PROFET® BTS 308
Smart Highside Power Switch
Features
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
60
V
4.7 ... 34 V
300 mΩ
1.3
A
TO-220AB/5
5
5
Standard
1
Straight leads
1
5
SMD
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
• Fast switching
• Not suitable for lamp loads
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V bb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
3
V Logic
2
Voltage
Charge pump
sensor
Level shifter
Rectifier
IN
OUT
5
Temperature
sensor
Open load
ESD
4
Limit for
unclamped
ind. loads
Logic
Load
detection
ST
Short circuit
detection
GND
PROFET
1
Signal GND
)
1
Load GND
With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
Page 1 of 14
2003-Oct-01
BTS 308
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Electrostatic discharge capability (ESD)
IN, ST:
(Human Body Model)
all other pins:
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
Symbol
Vbb
IL
Tj
Tstg
Ptot
VESD
VIN
IIN
IST
Values
60
self-limited
-40 ...+150
-55 ...+150
50
1
tbd (>1)
-10 ... +16
±5.0
±5.0
Unit
V
A
°C
≤ 2.5
≤ 75
K/W
W
kV
V
mA
see internal circuit diagrams page 6
Thermal resistance
Semiconductor Group
chip - case:
junction - ambient (free air):
Page 2
RthJC
RthJA
2003-Oct-01
BTS 308
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 24 V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 0.8 A, Vbb = 12V
Tj=25 °C:
RON
Tj=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 7
Turn-on time to 90% VOUT:
Turn-off time to 10% VOUT:
RL = 47 Ω, Vbb = 12V, Tj =-40...+150°C
Slew rate on, 10 to 30% VOUT,
RL = 47 Ω, Vbb = 12V, Tj =-40...+150°C
Slew rate off, 10 to 30% VOUT,
RL = 47 Ω, Vbb = 12V, Tj =-40...+150°C
Operating Parameters
Operating voltage2)
Operating voltage slew rate
Undervoltage shutdown
3)
)
4
--
270
300
600
1.18
540
1.3
IL(ISO)
IL(GNDhigh)
--
ton
toff
Unit
mΩ
--
-1
A
mA
---
---
50
55
µs
dV /dton
1
--
10
V/µs
-dV/dtoff
2
--
15
V/µs
4.7
-1
2.9
2.7
---
----4.9
34
+1
4.5
4.7
4.9
7.5
V
V/µs
V
--
0.2
--
V
34
34
-59
--0.5
70
46
----
V
V
V
V
Tj =-40...+150°C: Vbb(on)
dVbb/dt
Tj =25°C: Vbb(under)
Tj =-40...+150°C:
Undervoltage restart
Tj =-40...+150°C: Vbb(u rst)
Undervoltage restart of charge pump
Vbb(ucp)
see diagram page 11
Tj =-40...+150°C:
Undervoltage hysteresis
∆Vbb(under)
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C: Vbb(over)
Overvoltage restart
Tj =-40...+150°C: Vbb(o rst)
Overvoltage hysteresis
Tj =-40...+150°C: ∆Vbb(over)
3)
Overvoltage protection
Tj =-40...+150°C: Vbb(AZ)
Ibb=10 mA
Standby current (pin 3),
Ibb(off)
VIN=0
Tj=-40...+150°C:
4)
Operating current (Pin 1) , VIN=5 V
IGND
2)
Values
min
typ
max
V
V
µA
---
40
2
50
4
mA
At supply voltage increase up to Vbb= 4.9 V typ without charge pump, VOUT ≈Vbb - 2 V
Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7.
Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group
Page 3
2003-Oct-01
BTS 308
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 24 V unless otherwise specified
Protection Functions5)
Initial peak short circuit current limit (pin 3 to 5)6),
IL(SCp)
( max 100 µs if VON > VON(SC) )
Vbb = 12V
Tj =-40°C:
Tj =25°C:
=+150°C:
Tj
Short circuit shutdown delay after input pos. slope
VON > VON(SC),
Tj =-40..+150°C: td(SC)
Values
min
typ
max
--2.5
-5
--
10
---
A
15
--
100
µs
VON(CL)
59
67
75
V
VON(SC)
Tjt
∆Tjt
-Vbb
-150
---
3.5
-10
--
---32
V
°C
K
V
0
--
30
µA
2
3
4
V
min value valid only, if input "low" time exceeds 60 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL)
IL= 1 A, Tj =-40..+150°C:
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 7)
Diagnostic Characteristics
Open load detection current
(included in standby current Ibb(off))
Open load detection voltage
)
5
)
)
6
7
Unit
Tj=-40...+150°C: IL(off)
Tj=-40..150°C: VOUT(OL)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
Short circuit current limit for max. duration of td(SC) max=100 µs, prior to shutdown
Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is
normally limited by the connected load. Input and Status currents have to be limited (see max. ratings page
2 and circuit page 7).
Semiconductor Group
Page 4
2003-Oct-01
BTS 308
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 24 V unless otherwise specified
Input and Status Feedback8)
Input resistance
RI
see circuit page 6
Input turn-on threshold voltage
Tj =-40..+150 VIN(T+)
Input turn-off threshold voltage
Tj =-40..+150° VIN(T-)
Input threshold hysteresis, Tj =-40..+150°C
∆ VIN(T)
Off state input current (pin 2), VIN = 0.4 V,
IIN(off)
Tj =-40..+150°C
Values
min
typ
max
Unit
--
4
--
kΩ
1.5
0.8
0.2
8
-----
2.4
--30
V
V
V
µA
On state input current (pin 2), VIN = 3.5 V,
Tj =-40..+150°C
IIN(on)
10
22
50
µA
Delay time for status with open load
td(ST OL3)
50
--
400
µs
Status invalid after positive input slope
td(ST SC)
(short circuit)
Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +50 uA: VST(high)
ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(low)
15
50
100
µs
5.4
--
6
--
-0.4
V
after Input neg. slope (see diagram page 11)
8)
If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
Page 5
2003-Oct-01
BTS 308
Truth Table
Input-
Output
level
level
BTS 308
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
H
H
L
H
H
L
L
H
L
L
H
H
H
H
Normal
operation
Open load
Short circuit
to GND
Short circuit
to Vbb
Overtemperature
Undervoltage
Overvoltage
L = "Low" Level
H = "High" Level
Status
9
)
H
L
L
H
H
L
L
L
L
L
L
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 11)
Terms
Status output
+5V
Ibb
3
I IN
2
Vbb
IN
IL
I ST
V
V
IN
V ST
OUT
PROFET
4
R ST(ON)
VON
5
ST
GND
1
bb
R
IGND
R
GND
V OUT
GND
ESDZD
ESD-Zener diode: 6 V typ., max 5 mA;
RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Input circuit (ESD protection)
IN
ST
Short circuit detection
I
Fault Condition: VON > 3.5 V typ.; IN high
ESD-ZD I
I
I
+ V bb
GND
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
)
9
V
ON
OUT
Logic
unit
Short circuit
detection
Power Transistor off, high impedance, internal pull up current source for open load detection.
Semiconductor Group
Page 6
2003-Oct-01
BTS 308
GND disconnect
Inductive and overvoltage output clamp
+ V bb
V
3
Z
IN
2
VON
OUT
PROFET
PROFET
V
VON clamped to 67 V typ.
bb
V
IN
V
5
ST
4
OUT
GND
Vbb
GND
1
ST
V
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
Overvolt. and reverse batt. protection
GND disconnect with GND pull up
+ V bb
3
V
R IN
IN
RI
Z2
2
IN
Logic
R ST
PROFET
ST
4
V
Vbb
5
ST
GND
PROFET
Z1
OUT
1
GND
V
R GND
V
bb
V
IN ST
V
GND
Signal GND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND = 150 Ω,
RST= 15 kΩ, RI= 4 kΩ typ.
Vbb disconnect with charged inductive
load
Open-load detection
3
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
high
2
IN
Vbb
PROFET
4
OFF
5
ST
GND
1
I
L(OL)
V
Logic
unit
OUT
Open load
detection
V
OUT
bb
Normal load current can be handled by the PROFET
itself.
Signal GND
Semiconductor Group
Page 7
2003-Oct-01
BTS 308
Inductive Load switch-off energy
dissipation
Vbb disconnect with charged external
inductive load
high
2
S
3
IN
Vbb
E AS
IN
PROFET
4
E bb
OUT
5
D
ST
PROFET
=
GND
OUT
ST
GND
1
V
ELoad
Vbb
ZL
{
bb
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
L
RL
EL
ER
Energy stored in load inductance:
2
EL = 1/2·L·I L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS=
Semiconductor Group
Page 8
IL· L
IL·RL
·(V + |VOUT(CL)|)· ln (1+
)
|VOUT(CL)|
2·RL bb
2003-Oct-01
BTS 308
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and reverse
battery protection with 150 Ω in GND connection, protection against loss of ground
Type
Logic version
BTS 410D2 410E2 410G2 410H2
D
Overtemperature protection with hysteresis
Tj >150 °C, latch function10)11)
Tj >150 °C, with auto-restart on cooling
Short circuit to GND protection
E
G
X
X
X
307
H
X
switches off when VON>3.5 V typ. and
Vbb> 8 V typ10)
308
X
X
X
switches off when VON>3.5 V typ.
X
typ.10)
switches off when VON>8.5 V
(when first turned on after approx. 0 µs)
X
X
X
Achieved through overtemperature protection
X
Open load detection
in OFF-state with sensing current -- µA typ.
in ON-state with sensing voltage drop across
power transistor
X
X
X
X
X
X
X
X
X
X
-
X
X
X
X
X
X
X
X
X
-
X
X
X
-13)
13)
-13)
X
X
X
X
X
X
Undervoltage shutdown with auto restart
X
X
Overvoltage shutdown with auto restart )
X
overtemperature
short circuit to GND
12
Status feedback for
short to Vbb
-
open load
X
X
X
X
X
X
undervoltage
X
-
-
-
X
-
overvoltage
X
-
-
-
-
-
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Status output type
CMOS
X
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL)
X
Load current limit
high level (can handle loads with high inrush currents)
low level (better protection of application)
Protection against loss of GND
X
X
) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V
OUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
11)
With latch function. Reseted by a) Input low, b) Undervoltage
12)
No auto restart after overvoltage in case of short circuit
13)
Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
10
Semiconductor Group
Page 9
2003-Oct-01
BTS 308
Timing diagrams
Figure 3a: Turn on into short circuit,
Figure 1a: Vbb turn on:
IN
IN
t
V
bb
ST
d(bb IN)
VOUT
td(SC)
V
OUT
A
I
L
ST open drain
t
t
A
td(SC) approx. 200µs if Vbb - VOUT > 3.5 V typ.
in case of too early VIN=high the device may not turn on (curve A)
td(bb IN) approx. 150 µs
Figure 3b: Turn on into overload,
Figure 2a: Switching an inductive load
IN
IN
IL
I L(SCp)
I L(SCr)
ST
V
OUT
ST
t
I
L
t
Semiconductor Group
Heating up may require several seconds,
Vbb - VOUT < 3.5 V typ.
Page 10
2003-Oct-01
BTS 308
Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
Figure 3c: Short circuit while on:
IN
IN
ST
ST
t
V OUT
V OUT
I
IL
d(ST OL3)
open
L
**)
normal
*)
t
t
in case of external capacity td(ST,OL3) may be higher due to high
impedance
*) IL = -- µA typ
**) current peak approx. 20 µs
Figure 4a: Overtemperature,
Figure 6a: Undervoltage:
Reset if (IN=low) and (Tj<Tjt)
IN
IN
V bb
ST
V
bb(under)
Vbb(u cp)
V
bb(u rst)
V
OUT
V OUT
T
ST open drain
J
t
t
*) ST goes high , when VIN=low and Tj<Tjt
Semiconductor Group
Page 11
2003-Oct-01
BTS 308
Figure 8a: Overvoltage at short circuit shutdown:
Figure 6b: Undervoltage restart of charge pump
VON(CL)
V on
IN
V
bb(u rst)
V
V
V
bb(over)
off-state
on-state
off-state
Vbb
V bb(o rst)
Output short to GND
VOUT
short circuit shutdown
IL
bb(o rst)
bb(u cp)
V bb(under)
ST
V bb
charge pump starts at Vbb(ucp) =4.9 V typ.
t
Overvoltage due to power line inductance. No overvoltage autorestart of PROFET after short circuit shutdown.
Figure 7a: Overvoltage:
IN
Vbb
V ON(CL)
Vbb(over)
V bb(o rst)
V
OUT
ST
t
Semiconductor Group
Page 12
2003-Oct-01
BTS 308
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
BTS 308
Ordering code
tbd
SMD TO-220AB/5, Opt. E3062 Ordering code
BTS 308 E3062A
T&R:
tbd
TO-220AB/5, Option E3043 Ordering code
BTS 308 E3043
Semiconductor Group
tbd
Page 13
2003-Oct-01
BTS 308
Changed since 08.96
Date
Change
Dec
"suitable for PWM" deleted at Application
List (Page 1) due to the fact, that where
96
may occure problems with current limit.
Initial short circuit current limit IL(SCp)
"VON=3V" deleted
Option overview, Short circuit to GND
protection, "Vbb> 8 V typ" deletet for
BTS308, only valid for BTS410H2
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Semiconductor Group
Page 14
2003-Oct-01