JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors A1015LT1 SOT—23 ） TRANSISTOR（ PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol １．０ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150 ０．９５ ０．４ ０．９５ １．９ ２．９ ２．４ １．３ unless Test otherwise conditions Collector-base breakdown voltage V(BR)CBO Ic= -100μA， Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=0 Unit : mm specified） MIN TYP MAX UNIT -50 V Ic= -0.1mA， IB=0 -50 V IE= -10μA， IC=0 -5 V Collector cut-off current ICBO VCB=-50 V , IE=0 -0.1 μA Collector cut-off current ICEO VCE= -50 V , IB=0 -0.1 μA Emitter cut-off current IEBO VEB=- 5V , -0.1 μA DC current gain HFE(1) IC=0 VCE=-6V, IC= -2mA 130 400 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10m A -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -10m A -1.1 V Transition frequency CLASSIFICATION OF HFE(1) Ｒａｎｋ Ｒａｎｇｅ MARKING fT VCE=-10V, IC= -1mA f=30MHz 80 MHz Ｌ Ｈ １３０－２００ ２００－４００ BA SOT-23 PACKAGE OUTLINE DIMENSIONS D θ b L E E1 L1 0.2 e C Symbol A A1 A2 e1 Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 1.800 L 0.100 0.037TPY 0.950TPY 2.000 0.071 0.550REF 0.079 0.022REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8°