JIANGSU A1015LT1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
A1015LT1
SOT—23
)
TRANSISTOR( PNP
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Symbol
1.0
Power dissipation
PCM :
0.2
W(Tamb=25℃)
Collector current
ICM :
-0.15
A
Collector-base voltage
V(BR)CBO : -50
V
Operating and storage junction temperature range
T J ,T stg: -55℃ to +150
0.95
0.4
0.95
1.9
2.9
2.4
1.3
unless
Test
otherwise
conditions
Collector-base breakdown voltage
V(BR)CBO
Ic= -100μA,
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
IE=0
Unit : mm
specified)
MIN
TYP
MAX
UNIT
-50
V
Ic= -0.1mA, IB=0
-50
V
IE= -10μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50 V , IE=0
-0.1
μA
Collector cut-off current
ICEO
VCE= -50 V , IB=0
-0.1
μA Emitter cut-off current
IEBO
VEB=- 5V ,
-0.1
μA
DC current gain
HFE(1)
IC=0
VCE=-6V, IC= -2mA
130
400
Collector-emitter saturation voltage
VCE(sat)
IC=-100 mA, IB= -10m A
-0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=-100 mA, IB= -10m A
-1.1
V
Transition frequency
CLASSIFICATION OF HFE(1)
Rank Range MARKING fT
VCE=-10V,
IC= -1mA
f=30MHz
80
MHz
L H 130-200 200-400 BA SOT-23 PACKAGE OUTLINE DIMENSIONS
D
θ
b
L
E
E1
L1
0.2
e
C
Symbol
A
A1
A2
e1
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
0.900
1.100
0.035
0.043
A1
0.000
0.100
0.000
0.004
A2
0.900
1.000
0.035
0.039
b
0.300
0.500
0.012
0.020
c
0.080
0.150
0.003
0.006
D
2.800
3.000
0.110
0.118
E
1.200
1.400
0.047
0.055
E1
2.250
2.550
0.089
e
e1
1.800
L
0.100
0.037TPY
0.950TPY
2.000
0.071
0.550REF
0.079
0.022REF
L1
0.300
0.500
0.012
0.020
θ
0°
8°
0°
8°