JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 SS8050LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ０．９５ ０．４ ０．９５ １．９ ２．９ ２．４ １．３ Unit : mm ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol unless Test otherwise conditions Collector-base breakdown voltage V(BR)CBO Ic= 100μA， Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=0 specified） MIN TYP MAX UNIT 40 V Ic= 0.1mA， IB=0 25 V IE=100μA， IC=0 5 V Collector cut-off current ICBO VCB=40 V , IE=0 0.1 μA Collector cut-off current ICEO VCB=20V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V , 0.1 μA hFE(1) VCE=1V, IC= 100m A 120 hFE(2) VCE=1V, IC= 800mA 40 IC=0 350 DC current gain Collector-emitter saturation voltage VCE(sat) IC=800 mA, IB= 80m A 0.5 V Base-emitter saturation voltage VBE(sat) IC=800 mA, IB= 80m A 1.2 V fT Transition frequency VCE=10V, f=30MHz IC= 50mA 100 MHz CLASSIFICATION OF hFE(1) Ｒａｎｋ Ｌ Ｈ Ｒａｎｇｅ １２０－２００ ２００－３５０ DEVICE MARKING: 8050LT1=Y1 SOT-23 PACKAGE OUTLINE DIMENSIONS D θ b L E E1 L1 0.2 e C Symbol A A1 A2 e1 Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 1.800 L 0.100 0.037TPY 0.950TPY 2.000 0.071 0.550REF 0.079 0.022REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8°