INFINEON BTS542E2

PROFET® BTS 542 E2
Smart Highside Power Switch
Features
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
· Overload protection
· Current limitation
· Short-circuit protection
· Thermal shutdown
· Overvoltage protection (including load dump)
· Fast demagnetization of inductive loads
· Reverse battery protection1)
· Undervoltage and overvoltage shutdown with
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
63
V
4.5 ... 42 V
18 mW
21
A
70
A
auto-restart and hysteresis
· Open drain diagnostic output
· Open load detection in ON-state
· CMOS compatible input
· Loss of ground and loss of Vbb protection2)
· Electrostatic discharge (ESD) protection
TO-218AB/5
5
Application
· mC compatible power switch with diagnostic
Standard
feedback for 12 V and 24 V DC grounded loads
· All types of resistive, inductive and capacitve loads
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection
functions.
R
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
V
2
bb
+ V
bb
3
Logic
Voltage
Charge pump
sensor
Level shifter
Limit for
unclamped
ind. loads
Rectifier
IN
OUT
5
Temperature
sensor
Open load
ESD
4
Logic
Load
detection
ST
Short circuit
detection
GND

PROFET
1
Signal GND
1)
2)
Load GND
No external components required, reverse load current limited by connected load.
Additional external diode required for charged inductive loads
Semiconductor Group
Page 1 of 13
8.Jan.96
BTS 542 E2
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 W, RL= 1.1 W, td= 200 ms, IN= low or high
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation,
single pulse
Tj=150 °C:
Electrostatic discharge capability (ESD)
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
Symbol
Vbb
VLoad dump3)
Values
IL
Tj
Tstg
Ptot
self-limited
-40 ...+150
-55 ...+150
167
A
°C
2.1
2.0
J
kV
-0.5 ... +6
±5.0
±5.0
V
mA
EAS
VESD
VIN
IIN
IST
63
80
Unit
V
V
W
see internal circuit diagrams page 6...
Thermal resistance
3)
chip - case:
junction - ambient (free air):
RthJC
RthJA
£ 0.75 K/W
£ 45
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Semiconductor Group
Page 2
8.Jan.96
BTS 542 E2
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 5 A
18
35
--
mW
17
15
28
21
--
--
1
mA
100
10
---
350
130
ms
0.2
--
2
V/ms
0.4
--
5
V/ms
4.5
2.4
---
---6.5
42
4.5
4.5
7.5
V
V
V
V
DVbb(under)
--
0.2
--
V
Vbb(over)
Vbb(o rst)
DVbb(over)
Vbb(AZ)
--0.2
-67
12
18
6
52
----
V
V
V
V
25
60
--
mA
IL(off)
42
42
-60
63
----
IGND
--
1.1
--
mA
Tj=25 °C: RON
Tj=150 °C:
Nominal load current (pin 3 to 5)
IL(ISO)
ISO Proposal: VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
IL(GNDhigh)
GND pulled up, VIN= 0, see diagram page 7,
Tj =-40...+150°C
Turn-on time
to 90% VOUT: ton
Turn-off time
to 10% VOUT: toff
RL = 12 W, Tj =-40...+150°C
Slew rate on
dV /dton
10 to 30% VOUT, RL = 12 W, Tj =-40...+150°C
Slew rate off
-dV/dtoff
70 to 40% VOUT, RL = 12 W, Tj =-40...+150°C
Operating Parameters
Operating voltage 4)
Tj =-40...+150°C:
Undervoltage shutdown
Tj =-40...+150°C:
Undervoltage restart
Tj =-40...+150°C:
Undervoltage restart of charge pump
see diagram page 12
Tj =-40...+150°C:
Undervoltage hysteresis
DVbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Tj =-40...+150°C:
Overvoltage protection5)
Tj =-40°C:
Ibb=40 mA
Tj =25...+150°C:
Standby current (pin 3)
Tj=-40...+25°C:
VIN=0
Tj=150°C:
Leakage output current (included in Ibb(off))
VIN=0
Operating current (Pin 1)6), VIN=5 V
4)
5)
6)
Vbb(on)
Vbb(under)
Vbb(u rst)
Vbb(ucp)
Ibb(off)
--
A
mA
At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT »Vbb - 2 V
see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load.
Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group
Page 3
8.Jan.96
BTS 542 E2
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)7),
IL(SCp)
( max 400 ms if VON > VON(SC) )
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 10)
Short circuit shutdown delay after input pos. slope
VON > VON(SC),
Tj =-40..+150°C: td(SC)
Integrated resistor in Vbb line
Diagnostic Characteristics
Open load detection current
(on-condition)
7)
8)
9)
Unit
--45
-95
--
140
---
A
30
70
--
A
80
--
400
ms
VON(CL)
--
58
--
V
VON(SC)
Tjt
DTjt
EAS
ELoad12
ELoad24
-150
---
8.3
-10
--
---2.1
1.7
1.2
V
°C
K
J
---
-120
32
--
V
2
2
---
1900
1500
min value valid only, if input "low" time exceeds 30 ms
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL), IL= 30 mA
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation8),
Tj Start = 150 °C, single pulse
Vbb = 12 V:
Vbb = 24 V:
Reverse battery (pin 3 to 1) 9)
Values
min
typ
max
-Vbb
Rbb
Tj=-40 °C: IL (OL)
Tj=25..150°C:
W
mA
Short circuit current limit for max. duration of td(SC) max=400 ms, prior to shutdown
While demagnetizing load inductance, dissipated energy in PROFET is EAS= ò VON(CL) * iL(t) dt, approx.
VON(CL)
2
EAS= 1/2 * L * IL * (
), see diagram page 8
VON(CL) - Vbb
Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current IGND of » 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional
external GND-resistor (150 W). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
Semiconductor Group
Page 4
8.Jan.96
BTS 542 E2
Parameter and Conditions
Symbol
Values
min
typ
max
VIN(T+)
1.5
--
2.4
V
VIN(T-)
1.0
--
--
V
0.5
--
-30
V
mA
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Input and Status Feedback10)
Input turn-on threshold voltage
Unit
Tj =-40..+150°C:
Input turn-off threshold voltage
Tj =-40..+150°C:
Input threshold hysteresis
Off state input current (pin 2), VIN = 0.4 V
D VIN(T)
IIN(off)
-1
On state input current (pin 2), VIN = 3.5 V
IIN(on)
10
25
50
mA
Status invalid after positive input slope
(short circuit)
Tj=-40 ... +150°C:
Status invalid after positive input slope
(open load)
Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA:
ST low voltage Tj =-40...+150°C, IST = +1.6 mA:
td(ST SC)
80
200
400
ms
td(ST)
350
--
1600
ms
VST(high)
VST(low)
5.4
--
6.1
--
-0.4
V
10)
If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
Page 5
8.Jan.96
BTS 542 E2
Truth Table
Input-
Output
level
level
542
D2
542
E2
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
H
H
H
L
H
L
H
H (L12))
L
L
L13)
L13)
L
L
H
H
H
L
H
L
H
H (L12))
L
L
H
H
H
H
Normal
operation
Open load
Short circuit
to GND
Short circuit
to Vbb
Overtemperature
Undervoltage
Overvoltage
Status
11)
H
L
L
H
H
L
L
L
L
L
L
L = "Low" Level
H = "High" Level
Terms
Status output
3
I IN
PROFET
I ST
V
bb
V IN
VST
Vbb
IN
2
+5V
Ibb
4
ST
OUT
IL
R ST(ON)
VON
5
GND
1
R GND
GND
IGND
VOUT
ST
ESDZD
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 250 W at 1.6 mA, ESD zener diodes are
not to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the
zener voltage (increase of up to 1 V).
Input circuit (ESD protection)
R
IN
I
ESDZDI1
ZDI2
I
I
GND
ZDI1 6.1 V typ., ESD zener diodes are not to be used
as voltage clamp at DC conditions. Operation in this
mode may result in a drift of the zener voltage
(increase of up to 1 V).
11)
Power Transistor off, high impedance
Low resistance short Vbb to output may be detected by no-load-detection
13) No current sink capability during undervoltage shutdown
12)
Semiconductor Group
Page 6
8.Jan.96
BTS 542 E2
Short Circuit detection
Open-load detection
Fault Condition: VON > 8.3 V typ.; IN high
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
+ V
bb
+V
bb
V
ON
Logic
unit
VON
ON
OUT
Short circuit
detection
OUT
Logic
unit
Open load
detection
Inductive and overvoltage output clamp
+ V
V
bb
GND disconnect
Z
V
ON
3
OUT
2
GND
IN
PROFET
VON clamped to 58 V typ.
4
Overvolt. and reverse batt. protection
V
bb
+V
R IN
V
Z
ST
V V
IN ST
OUT
5
GND
1
VGND
bb
R bb
Any kind of load. In case of Input=high is VOUT » VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
IN
GND disconnect with GND pull up
Logic
V
R ST
Vbb
ST
OUT
3
GND
PROFET
2
R GND
IN
Vbb
PROFET
Signal GND
4
Rbb = 120 W typ., VZ +Rbb*40 mA = 67 V typ., add
RGND, RIN, RST for extended protection
ST
OUT
5
GND
1
V
bb
V V
IN ST
V
GND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Semiconductor Group
Page 7
8.Jan.96
BTS 542 E2
Vbb disconnect with charged inductive
load
Inductive Load switch-off energy
dissipation
E bb
EAS
3
high
2
Vbb
IN
PROFET
4
ST
OUT
IN
5
PROFET
=
GND
1
ST
ELoad
Vbb
GND
OUT
EL
ER
V
bb
Energy dissipated in PROFET EAS = Ebb + EL - ER.
3
high IN
2
PROFET
4
ST
2
ELoad < EL, EL = 1/2 * L * I L
Vbb
OUT
5
GND
1
V
bb
Semiconductor Group
Page 8
8.Jan.96
BTS 542 E2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type
Logic version
BTS 542D2 542E2
Overtemperature protection
Tj >150 °C, latch function14)15)
Tj >150 °C, with auto-restart on cooling
Short-circuit to GND protection
switches off when VON>8.3 V typ.14)
(when first turned on after approx. 200 ms)
D
E
X
X
X
X
X
X
Undervoltage shutdown with auto restart
X
X
Overvoltage shutdown with auto restart
X
X
X
X
Open load detection
in OFF-state with sensing current 30 mA typ.
in ON-state with sensing voltage drop across
power transistor
Status feedback for
overtemperature
X
X
-16)
-16)
open load
X
X
undervoltage
X
-
overvoltage
X
-
short circuit to GND
short to Vbb
Status output type
CMOS
X
X
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL)
X
X
X
X
Load current limit
high level (can handle loads with high inrush currents)
medium level
low level (better protection of application)
14)
Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT
¹ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
15) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
16) Low resistance short V to output may be detected by no-load-detection
bb
Semiconductor Group
Page 9
8.Jan.96
BTS 542 E2
Timing diagrams
Figure 2b: Switching an inductive load
Figure 1a: Vbb turn on:
IN
IN
V
bb
t d(bb IN)
td(ST)
ST
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AA
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V
V
OUT
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AA
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AAA
AA
AA
AAA
AA
AA
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AA
AA
AAA
AA
AA
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AA
AA
A
AAA
AAAAAA
AA
AAA
AA AAA
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AA
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AAAAAA
AA
AAA
AA AAA
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AA
OUT
ST open drain
I
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A
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A
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A
AAA
A
AAAA
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A AA
AAAA
AA
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in case of too early VIN=high the device may not turn on (curve A)
td(bb IN) approx. 150 ms
Figure 2a: Switching a lamp,
L
IL(OL)
t
*) if the time constant of load is too large, open-load-status may occur
Figure 3a: Turn on into short circuit,
IN
IN
ST
ST
V
V
OUT
OUT
td(SC)
I
I
L
L
t
t
td(SC) approx. 200ms if Vbb - VOUT > 8.3 V typ.
Semiconductor Group
Page 10
8.Jan.96
BTS 542 E2
Figure 3b: Turn on into overload,
Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
IN
IL
I
ST
L(SCp)
I
L(SCr)
V
OUT
T
ST
J
t
t
Heating up may require several milliseconds,
Vbb - VOUT < 8.3 V typ.
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
Figure 3c: Short circuit while on:
IN
IN
ST
ST
V OUT
V
IL
t
d(ST)
OUT
I
L
**)
t
open
t
**) current peak approx. 20 ms
Semiconductor Group
Page 11
8.Jan.96
BTS 542 E2
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
Figure 6b: Undervoltage restart of charge pump
VON [V]
VON(CL)
V on
IN
off
t
d(ST OL1)
t
ST
d(ST OL2)
V
V
off
OUT
V
Vbb(u rst)
normal
I
open
V
normal
L
V
bb(over)
bb(o rst)
bb(u cp)
bb(under)
on
V bb
t
Vbb [V]
td(ST OL1) = tbd ms typ., td(ST OL2) = tbd ms typ
charge pump starts at Vbb(ucp) =6.5 V typ.
Figure 7a: Overvoltage:
Figure 6a: Undervoltage:
IN
IN
V bb
Vbb
V
bb(under)
V ON(CL)
Vbb(over)
V bb(o rst)
Vbb(u cp)
Vbb(u rst)
V
OUT
V OUT
ST
ST open drain
t
Semiconductor Group
Page 12
t
8.Jan.96
BTS 542 E2
Package and Ordering Code
All dimensions in mm
Standard TO-218AB/5
BTS 542 E2
Semiconductor Group
Ordering code
Q67060-S6951-A2
Page 13
8.Jan.96