JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 KTC4075 TRANSISTOR（NPN ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.1 W（Tamb=25℃） Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter ０．９５ ０．４ ０．９５ １．９ ２．９ ２．４ １．３ Unit : mm unless Symbol Test Collector-base breakdown voltage V(BR)CBO IC = 100 μA， Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO otherwise specified） conditions MIN MAX UNIT 60 V IC = 1mA， IB=0 50 V IE= 100μA， IC=0 5 V IE=0 Collector cut-off current ICBO VCB=60 V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA DC current gain hFE Collector-emitter saturation voltage Transition frequency VCEsat VCE= 6V， IC=2mA IC=100mA, IB= 10mA VCE=10V, fT 70 700 0.25 IC= 1mA 80 V MHz Collector output capacitance Cob VCE=10V， IE=0，f=1MHz 3.5 dB Noise figure NF VCE=6 V，IE=0.1mA, f=1KHz，RG=10K? 10 dB CLASSIFICATION OF h FE Rank O Y GR BL Range 70~140 120~240 200~400 350~700 LO LY LGR LBL Marking SOT-23 PACKAGE OUTLINE DIMENSIONS D θ b L E E1 L1 0.2 e C Symbol A A1 A2 e1 Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 1.800 L 0.100 0.037TPY 0.950TPY 2.000 0.071 0.550REF 0.079 0.022REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8°