PROFET® BTS 542 E2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation · Overload protection · Current limitation · Short-circuit protection · Thermal shutdown · Overvoltage protection (including load dump) · Fast demagnetization of inductive loads · Reverse battery protection1) · Undervoltage and overvoltage shutdown with Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 63 V 4.5 ... 42 V 18 mW 21 A 70 A auto-restart and hysteresis · Open drain diagnostic output · Open load detection in ON-state · CMOS compatible input · Loss of ground and loss of Vbb protection2) · Electrostatic discharge (ESD) protection TO-218AB/5 5 Application · mC compatible power switch with diagnostic Standard feedback for 12 V and 24 V DC grounded loads · All types of resistive, inductive and capacitve loads · Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. R Voltage Overvoltage Current Gate source protection limit protection V 2 bb + V bb 3 Logic Voltage Charge pump sensor Level shifter Limit for unclamped ind. loads Rectifier IN OUT 5 Temperature sensor Open load ESD 4 Logic Load detection ST Short circuit detection GND PROFET 1 Signal GND 1) 2) Load GND No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads Semiconductor Group Page 1 of 13 8.Jan.96 BTS 542 E2 Pin Symbol Function 1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage, the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT (Load, L) O Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 W, RL= 1.1 W, td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 °C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) Symbol Vbb VLoad dump3) Values IL Tj Tstg Ptot self-limited -40 ...+150 -55 ...+150 167 A °C 2.1 2.0 J kV -0.5 ... +6 ±5.0 ±5.0 V mA EAS VESD VIN IIN IST 63 80 Unit V V W see internal circuit diagrams page 6... Thermal resistance 3) chip - case: junction - ambient (free air): RthJC RthJA £ 0.75 K/W £ 45 VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Semiconductor Group Page 2 8.Jan.96 BTS 542 E2 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 5 A 18 35 -- mW 17 15 28 21 -- -- 1 mA 100 10 --- 350 130 ms 0.2 -- 2 V/ms 0.4 -- 5 V/ms 4.5 2.4 --- ---6.5 42 4.5 4.5 7.5 V V V V DVbb(under) -- 0.2 -- V Vbb(over) Vbb(o rst) DVbb(over) Vbb(AZ) --0.2 -67 12 18 6 52 ---- V V V V 25 60 -- mA IL(off) 42 42 -60 63 ---- IGND -- 1.1 -- mA Tj=25 °C: RON Tj=150 °C: Nominal load current (pin 3 to 5) IL(ISO) ISO Proposal: VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or IL(GNDhigh) GND pulled up, VIN= 0, see diagram page 7, Tj =-40...+150°C Turn-on time to 90% VOUT: ton Turn-off time to 10% VOUT: toff RL = 12 W, Tj =-40...+150°C Slew rate on dV /dton 10 to 30% VOUT, RL = 12 W, Tj =-40...+150°C Slew rate off -dV/dtoff 70 to 40% VOUT, RL = 12 W, Tj =-40...+150°C Operating Parameters Operating voltage 4) Tj =-40...+150°C: Undervoltage shutdown Tj =-40...+150°C: Undervoltage restart Tj =-40...+150°C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150°C: Undervoltage hysteresis DVbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: Overvoltage protection5) Tj =-40°C: Ibb=40 mA Tj =25...+150°C: Standby current (pin 3) Tj=-40...+25°C: VIN=0 Tj=150°C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)6), VIN=5 V 4) 5) 6) Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Ibb(off) -- A mA At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT »Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group Page 3 8.Jan.96 BTS 542 E2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Protection Functions Initial peak short circuit current limit (pin 3 to 5)7), IL(SCp) ( max 400 ms if VON > VON(SC) ) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150°C: td(SC) Integrated resistor in Vbb line Diagnostic Characteristics Open load detection current (on-condition) 7) 8) 9) Unit --45 -95 -- 140 --- A 30 70 -- A 80 -- 400 ms VON(CL) -- 58 -- V VON(SC) Tjt DTjt EAS ELoad12 ELoad24 -150 --- 8.3 -10 -- ---2.1 1.7 1.2 V °C K J --- -120 32 -- V 2 2 --- 1900 1500 min value valid only, if input "low" time exceeds 30 ms Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 30 mA Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation8), Tj Start = 150 °C, single pulse Vbb = 12 V: Vbb = 24 V: Reverse battery (pin 3 to 1) 9) Values min typ max -Vbb Rbb Tj=-40 °C: IL (OL) Tj=25..150°C: W mA Short circuit current limit for max. duration of td(SC) max=400 ms, prior to shutdown While demagnetizing load inductance, dissipated energy in PROFET is EAS= ò VON(CL) * iL(t) dt, approx. VON(CL) 2 EAS= 1/2 * L * IL * ( ), see diagram page 8 VON(CL) - Vbb Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of » 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 W). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). Semiconductor Group Page 4 8.Jan.96 BTS 542 E2 Parameter and Conditions Symbol Values min typ max VIN(T+) 1.5 -- 2.4 V VIN(T-) 1.0 -- -- V 0.5 -- -30 V mA at Tj = 25 °C, Vbb = 12 V unless otherwise specified Input and Status Feedback10) Input turn-on threshold voltage Unit Tj =-40..+150°C: Input turn-off threshold voltage Tj =-40..+150°C: Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V D VIN(T) IIN(off) -1 On state input current (pin 2), VIN = 3.5 V IIN(on) 10 25 50 mA Status invalid after positive input slope (short circuit) Tj=-40 ... +150°C: Status invalid after positive input slope (open load) Tj=-40 ... +150°C: Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: ST low voltage Tj =-40...+150°C, IST = +1.6 mA: td(ST SC) 80 200 400 ms td(ST) 350 -- 1600 ms VST(high) VST(low) 5.4 -- 6.1 -- -0.4 V 10) If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group Page 5 8.Jan.96 BTS 542 E2 Truth Table Input- Output level level 542 D2 542 E2 L H L H L H L H L H L H L H L H H H H L H L H H (L12)) L L L13) L13) L L H H H L H L H H (L12)) L L H H H H Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage Status 11) H L L H H L L L L L L L = "Low" Level H = "High" Level Terms Status output 3 I IN PROFET I ST V bb V IN VST Vbb IN 2 +5V Ibb 4 ST OUT IL R ST(ON) VON 5 GND 1 R GND GND IGND VOUT ST ESDZD ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 250 W at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Input circuit (ESD protection) R IN I ESDZDI1 ZDI2 I I GND ZDI1 6.1 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). 11) Power Transistor off, high impedance Low resistance short Vbb to output may be detected by no-load-detection 13) No current sink capability during undervoltage shutdown 12) Semiconductor Group Page 6 8.Jan.96 BTS 542 E2 Short Circuit detection Open-load detection Fault Condition: VON > 8.3 V typ.; IN high ON-state diagnostic condition: VON < RON * IL(OL); IN high + V bb +V bb V ON Logic unit VON ON OUT Short circuit detection OUT Logic unit Open load detection Inductive and overvoltage output clamp + V V bb GND disconnect Z V ON 3 OUT 2 GND IN PROFET VON clamped to 58 V typ. 4 Overvolt. and reverse batt. protection V bb +V R IN V Z ST V V IN ST OUT 5 GND 1 VGND bb R bb Any kind of load. In case of Input=high is VOUT » VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. IN GND disconnect with GND pull up Logic V R ST Vbb ST OUT 3 GND PROFET 2 R GND IN Vbb PROFET Signal GND 4 Rbb = 120 W typ., VZ +Rbb*40 mA = 67 V typ., add RGND, RIN, RST for extended protection ST OUT 5 GND 1 V bb V V IN ST V GND Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Semiconductor Group Page 7 8.Jan.96 BTS 542 E2 Vbb disconnect with charged inductive load Inductive Load switch-off energy dissipation E bb EAS 3 high 2 Vbb IN PROFET 4 ST OUT IN 5 PROFET = GND 1 ST ELoad Vbb GND OUT EL ER V bb Energy dissipated in PROFET EAS = Ebb + EL - ER. 3 high IN 2 PROFET 4 ST 2 ELoad < EL, EL = 1/2 * L * I L Vbb OUT 5 GND 1 V bb Semiconductor Group Page 8 8.Jan.96 BTS 542 E2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type Logic version BTS 542D2 542E2 Overtemperature protection Tj >150 °C, latch function14)15) Tj >150 °C, with auto-restart on cooling Short-circuit to GND protection switches off when VON>8.3 V typ.14) (when first turned on after approx. 200 ms) D E X X X X X X Undervoltage shutdown with auto restart X X Overvoltage shutdown with auto restart X X X X Open load detection in OFF-state with sensing current 30 mA typ. in ON-state with sensing voltage drop across power transistor Status feedback for overtemperature X X -16) -16) open load X X undervoltage X - overvoltage X - short circuit to GND short to Vbb Status output type CMOS X X Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X Load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) 14) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ¹ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 15) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 16) Low resistance short V to output may be detected by no-load-detection bb Semiconductor Group Page 9 8.Jan.96 BTS 542 E2 Timing diagrams Figure 2b: Switching an inductive load Figure 1a: Vbb turn on: IN IN V bb t d(bb IN) td(ST) ST AAAA AAAA AA*)AA AA AAAAAA AA AAAAAA V V OUT AAA AAAAAAAAAAAAAAA AA AAAAAAAAA AA AAAAAAA AAAAAAA AAA AA AA AAA AA AA AAA AA AA AAA AA AA AAA AA AA AAA AA AA AAA AA AA AAA AA AA A AAA AAAAAA AA AAA AA AAA AAAA AAAAAAA AA AAA AAAAAA AA AAA AA AAA AAAA AAAAAAA AA OUT ST open drain I AAAAAAAAAAAAAAAAA AAA AAA A AAAA A AAAA AAA AAAA AAAA A AAA A AAAA AAA A AA AAAA AA AA AAA A AAAA AAA AAAAAAA AAA AAAAAAAA AAAAAAAA A AAAA AAA A AAA AAAA AAA t AAAAAAAAAAAAAAAAA AAA AA AAA AA AAA AA AAA A AA AAA in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 ms Figure 2a: Switching a lamp, L IL(OL) t *) if the time constant of load is too large, open-load-status may occur Figure 3a: Turn on into short circuit, IN IN ST ST V V OUT OUT td(SC) I I L L t t td(SC) approx. 200ms if Vbb - VOUT > 8.3 V typ. Semiconductor Group Page 10 8.Jan.96 BTS 542 E2 Figure 3b: Turn on into overload, Figure 4a: Overtemperature: Reset if Tj <Tjt IN IN IL I ST L(SCp) I L(SCr) V OUT T ST J t t Heating up may require several milliseconds, Vbb - VOUT < 8.3 V typ. Figure 5a: Open load: detection in ON-state, turn on/off to open load Figure 3c: Short circuit while on: IN IN ST ST V OUT V IL t d(ST) OUT I L **) t open t **) current peak approx. 20 ms Semiconductor Group Page 11 8.Jan.96 BTS 542 E2 Figure 5b: Open load: detection in ON-state, open load occurs in on-state Figure 6b: Undervoltage restart of charge pump VON [V] VON(CL) V on IN off t d(ST OL1) t ST d(ST OL2) V V off OUT V Vbb(u rst) normal I open V normal L V bb(over) bb(o rst) bb(u cp) bb(under) on V bb t Vbb [V] td(ST OL1) = tbd ms typ., td(ST OL2) = tbd ms typ charge pump starts at Vbb(ucp) =6.5 V typ. Figure 7a: Overvoltage: Figure 6a: Undervoltage: IN IN V bb Vbb V bb(under) V ON(CL) Vbb(over) V bb(o rst) Vbb(u cp) Vbb(u rst) V OUT V OUT ST ST open drain t Semiconductor Group Page 12 t 8.Jan.96 BTS 542 E2 Package and Ordering Code All dimensions in mm Standard TO-218AB/5 BTS 542 E2 Semiconductor Group Ordering code Q67060-S6951-A2 Page 13 8.Jan.96