76 CY7C276 16K x 16 Reprogrammable PROM Features Functional Description • 0.8-micron CMOS for optimum speed/power • High speed (for commercial and military) — 25-ns access time • 16-bit-wide words • Three programmable chip selects • Programmable output enable • 44-pin PLCC and 44-pin LCC packages • 100% reprogrammable in windowed packages • TTL-compatible I/O • Capable of withstanding greater than 2001V static discharge The CY7C276 is a high-performance 16K-word by 16-bit CMOS PROM. It is available in a 44-pin PLCC/CLCC and a 44-pin LCC packages, and is 100% reprogrammable in windowed packages. The memory cells utilize proven EPROM floating gate technology and word-wide programming algorithms. The CY7C276 allows the user to independently program the polarity of each chip select (CS2−CS0). This provides on-chip decoding of up to eight banks of PROM. The polarity of the asynchronous output enable pin (OE) is also programmable. In order to read the CY7C276, all three chip selects must be active and OE must be asserted. The contents of the memory location addressed by the address lines (A13−A0) will become available on the output lines (D15−D0). The data will remain on the outputs until the address changes or the outputs are disabled. Logic Block Diagram LCC/PLCC/CLCC Top View D15 D13 A8 A7 A6 A5 A4 A3 A2 D12 D12 D11 D10 D9 D8 VSS VCC D7 D6 D5 D4 D11 D10 D9 D8 A1 A0 D7 6 5 4 3 2 1 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 18 19 20 21 22 23 24 25 26 27 28 A13 A12 A11 A10 A9 VSS VSS A8 A7 A6 A5 D 3 D 2 D 1 D 0 OE V SS A 0 A 1 A 2 A 3 A 4 D6 7 8 9 10 11 12 13 14 15 16 17 CS 2 CS 1 CS 0 D14 16K x 16 PROGRAMMABLE ARRAY D13 D14 D15 VSS VCC VSS VCC VSS A13 A12 A11 A10 A9 Pin Configuration D5 D4 D3 CS0 CS1 CS2 D2 CS DECODE D1 D0 OE Cypress Semiconductor Corporation Document #: 38-04004 Rev. ** • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 Revised March 4, 2002 CY7C276 Selection Guide CY7C276-25 CY7C276-30 CY7C276-35 25 30 35 Commercial 175 175 175 Military 200 200 200 Maximum Access Time (ns) Maximum Operating Current (mA) Maximum Ratings Static Discharge Voltage ........................................... >2001V (per MIL-STD-883, Method 3015) (Above which the useful life may be impaired. For user guidelines, not tested.) Latch-Up Current..................................................... >200 mA Storage Temperature ................................. –65°C to+150°C Operating Range Ambient Temperature with Power Applied............................................. –55°C to+125°C Supply Voltage to Ground Potential ................ –0.5V to+7.0V DC Voltage Applied to Outputs in High Z State ................................................ –0.5V to+7.0V DC Input Voltage............................................ –3.0V to +7.0V Range Ambient Temperature VCC Commercial 0°C to +70°C 5V ±10% Industrial[1] –40°C to +85°C 5V ±10% –55°C to +125°C 5V ±10% [2] Military DC Program Voltage .....................................................13.0V UV Erasure ...................................................7258 Wsec/cm2 Electrical Characteristics[3, 4] CY7C276-25 CY7C276-30 CY7C276-35 Parameter Description Test Conditions Min. Max. 2.4 Unit VOH Output HIGH Voltage VCC = Min., IOH = –2.0 mA V VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA (6.0 mA Mil) VIH Input HIGH Level Guaranteed Input Logical HIGH Voltage for All Inputs VIL Input LOW Level IIX Input Leakage Current VCD Input Clamp Diode Voltage IOZ Output Leakage Current VCC = Max., VOL < VOUT < VOH, Output Disabled –40 +40 µA IOS Output Short Circuit Current VCC = Max., VOUT = 0.0V[5] –20 –90 mA ICC Power Supply Current VCC = Max., IOUT = 0.0 mA Com’l 175 mA Military 200 mA 0.4 V 2.0 VCC V Guaranteed Input Logical LOW Voltage for All Inputs –3.0 0.8 V GND < VIN < VCC –10 +10 µA µA Note 3 Capacitance[3] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 5.0V Max. Unit 10 pF 10 pF Note: 1. Contact a Cypress representative for industrial temperature range specifications. 2. TA is the “instant on” case temperature 3. See Introduction to CMOS PROMs in this Data Book for general information on testing. 4. See the last page of this specification for Group A subgroup testing information. 5. For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds. Document #: 38-04004 Rev. ** Page 2 of 10 CY7C276 AC Test Loads and Waveforms R1 500Ω (658Ω MIL) 5V R1 500Ω (658Ω MIL) 5V OUTPUT OUTPUT 50 pF INCLUDING JIG AND SCOPE R2 333Ω (403Ω MIL) (a) NormalLoad 90% R2 333Ω (403Ω MIL) 5 pF INCLUDING JIG AND SCOPE ALL INPUT PULSES 3.0V 90% 10% GND 10% < 3 ns < 3 ns (b) High Z Load Equivalent to: THÉVENIN EQUIVALENT OUTPUT 200Ω (250ΩMIL) 2.0V (1.9V Mil) Switching Characteristics Over the Operating Range[3,4] CY7C276-25 Parameter Description Min. Max. CY7C276-30 Min. Max. CY7C276-35 Min. Max. Unit tAA Address to Output Data Valid 25 30 35 ns tCSOV CS Active to Output Valid 13 15 18 ns tCSOZ CS Inactive to High Z Output 13 15 18 ns tOEV OE Active to Output Valid 11 12 15 ns tOEZ OE Inactive to High Z Output 11 12 15 ns Erasure Characteristics The recommended dose of ultraviolet light for erasure is a wavelength of 2537 Angstroms for a minimum dose (UV intensity multiplied by exposure time) of 25 Wsec/cm2. For an ultraviolet lamp with a 12 mW/cm2 power rating the exposure time would be approximately 35 minutes. The 7C276 needs to be within 1 inch of the lamp during erasure. Permanent damage Document #: 38-04004 Rev. ** may result if the EPROM is exposed to high-intensity UV light for an extended period of time. 7258 Wsec/cm2 is the recommended maximum dosage. Wavelengths of light less than 4000 Angstroms begin to erase the 7C276 in the windowed package. For this reason, an opaque label should be placed over the window if the EPROM is exposed to sunlight or fluorescent lighting for extended periods of time. Page 3 of 10 CY7C276 Switching Waveforms Read Operation Timing Diagram [6] ADDR A A13 − A0 ADDR B tAA tAA D15 − D0 DATA A DATA B C276–6 Chip Select and Output Enable Timing Diagrams A13 − A0 CS2 − CS0 INACTIVE ACTIVE INACTIVE OE ACTIVE HIGH tCSOV D15 − D0 tOEZ tOEV VALID tCSOZ VALID HIGH Z C276–7 Note: 6. CS2 – CS0, OE assumed active. Architecture Configuration Bits Programming Information The CY7C276 has four user-programmable options in addition to the reprogrammable data array. For detailed programming information contact your local Cypress representative. Programming support is available from Cypress as well as from a number of third-party software vendors. For detailed programming information, including a listing of software packages, please see the PROM Programming Information located at the end of this section. Programming algorithms can be obtained from any Cypress representative. The programmable options determine the active polarity for the three chip selects (CS2 - CS0) and OE. When these control bits are programmed with a 0 the inputs are active LOW. When these control bits are programmed with a 1 the inputs are active HIGH. Document #: 38-04004 Rev. ** Page 4 of 10 CY7C276 Table 1. Control Word for Architecture Configuration Control Word Control Option Bit Programmed Level Function OE D0 0=Default 1=Programmed OE Active LOW OE Active HIGH CS0 D12 0=Default 1=Programmed CS0 Active LOW CS0 Active HIGH CS1 D13 0=Default 1=Programmed CS1 Active LOW CS1 Active HIGH CS2 D14 0=Default 1=Programmed CS2 Active LOW CS2 Active HIGH Control Word (4000H) D15 D0 X CS2 CS1 CS0 X X X X X X X X 1 X X OE Bit Map Programmer Address (Hex) 0000 RAM Data Table 2. Program Mode Table Data . . . VPP PGM VFY D0 − D15 Program Inhibit VPP VIHP VIHP High Z Program Enable VPP VILP VIHP Data Program Verify VPP VIHP VILP Data Mode . . . 3FFF Data 4000 Control Word Table 3. Configuration Mode Table PGM VFY A2 D0 − D15 Program Inhibit VPP VIHP VIHP VPP High Z Program Control Word VPP VILP VIHP VPP Control Word Verify Control Word VPP VIHP VILP VPP Control Word D13 D14 D15 VSS VPP VSS VCC VSS 7 8 9 10 11 12 13 14 15 16 17 6 5 4 3 2 1 44 43 42 41 40 39 38 37 CY7C276 36 35 34 33 32 31 30 29 18 19 20 21 22 23 24 25 26 27 28 A13 A12 A11 A10 A9 VSS VSS A8 A7 A6 A5 D 3 D 2 D 1 D 0 OE V SS A 0 A 1 A 2 A 3 A 4 D12 D11 D10 D9 D8 VSS VCC D7 D6 D5 D4 PGM VFY CS 0 VPP Mode Figure 1. Programming Pinout Document #: 38-04004 Rev. ** Page 5 of 10 CY7C276 Typical DC and AC Characteristics NORMALIZED I CC vs. tCKA CYCLE NORMALIZED ICC (mA) 1.1 TA =25°C VCC=5.5V 1.0 0.9 0.8 0.7 NORMALIZED ACCESS TIME 1.4 1.2 NORMALIZED I CC (mA) NORMALIZED t CKA vs. TEMPERATURE NORMALIZED ICC vs. OUTPUT VOLTAGE TA =25°C f=f MAX 1.2 1.0 0.8 0.6 0.6 0 100 200 300 400 500 ACCESS TIME (ns) 1.1 1.0 0.9 TA =90°C 5.0 0.8 5.5 6.0 NORMALIZED I CC vs. AMBIENT TEMPERATURE TA =25°C VCC=4.5V 20 15 10 5 0 125 25 1.1 0 200 SUPPLYVOLTAGE(V) 400 VCC=5.6V 1.05 1.0 0.95 0.90 0.85 −55 800 1000 600 25 125 AMBIENT TEMPERATURE (°C) OUTPUT LOAD (pF) NORMALIZED t OEV vs. TEMPERATURE tOEV CHANGE vs. OUTPUT LOADING 1.2 35 30 DELTA t OEV (ns) NORMALIZED tOEV (ns) 1.0 AMBIENT TEMPERATURE (°C) 25 DELTA ACCESS TIME (ns) NORMALIZED ACCESS TIME 1.2 4.5 1.2 tCKA CHANGE vs. OUTPUT LOADING NORMALIZED t CKA vs. SUPPLY VOLTAGE 0.9 4.0 VCC=4.5V 0.6 −55 6 4.5 5 5.5 OUTPUT VOLTAGE (V) 4 NORMALIZED I CC (mA) 0.5 1.4 1.1 1.0 VCC =4.5V 0.9 25 20 15 10 VCC =4.5V TA =25°C 5 0 −55 0 25 TEMPERATURE(°C) Document #: 38-04004 Rev. ** 125 0 200 400 600 800 1000 OUTPUT LOAD (pF) C276–9 Page 6 of 10 CY7C276 Ordering Information[7] Speed (ns) 25 30 35 Ordering Code Package Name Package Type CY7C276-25HC H67 44-Pin Windowed Leaded Chip Carrier CY7C276-25JC J67 44-Lead Plastic Leaded Chip Carrier CY7C276-25HMB H67 44-Pin Windowed Leaded Chip Carrier CY7C276-25QMB Q67 44-Pin Windowed Leadless Chip Carrier CY7C276-30HC H67 44-Pin Windowed Leaded Chip Carrier CY7C276-30JC J67 44-Lead Plastic Leaded Chip Carrier CY7C276-30HMB H67 44-Pin Windowed Leaded Chip Carrier CY7C276-30QMB Q67 44-Pin Windowed Leadless Chip Carrier CY7C276-35HC H67 44-Pin Windowed Leaded Chip Carrier CY7C276-35JC J67 44-Lead Plastic Leaded Chip Carrier CY7C276-35HMB H67 44-Pin Windowed Leaded Chip Carrier CY7C276-35QMB Q67 44-Pin Windowed Leadless Chip Carrier Operating Range Commercial Military Commercial Military Commercial Military Note: 7. Most of the above products are available in industrial temperature range. Contact a Cypress representative for specifications and product availability. MILITARY SPECIFICATIONS Group A Subgroup Testing DC Characteristics Switching Characteristics Parameter Subgroups Parameter Subgroups VOH 1, 2, 3 tAA 7, 8, 9, 10, 11 VOL 1, 2, 3 tCSOV 7, 8, 9, 10, 11 VIH 1, 2, 3 tOEV 7, 8, 9, 10, 11 VIL 1, 2, 3 IIX 1, 2, 3 IOZ 1, 2, 3 ICC 1, 2, 3 Document #: 38-04004 Rev. ** Page 7 of 10 CY7C276 Package Diagrams 44-Pin Windowed Leaded Chip Carrier H67 51-80079 Document #: 38-04004 Rev. ** Page 8 of 10 CY7C276 Package Diagrams (continued) 44-Lead Plastic Leaded Chip Carrier J67 51-85003-A 44-Pin Windowed Leadless Chip Carrier Q67 MIL–STD–1835 C–5 51-80104 Document #: 38-04004 Rev. ** Page 9 of 10 © Cypress Semiconductor Corporation, 2002. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY7C276 Document Title: CY7C276 16K x 16 Programmable PROM Document Number: 38-04004 REV. ECN NO. Issue Date Orig. of Change ** 113860 03/06/02 DSG Document #: 38-04004 Rev. ** Description of Change Change from Spec number: 38-00183 to 38-04004 Page 10 of 10