PROFET® BTS 442 E2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection2) • Electrostatic discharge (ESD) protection Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 63 V 4.5 ... 42 V 18 mΩ 21 A 70 A TO-220AB/5 5 5 5 Standard 1 Straight leads 1 SMD Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. R bb Voltage Overvoltage Current Gate source protection limit protection + V bb 3 V Logic 2 Voltage Charge pump sensor Level shifter Limit for unclamped ind. loads Rectifier IN OUT 5 Temperature sensor Open load ESD 4 Logic Load detection ST Short circuit detection GND PROFET 1 Signal GND 1) 2) Load GND No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads Semiconductor Group Page 1 of 14 1999-Mar.-22 BTS 442 E2 Pin Symbol Function 1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage, the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT (Load, L) O Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 °C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) Symbol Vbb VLoad dump3) Values IL Tj Tstg Ptot self-limited -40 ...+150 -55 ...+150 167 A °C 2.1 2.0 J kV -0.5 ... +6 ±5.0 ±5.0 V mA ≤ 0.75 ≤ 75 ≤ tbd K/W EAS VESD VIN IIN IST 63 80 Unit V V W see internal circuit diagrams page 6... Thermal resistance 3) 4) chip - case: junction - ambient (free air): SMD version, device on pcb 4): RthJC RthJA VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group Page 2 1999-Mar.-22 BTS 442 E2 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 5 A Tj=25 °C: RON Tj=150 °C: IL(ISO) Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or GND pulled up, VIN= 0, see diagram page 7, Tj =-40...+150°C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C Operating Parameters Operating voltage 5) Tj =-40...+150°C: Undervoltage shutdown Tj =-40...+150°C: Undervoltage restart Tj =-40...+150°C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150°C: Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: 6 ) Overvoltage protection Tj =-40°C: Ibb=40 mA Tj =25...+150°C: Standby current (pin 3) Tj=-40...+25°C: VIN=0 Tj=150°C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1) 7), VIN=5 V 5) 6) 7) -- 15 18 mΩ 17 28 21 35 -- A -- -- 1 mA ton toff 100 10 --- 350 130 µs dV /dton 0.2 -- 2 V/µs -dV/dtoff 0.4 -- 5 V/µs Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) 4.5 2.4 --- ---6.5 42 4.5 4.5 7.5 V V V V ∆Vbb(under) -- 0.2 -- V Vbb(over) Vbb(o rst) ∆Vbb(over) Vbb(AZ) --0.2 -67 12 18 6 52 ---- V V V V 25 60 -- µA IL(off) 42 42 -60 63 ---- IGND -- 1.1 -- mA IL(GNDhigh) Ibb(off) µA At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group Page 3 1999-Mar.-22 BTS 442 E2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Protection Functions Initial peak short circuit current limit (pin 3 to 5) 8), IL(SCp) ( max 400 µs if VON > VON(SC) ) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150°C: td(SC) Values min typ max Unit --45 -95 -- 140 --- A 30 70 -- A 80 -- 400 µs VON(CL) -- 58 -- V VON(SC) Tjt ∆Tjt EAS ELoad12 ELoad24 -150 --- 8.3 -10 -- ---2.1 1.7 1.2 V °C K J --- -120 32 -- V Ω 2 2 --- 1900 1500 mA min value valid only, if input "low" time exceeds 30 µs Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 30 mA Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation 9), Tj Start = 150 °C, single pulse Vbb = 12 V: Vbb = 24 V: Reverse battery (pin 3 to 1) 10) Integrated resistor in Vbb line Diagnostic Characteristics Open load detection current (on-condition) 8) -Vbb Rbb Tj=-40 °C: IL (OL) Tj=25..150°C: Short circuit current limit for max. duration of td(SC) max=400 µs, prior to shutdown While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL(t) dt, approx. VON(CL) 2 EAS= 1/2 * L * IL * ( ), see diagram page 8 VON(CL) - Vbb 10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). 9) Semiconductor Group Page 4 1999-Mar.-22 BTS 442 E2 Parameter and Conditions Symbol Values min typ max VIN(T+) 1.5 -- 2.4 V VIN(T-) 1.0 -- -- V -1 0.5 -- -30 V µA at Tj = 25 °C, Vbb = 12 V unless otherwise specified Input and Status Feedback11) Input turn-on threshold voltage Tj =-40..+150°C: Input turn-off threshold voltage Tj =-40..+150°C: Unit Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V ∆ VIN(T) IIN(off) On state input current (pin 2), VIN = 3.5 V IIN(on) 10 25 50 µA Status invalid after positive input slope (short circuit) Tj=-40 ... +150°C: Status invalid after positive input slope (open load) Tj=-40 ... +150°C: Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: ST low voltage Tj =-40...+150°C, IST = +1.6 mA: td(ST SC) 80 200 400 µs td(ST) 350 -- 1600 µs VST(high) VST(low) 5.4 -- 6.1 -- -0.4 V 11) If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group Page 5 1999-Mar.-22 BTS 442 E2 Truth Table Input- Output level level 442 D2 442 E2 L H L H L H L H L H L H L H L H H H H L H L H H (L13)) L L L14) L14) L L H H H L H L H H (L13)) L L H H H H Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage Status 12) H L L H H L L L L L L L = "Low" Level H = "High" Level Terms Status output +5V Ibb 3 I IN 2 Vbb IN V VST IN OUT PROFET I ST V R ST(ON) IL 4 5 ST GND 1 bb R GND IGND ST VON VOUT GND ESDZD ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Input circuit (ESD protection) R IN I ESDZDI1 ZDI2 I I GND ZDI1 6.1 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). 12) 13) 14) Power Transistor off, high impedance Low resistance short Vbb to output may be detected by no-load-detection No current sink capability during undervoltage shutdown Semiconductor Group Page 6 1999-Mar.-22 BTS 442 E2 Short Circuit detection Open-load detection Fault Condition: VON > 8.3 V typ.; IN high ON-state diagnostic condition: VON < RON * IL(OL); IN high + V bb + V bb V ON VON ON OUT Logic unit Short circuit detection OUT Open load detection Logic unit Inductive and overvoltage output clamp + V bb V GND disconnect Z V ON 3 OUT GND 2 IN Vbb PROFET VON clamped to 58 V typ. 4 V bb IN V 5 ST GND Overvolt. and reverse batt. protection V OUT 1 ST V GND + V bb V R IN Z Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. R bb IN GND disconnect with GND pull up Logic V R ST ST OUT 3 GND PROFET 2 IN R GND Vbb PROFET Signal GND Rbb = 120 Ω typ., VZ +Rbb*40 mA = 67 V typ., add RGND, RIN, RST for extended protection 4 OUT 5 ST GND 1 V V bb V IN ST V GND Any kind of load. If V GND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Semiconductor Group Page 7 1999-Mar.-22 BTS 442 E2 Vbb disconnect with charged inductive load Inductive Load switch-off energy dissipation E bb 3 high 2 IN PROFET 4 E AS Vbb OUT IN 5 PROFET ST = GND 1 V ELoad Vbb ST OUT EL GND ER bb Energy dissipated in PROFET EAS = Ebb + EL - ER. 3 high 2 IN PROFET 4 2 ELoad < EL, EL = 1/2 * L * I L Vbb OUT 5 ST GND 1 V bb Semiconductor Group Page 8 1999-Mar.-22 BTS 442 E2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type Logic version BTS 442D2 442E2 Overtemperature protection Tj >150 °C, latch function 15)16) Tj >150 °C, with auto-restart on cooling Short-circuit to GND protection switches off when VON>8.3 V typ.15) (when first turned on after approx. 200 µs) D E X X X X X X Undervoltage shutdown with auto restart X X Overvoltage shutdown with auto restart X X overtemperature X X short circuit to GND X X -17) -17) open load X X undervoltage X - overvoltage X - Open load detection in OFF-state with sensing current 30 µA typ. in ON-state with sensing voltage drop across power transistor Status feedback for short to Vbb Status output type CMOS X X Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X Load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) 15) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 16) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 17) Low resistance short V to output may be detected by no-load-detection bb Semiconductor Group Page 9 1999-Mar.-22 BTS 442 E2 Timing diagrams Figure 2b: Switching an inductive load Figure 1a: Vbb turn on: IN IN t d(bb IN) V bb td(ST) ST *) V V OUT OUT A ST open drain I L IL(OL) t A t in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 µs *) if the time constant of load is too large, open-load-status may occur Figure 2a: Switching a lamp, Figure 3a: Turn on into short circuit, IN IN ST ST V OUT V OUT td(SC) I L I L t t td(SC) approx. 200µs if Vbb - VOUT > 8.3 V typ. Semiconductor Group Page 10 1999-Mar.-22 BTS 442 E2 Figure 3b: Turn on into overload, Figure 4a: Overtemperature: Reset if Tj <Tjt IN IN IL ST I L(SCp) IL(SCr) V OUT T ST J t t Heating up may require several milliseconds, Vbb - VOUT < 8.3 V typ. Figure 5a: Open load: detection in ON-state, turn on/off to open load Figure 3c: Short circuit while on: IN IN ST ST V V OUT IL t d(ST) OUT I L **) t open t **) current peak approx. 20 µs Semiconductor Group Page 11 1999-Mar.-22 BTS 442 E2 Figure 5b: Open load: detection in ON-state, open load occurs in on-state Figure 6b: Undervoltage restart of charge pump VON [V] VON(CL) V on IN off t d(ST OL1) t ST d(ST OL2) V V off OUT V V bb(u rst) normal I open V normal L V bb(over) bb(o rst) bb(u cp) bb(under) on V bb t Vbb [V] td(ST OL1) = tbd µs typ., t d(ST OL2) = tbd µs typ charge pump starts at Vbb(ucp) =6.5 V typ. Figure 7a: Overvoltage: Figure 6a: Undervoltage: IN IN V bb Vbb V bb(under) V ON(CL) Vbb(over) V bb(o rst) Vbb(u cp) V bb(u rst) V OUT V OUT ST ST open drain t Semiconductor Group Page 12 t 1999-Mar.-22 BTS 442 E2 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 BTS 442 E2 TO-220AB/5, Option E3043 Ordering code Ordering code Q67060-S6206-A2 BTS 442 E2 E3043 Q67060-S6206-A3 SMD TO-220AB/5, Opt. E3062 Ordering code BTS442E2 E3062A T&R: Semiconductor Group Page 13 Q67060-S6206-A4 1999-Mar.-22 BTS 442 E2 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, D-81541 München Siemens AG 1999. All Rights Reserved Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing: Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components18) of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems 19) with the express written approval of the Semiconductor Group of Siemens AG. 18) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 19) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered. Semiconductor Group Page 14 1999-Mar.-22