
– 5.0 (VCC = 4.5V to 5.5V)
– 2.7 (VCC = 2.7V to 5.5V)
User Selectable Internal Organization
– 16K: 2048 x 8 or 1024 x 16
3-wire Serial Interface
Sequential Read Operation
Schmitt Trigger, Filtered Inputs for Noise Suppression
2 MHz Clock Rate (5V) Compatibility
Self-timed Write Cycle (10 ms max)
High Reliability
– Endurance: 1 Million Write Cycles
– Data Retention: 100 Years
– ESD Protection: >4000V
Automotive Grade and Extended Temperature Devices Available
8-pin PDIP, 8-pin JEDEC SOIC, and 8-pin TSSOP Packages
3-wire Serial
EEPROM
16K (2048 x 8 or 1024 x 16)
Description
AT93C86
The AT93C86 provides 16384 bits of serial electrically erasable programmable read
only memory (EEPROM) organized as 1024 words of 16 bits each when the ORG Pin
is connected to VCC and 2048 words of 8 bits each when it is tied to ground. The
device is optimized for use in many industrial and commercial applications where low
power and low voltage operations are essential. The AT93C86 is available in space
saving 8-pin PDIP, 8-pin JEDEC SOIC and 8-pin TSSOP packages.
(continued)
Pin Configurations
Pin Name
Function
CS
Chip Select
SK
Serial Data Clock
DI
Serial Data Input
DO
Serial Data Output
GND
Ground
VCC
Power Supply
ORG
Internal Organization
DC
Don’t Connect
8-pin PDIP
1
2
3
4
CS
SK
DI
DO
VCC
DC
ORG
GND
8
7
6
5
8-pin SOIC
CS
SK
DI
DO
1
2
3
4
8
7
6
5
VCC
DC
ORG
GND
8-pin TSSOP
CS
SK
DI
DO
1
2
3
4
8
7
6
5
VCC
DC
ORG
GND
Rev. 1237B–06/01
1
The AT93C86 is enabled through the Chip Select pin (CS),
and accessed via a 3-wire serial interface consisting of
Data Input (DI), Data Output (DO), and Shift Clock (SK).
Upon receiving a READ instruction at DI, the address is
decoded and the data is clocked out serially on the data
output pin DO. The WRITE cycle is completely self-timed
and no separate ERASE cycle is required before WRITE.
The WRITE cycle is only enabled when the part is in the
ERASE/WRITE ENABLE state. When CS is brought “high”
following the initiation of a WRITE cycle, the DO pin outputs the READY/BUSY status of the part.
The AT93C86 is available in 4.5V to 5.5V and 2.7V to 5.5V
versions.
Absolute Maximum Ratings*
*NOTICE:
Operating Temperature.................................. -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
Voltage on any Pin
with Respect to Ground .....................................-1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
DC Output Current........................................................ 5.0 mA
Block Diagram
Vcc
GND
MEMORY ARRAY
ORG
2048 x 8
OR
1024 x 16
ADDRESS
DECODER
DATA
REGISTER
OUTPUT
BUFFER
DI
Note:
2
1.
CS
MODE
DECODE
LOGIC
SK
CLOCK
GENERATOR
DO
When the ORG pin is connected to Vcc, the x 16 organization is selected. When it is connected to ground, the x 8 organization is selected. If the ORG pin is left unconnected and the application does not load the input beyond the capability of the
internal 1 Meg ohm pullup, then the x 16 organization is selected. This feature is not available on the 1.8V devices.
Pin Capacitance(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted).
Symbol
Test Conditions
COUT
CIN
Note:
Max
Units
Conditions
Output Capacitance (DO)
5
pF
VOUT = 0V
Input Capacitance (CS, SK, DI)
5
pF
VIN = 0V
1. This parameter is characterized and is not 100% tested.
DC Characteristics
Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +2.7V to +5.5V,
TAC = 0°C to +70°C, VCC = +2.7V to +5.5V (unless otherwise noted).
Symbol
Parameter
VCC1
Supply Voltage
VCC2
Supply Voltage
ICC
Supply Current
ISB1
Standby Current
ISB2
Test Condition
Min
Typ
Max
Unit
2.7
5.5
V
4.5
5.5
V
READ at 1.0 MHz
0.5
2.0
mA
WRITE at 1.0 MHz
0.5
2.0
mA
VCC = 2.7V
CS = 0V
6.0
10.0
µA
Standby Current
VCC = 5.0V
CS = 0V
17
30
µA
IIL
Input Leakage
VIN = 0V to VCC
0.1
1.0
µA
IOL
Output Leakage
VIN = 0V to VCC
0.1
1.0
µA
VIL1 (1)
VIH1(1)
Input Low Voltage
Input High Voltage
4.5V ≤ VCC ≤ 5.5V
-0.6
VCC x 0.7
VCC x 0.3
VCC + 1
V
VIL2 (1)
VIH2(1)
Input Low Voltage
Input High Voltage
VCC ≤ 2.7V
-0.6
VCC x 0.7
VCC x 0.3
VCC + 1
V
VOL1
VOH1
Output Low Voltage
Output High Voltage
4.5V ≤ VCC ≤ 5.5V
0.4
V
VOL2
VOH2
Output Low Voltage
Output High Voltage
VCC ≤ 2.7V
Note:
VCC = 5.0V
IOL = 2.1 mA
IOH = -0.4 mA
2.4
IOL = 0.15 mA
IOH = -100 µA
V
0.2
VCC - 0.2
V
V
1. VIL min and VIH max are reference only and are not tested.
3
AC Characteristics
Applicable over recommended operating range from TA = -40°C to + 85°C, VCC = As Specified,
CL = 1 TTL Gate and 100 pF (unless otherwise noted).
Symbol
Parameter
Test Condition
Min
Typ
fSK
SK Clock
Frequency
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
0
0
tSKH
SK High Time
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
250
250
ns
tSKL
SK Low Time
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
250
250
ns
tCS
Minimum CS
Low Time
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
250
250
ns
tCSS
CS Setup Time
Relative to SK
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
50
50
ns
tDIS
DI Setup Time
Relative to SK
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
100
100
ns
tCSH
CS Hold Time
Relative to SK
0
ns
tDIH
DI Hold Time
Relative to SK
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
100
100
ns
tPD1
Output Delay to ‘1’
AC Test
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
250
250
ns
tPD0
Output Delay to ‘0’
AC Test
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
250
250
ns
tSV
CS to Status Valid
AC Test
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
250
250
ns
tDF
CS to DO in High
Impedance
AC Test
CS = VIL
4.5V ≤ VCC ≤ 5.5V
2.7V ≤ VCC ≤ 5.5V
100
100
ns
10
ms
tWP
Write Cycle Time
0.1
Endurance
Note:
(1)
4.5V ≤ VCC ≤ 5.5V
Max
Units
2
1
MHz
4
5.0V, 25°C, Page Mode
1M
ms
Write Cycles
1. This parameter is characterized and is not 100% tested.
Instruction Set for the AT93C86
Address
Instruction
Data
SB
Op Code
x8
x 16
READ
1
10
A10 - A0
A9 - A0
Reads data stored in memory,
at specified address.
EWEN
1
00
11XXXXXXXX
11XXXXXXXX
Write enable must precede all
programming modes.
ERASE
1
11
A10 - A0
A9 - A0
WRITE
1
01
A10 - A0
A9 - A0
4
x8
x 16
Comments
Erases memory location An - A0.
D7 - D0
D15 - D0
Writes memory location An - A0.
Instruction Set for the AT93C86
Address
Instruction
Data
SB
Op Code
x8
x 16
ERAL
1
00
10XXXXXXXX
10XXXXXXXX
WRAL
1
00
01XXXXXXXX
01XXXXXXXX
EWDS
1
00
00XXXXXXXX
00XXXXXXXX
x8
x 16
Comments
Erases all memory locations.
Valid only at VCC = 4.5V to 5.5V.
D7 - D0
D15 - D0
Writes all memory locations.
Valid when VCC = 4.5V to 5.5V and
Disable Register cleared.
Disables all programming instructions.
Functional Description
The AT93C86 is accessed via a simple and versatile 3-wire
serial communication interface. Device operation is controlled by seven instructions issued by the host processor.
A valid instruction starts with a rising edge of CS and
consists of a Start Bit (logic “1”) followed by the appropriate
Op Code and the desired memory Address location.
READ (READ): The Read (READ) instruction contains
the Address code for the memory location to be read. After
the instruction and address are decoded, data from the
selected memory location is available at the serial output
pin DO. Output data changes are synchronized with the rising edges of serial clock SK. It should be noted that a
dummy bit (logic “0”) precedes the 8- or 16-bit data output
string.
ERASE/WRITE (EWEN): To assure data integrity, the
part automatically goes into the Erase/Write Disable
(EWDS) state when power is first applied. An Erase/Write
Enable (EWEN) instruction must be executed first before
any programming instructions can be carried out. Please
note that once in the Erase/Write Enable state, programming remains enabled until an Erase/Write Disable
(EWDS) instruction is executed or VCC power is removed
from the part.
ERASE (ERASE): The Erase (ERASE) instruction programs all bits in the specified memory location to the logical
“1” state. The self-timed erase cycle starts once the
ERASE instruction and address are decoded. The DO pin
outputs the READY/BUSY status of the part if CS is
brought high after being kept low for a minimum of 250 ns
(tCS). A logic “1” at pin DO indicates that the selected memory location has been erased, and the part is ready for
another instruction.
WRITE (WRITE): The Write (WRITE) instruction contains
the 8 or 16 bits of data to be written into the specified memory location. The self-timed programming cycle, tWP, starts
after the last bit of data is received at serial data input pin
DI. The DO pin outputs the READY/BUSY status of the part
if CS is brought high after being kept low for a minimum of
250 ns (tCS). A logic “0” at DO indicates that programming
is still in progress. A logic “1” indicates that the memory
location at the specified address has been written with the
data pattern contained in the instruction and the part is
ready for further instructions. A READY/BUSY status cannot be obtained if the CS is brought high after the end
of the self-timed programming cycle, tWP.
ERASE ALL (ERAL): The Erase All (ERAL) instruction
programs every bit in the memory array to the logic “1”
state and is primarily used for testing purposes. The DO pin
outputs the READY/BUSY status of the part if CS is
brought high after being kept low for a minimum of 250 ns
(tCS). The ERAL instruction is valid only at V CC = 5.0V ±
10%.
WRITE ALL (WRAL): The Write All (WRAL) instruction
programs all memory locations with the data patterns specified in the instruction. The DO pin outputs the
READY/BUSY status of the part if CS is brought high after
being kept low for a minimum of 250 ns (tCS). The WRAL
instruction is valid only at VCC = 5.0V ± 10%.
ERASE/WRITE DISABLE (EWDS): To protect against
accidental data disturb, the Erase/Write Disable (EWDS)
instruction disables all programming modes and should be
executed after all programming operations. The operation
of the READ instruction is independent of both the EWEN
and EWDS instructions and can be executed at any time.
5
Timing Diagrams
Synchronous Data Timing
Note:
1.
This is the minimum SK period.
Organization Key for Timing Diagrams
AT93C86 (16K)
READ Timing
6
I/O
x8
x 16
AN
A10
A9
DN
D7
D15
EWEN Timing
tCS
CS
SK
DI
1
0
0
1
...
1
EWDS Timing
tCS
CS
SK
DI
1
0
0
0
...
0
WRITE Timing
tCS
CS
SK
DI
DO
1
0
1
AN
...
A0
DN
...
D0
HIGH IMPEDANCE
BUSY
READY
tWP
WRAL Timing(1)
tCS
CS
SK
DI
DO
1
0
0
0
1
...
DN
...
D0
BUSY
HIGH IMPEDANCE
READY
tWP
Note:
1.
Valid only at VCC = 4.5V to 5.5V.
7
ERASE Timing
tCS
CS
STANDBY
CHECK
STATUS
SK
DI
1
1
1
AN
AN-1 AN-2
...
A0
tDF
tSV
DO
HIGH IMPEDANCE
HIGH IMPEDANCE
BUSY
READY
tWP
ERAL Timing(1)
tCS
CS
CHECK
STATUS
STANDBY
tSV
tDF
SK
DI
DO
1
0
0
1
0
BUSY
HIGH IMPEDANCE
HIGH IMPEDANCE
READY
tWP
Note:
8
1.
Valid only at VCC = 4.5V to 5.5V.
AT93C86 Ordering Information
tWP (max)
(ms)
ICC (max)
(µA)
ISB (max)
(µA)
fMAX
(kHz)
10
2000
30.0
10
800
Ordering Code
Package
Operation Range
2000
AT93C86-10PC
AT93C86-10SC
AT93C86-10TC
8P3
8S1
8T
Commercial
(0°C to 70°C)
30.0
2000
AT93C86-10PI
AT93C86-10SI
AT93C86-10TI
8P3
8S1
8T
Industrial
(-40°C to 85°C)
10.0
1000
AT93C86-10PC-2.7
AT93C86-10SC-2.7
AT93C86-10TC-2.7
8P3
8S1
8T
Commercial
(0°C to 70°C)
10.0
1000
AT93C86-10PI-2.7
AT93C86-10SI-2.7
AT93C86-10TI-2.7
8P3
8S1
8T
Industrial
(-40°C to 85°C)
Package Type
8P3
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8T
8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
Options
Blank
Standard Operation (4.5V to 5.5V)
-2.7
Low Voltage (2.7V to 5.5V)
9
Packaging Information
8P3, 8-Lead, 0.300" Wide, Plastic Dual Inline
Package (PDIP)
Dimensions in Inches and (Millimeters)
8S1, 8-Lead, 0.150" Wide, Plastic Gull Wing Small
Outline (JEDEC SOIC)
Dimensions in Inches and (Millimeters)
JEDEC STANDARD MS-001 BA
.020 (.508)
.013 (.330)
.400 (10.16)
.355 (9.02)
PIN
1
.280 (7.11)
.240 (6.10)
.157 (3.99)
.150 (3.81)
PIN 1
.244 (6.20)
.228 (5.79)
.037 (.940)
.027 (.690)
.300 (7.62) REF
.050 (1.27) BSC
.210 (5.33) MAX
.100 (2.54) BSC
SEATING
PLANE
.196 (4.98)
.189 (4.80)
.068 (1.73)
.053 (1.35)
.015 (.380) MIN
.150 (3.81)
.115 (2.92)
.022 (.559)
.014 (.356)
.070 (1.78)
.045 (1.14)
.010 (.254)
.004 (.102)
.325 (8.26)
.300 (7.62)
0
REF
8
0
REF
15
.012 (.305)
.008 (.203)
.430 (10.9) MAX
8T, 8-Lead, 0.170" Wide Thin Shrink Small Outline
Package (TSSOP)
Dimensions in Millimeters and (Inches)*
PIN 1
6.50 (.256)
6.25 (.246)
0.30 (.012)
0.19 (.008)
3.10 (.122)
2.90 (.114)
1.05 (.041)
0.80 (.033)
.65 (.026) BSC
1.20 (.047) MAX
0.15 (.006)
0.05 (.002)
4.5 (.177)
4.3 (.169)
0.20 (.008)
0.09 (.004)
0 REF
8
0.75 (.030)
0.45 (.018)
*Controlling dimension: millimeters
10
.050 (1.27)
.016 (.406)
.010 (.254)
.007 (.203)
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© Atmel Corporation 1999.
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1237B–06/01/xM