High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0405 Features • Ideal for High Gain, Low Current Applications Description Surface Mount Plastic Package/ SOT-343 (SC-70) Agilent’s HBFP-0405 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Outline 4T • Typical Performance at 1.8 GHz Associated Gain of 18 dB and Noise Figure of 1.2 dB at 2 V and 2 mA P1dB of 5 dBm at 2 V and 5 mA • Transition Frequency fT = 25 GHz Pin Configuration Base Applications • LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and Down Converter for Cellular and PCS Handsets and Cordless Telephones • Oscillator for TV Delivery and TVRO Systems up to 12 GHz Emitter 02x • Miniature 4-lead SC-70 (SOT-343) Plastic Package Emitter Collector Note: Package marking provides orientation and identification. 02 = Device code x = Date code character. A new character is assigned for each month, year HBFP-0405 provides an associated gain of 18 dB, noise figure of 1.2 dB, and P1dB of 5 dBm at 1.8 GHz. Because of high gain and low current characteristics, HBFP-0405 is ideal for cellular/ PCS as well as for C-Band and Ku-Band applications. This product is based on a 25 GHz transition frequency fabrication process, which enables the products to be used for high performance, low noise applications at 900 MHz, 1.9 GHz, 2.4 GHz, and beyond. 2 HBFP-0405 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Units Absolute Maximum[1] V V V mA mW °C °C 1.5 15.0 4.5 12 54 150 -65 to 150 Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2] Junction Temperature Storage Temperature Thermal Resistance: θ jc = 550°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. PT limited by maximum ratings. Electrical Specifications, TC = 25°C Symbol Parameters and Test Conditions DC Characteristics BVCEO Collector-Emitter Breakdown Voltage I CBO Collector-Cutoff Current I EBO Emitter-Base Cutoff Current hFE DC Current Gain RF Characteristics FMIN Minimum Noise Figure Ga IC = 1 mA, open base Units Min. V 4.5 Max. VCB = 5 V, IE = 0 nA 150 VEB = 1.5 V, IC = 0 µA 15 VCE = 2 V, IC = 2 mA — IC = 2 mA, VCE = 2 V, f = 1.8 GHz dB Associated Gain IC = 2 mA, VCE = 2 V, f = 1.8 GHz dB |2 Insertion Power Gain IC = 5 mA, VCE = 2 V, f = 1.8 GHz dB P-1dB Power Output @ 1 dB Compression Point IC = 5 mA, VCE = 2 V, f = 1.8 GHz dBm |S 21 Typ. 50 16.5 80 150 1.2 1.5 18 17 5 3 HBFP-0405 Typical Scattering Parameters, VCE = 2 V, IC = 2 mA, TC = 25°C S21 S11 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0.910 0.889 0.855 0.841 0.774 0.730 0.701 0.634 0.570 0.521 0.477 0.443 0.412 0.386 0.372 0.369 0.366 0.370 0.387 0.405 0.421 0.437 0.454 -4.2 -21.2 -37.6 -41.4 -60.9 -72.0 -79.4 -96.0 -112.3 -127.0 -141.2 -154.7 -168.7 177.1 162.2 147.7 130.7 116.2 102.9 91.4 80.9 70.5 60.3 16.5 16.3 15.7 15.6 14.8 14.3 13.9 13.0 12.0 11.2 10.4 9.7 9.0 8.5 7.9 7.5 7.1 6.6 6.2 5.7 5.3 4.9 4.4 6.665 6.496 6.101 5.993 5.484 5.164 4.964 4.450 3.996 3.620 3.320 3.047 2.829 2.646 2.493 2.371 2.258 2.141 2.042 1.937 1.834 1.753 1.669 176.2 160.6 146.0 142.5 125.9 116.8 110.9 97.0 84.7 73.4 62.9 53.6 44.2 34.9 25.6 16.8 8.1 -1.3 -9.8 -18.3 -26.6 -35.2 -43.7 -49.6 -35.6 -30.4 -29.5 -26.4 -25.1 -24.5 -23.4 -22.7 -22.3 -21.9 -21.8 -21.5 -21.3 -21.0 -20.7 -20.4 -20.0 -19.8 -19.5 -19.3 -19.0 -18.8 0.003 0.017 0.030 0.033 0.048 0.055 0.059 0.068 0.073 0.077 0.080 0.082 0.084 0.087 0.089 0.093 0.096 0.100 0.103 0.105 0.109 0.112 0.115 88.5 80.5 71.9 69.6 57.5 50.6 46.4 37.0 28.7 21.7 15.6 10.7 6.0 1.6 -2.1 -7.0 -10.7 -14.7 -19.2 -23.6 -27.9 -32.4 -37.0 0.995 0.982 0.951 0.937 0.880 0.843 0.817 0.758 0.708 0.669 0.634 0.613 0.591 0.571 0.550 0.525 0.496 0.471 0.444 0.425 0.411 0.398 0.385 -2.2 -10.5 -18.8 -20.9 -30.8 -36.4 -39.8 -47.8 -54.9 -60.9 -66.4 -71.5 -76.4 -80.8 -86.1 -90.5 -95.2 -100.2 -106.7 -113.9 -121.3 -127.7 -133.5 HBFP-0405 Noise Parameters: VCE = 2 V, IC = 2 mA Γopt Freq. Fmin GHz dB Mag 1.07 1.09 1.19 1.25 1.29 1.39 1.48 1.57 1.70 1.78 1.87 2.00 2.10 2.18 2.29 2.35 2.50 2.65 2.76 2.93 2.94 0.569 0.558 0.504 0.474 0.456 0.423 0.391 0.352 0.318 0.290 0.257 0.215 0.179 0.157 0.125 0.116 0.140 0.163 0.191 0.226 0.254 0.9 1.0 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 RN Ga Ang Ω dB 9.3 11.6 22.0 28.7 33.6 48.2 59.3 72.1 83.1 93.9 107.3 118.3 133.7 153.1 -179.2 -154.8 -123.4 -104.1 -89.2 -73.4 -61.4 20.9 20.6 19.2 18.5 18.0 16.6 15.6 14.2 13.0 12.1 10.9 10.5 10.4 10.2 11.0 12.0 13.7 15.9 18.6 22.3 26.3 23.46 22.67 19.64 18.28 17.50 15.91 14.39 13.29 12.29 11.43 10.71 10.03 9.47 8.97 8.50 7.98 7.63 7.21 6.81 6.51 6.16 S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point. 4 HBFP-0405 Typical Scattering Parameters, VCE = 2 V, IC = 5 mA, TC = 25°C S21 S11 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0.819 0.775 0.704 0.681 0.585 0.531 0.500 0.440 0.392 0.360 0.334 0.315 0.302 0.295 0.301 0.311 0.327 0.346 0.369 0.392 0.410 0.428 0.446 -6.2 -30.3 -52.4 -57.2 -81.5 -94.5 -102.7 -121.3 -138.9 -154.1 -168.9 177.0 162.5 148.1 133.7 120.4 105.9 94.0 83.4 74.1 65.6 56.9 48.2 22.0 21.5 20.6 20.3 18.8 17.9 17.3 15.9 14.6 13.5 12.5 11.6 10.9 10.2 9.6 9.0 8.5 8.0 7.6 7.1 6.6 6.2 5.7 12.630 11.912 10.664 10.308 8.689 7.817 7.306 6.208 5.362 4.716 4.214 3.814 3.491 3.229 3.010 2.827 2.668 2.520 2.389 2.261 2.141 2.038 1.937 174.5 153.5 134.9 130.7 111.9 102.5 96.7 83.7 72.4 62.3 52.9 44.3 35.7 27.4 19.0 10.8 2.6 -5.8 -13.8 -21.9 -29.9 -38.0 -46.0 -50.2 -36.2 -31.5 -30.8 -28.1 -27.2 -26.6 -25.6 -24.8 -24.2 -23.6 -23.1 -22.5 -22.0 -21.5 -21.0 -20.5 -20.0 -19.5 -19.1 -18.7 -18.4 -18.1 0.003 0.016 0.027 0.029 0.039 0.044 0.047 0.053 0.057 0.061 0.066 0.070 0.075 0.079 0.084 0.089 0.095 0.101 0.106 0.110 0.116 0.120 0.124 87.8 77.1 67.3 64.9 54.0 49.0 46.0 39.9 34.6 30.4 26.5 23.0 19.0 15.1 11.1 6.4 2.1 -3.0 -7.7 -12.8 -18.0 -23.1 -28.5 0.990 0.959 0.897 0.875 0.783 0.733 0.703 0.641 0.597 0.566 0.541 0.528 0.513 0.499 0.484 0.463 0.439 0.414 0.389 0.370 0.357 0.345 0.334 -2.8 -13.4 -23.3 -25.5 -35.2 -40.1 -43.0 -49.4 -55.0 -59.7 -64.2 -68.6 -73.0 -77.0 -82.0 -86.1 -90.5 -95.4 -101.6 -108.5 -115.8 -122.3 -127.9 HBFP-0405 Noise Parameters: VCE = 2 V, IC = 5 mA Γopt Freq. Fmin GHz dB Mag 0.9 1.0 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 1.36 1.38 1.46 1.52 1.55 1.65 1.73 1.79 1.93 1.99 2.08 2.18 2.32 2.37 2.48 2.56 2.69 2.85 2.99 3.10 3.12 0.386 0.375 0.333 0.305 0.292 0.246 0.208 0.187 0.153 0.123 0.104 0.065 0.051 0.068 0.101 0.133 0.177 0.212 0.246 0.282 0.314 RN Ga Ang Ω dB 2.8 5.0 17.7 25.5 31.9 50.0 59.9 73.6 85.6 100.2 119.5 141.5 -169.0 -129.9 -96.3 -82.9 -71.2 -62.8 -54.1 -46.1 -37.3 17.0 16.8 16.2 15.6 15.3 13.8 13.1 12.6 12.0 11.8 11.3 12.0 12.7 13.5 15.2 17.0 19.7 22.8 26.7 30.9 35.2 25.59 24.76 21.56 20.12 19.29 17.61 16.04 14.81 13.76 12.90 12.12 11.45 10.87 10.32 9.82 9.33 8.92 8.50 8.10 7.77 7.41 S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point. 5 HBFP-0405 Typical Performance 5 25 20 30 4 15 10 3 2 2 mA 5 mA 10 mA 15 mA 1 5 0 0 2 0 4 8 6 10 2 0 FREQUENCY (GHz) 4 8 6 25 20 15 0.9 GHz 1.8 GHz 2.5 GHz 3 GHz 4 GHz 5 GHz 6 GHz 10 5 0 10 0 2 FREQUENCY (GHz) 4 8 10 12 14 16 18 20 22 6 COLLECTOR CURRENT (mA) Figure 1. Associated Gain vs. Frequency and Collector Current at 2 V. Figure 2. Noise Figure vs. Frequency and Collector Current at VCE = 2 V. 3.50 30 3.00 25 Figure 3. Associated Gain vs. Collector Current and Frequency at 2 V. 2.50 0.9 GHz 2.50 2.00 1.50 0.9 GHz 1.8 GHz 2.5 GHz 3 GHz 4 GHz 5 GHz 6 GHz 1.00 0.50 0 0 2 4 6 8 10 12 14 0.9 GHz 1.8 GHz 2.5 GHz 20 3 GHz 4 GHz 15 5 GHz 10 6 GHz Figure 4. Noise Figure vs. Collector Current and Frequency at 2 V. 2.5 GHz 3 GHz 1.50 4 GHz 5 GHz 1.00 6 GHz 0 0 COLLECTOR CURRENT (mA) 1.8 GHz 2.00 0.50 5 16 NOISE FIGURE (dB) ASSOCIATED GAIN (dB) NOISE FIGURE (dB) ASSOCIATED GAIN (dB) 2 mA 5 mA 10 mA 15 mA NOISE FIGURE (dB) ASSOCIATED GAIN (dB) 30 0 1 2 3 4 5 6 VOLTAGE (V) Figure 5. Associated Gain vs. Voltage and Frequency at 2 mA. 0 1 2 3 4 5 6 VOLTAGE (V) Figure 6. Noise Figure vs. Voltage and Frequency at 2 mA. 6 HBFP-0405 Die Model and PSPICE Parameters C CMP9 R CMP11 DIODEMODELFORM R = 6.5915 OH # DIODE MODEL # CMP5 C MODEL = DBE IS=IE-24 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= C = 17.213E-3 pF CMP2 DIODE AREA= REGION= MODEL = DBC TEMP= CMP3 DIODE CMP1 NPNBJTSUBST CMP7 R RS= CJO=2.593E-14 TT= EG= VJ=0.8971 M=2.292E-1 N=1.0029 FC=0.8 ISR= NR= IKF= NBV= IBVL= NBVL= FFE= AREA= REGION= MODEL=DCS TEMP= B R=3.74196 OH C = 6.227E-3 pF CMP6 C AREA= REGION= MODEL=BJTMODEL CMP16 DIODE TEMP= MODEL=DBE REGION= AREA= CMP8 R R=1.565 OH CMP10 DIODEMODELFORM # DIODE MODEL # MODEL = DBC IS=I.40507E-17 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= RS= CJO=2.393E-14 TT= EG= VJ=0.729 M=0.44 N=1 FC=0.8 ISR= NR= IKF= NBV= IBVL= NBVL= FFE= CMP69 R CMP12 DIODEMODELFORM XX R=1 OH E CMP68 BITMODELFORM # BJT MODEL # NPN=yes PNP= MODEL = BJTMODEL Forward Reverse BF=1E6 BR=1 IKF=1.4737E-1 IKR=1.1E-2 ISE=7.094E-20 ISC= NE=1.006 NC=2 VAF=4.4E1 VAR=3.37 NF=1 NR=1.005 TF=5.3706E-12 TR=4E-9 XTF=20 VTF=0.8 ITF=2.21805486E-1 PTF=0 XTB=0.7 APPROXOB=yes Diode and junction EG=1.17 CJC=2.7056E-14 IS=4.4746E-18 VJC=.6775 IMAX= MJC=0.3319 XTI=3 XCJC=4.39790997E-1 TNOM=21 FC=0.8 Substrate IS5= NS= Parasitics Noise RB-9.30144818 KI= IRB=3.029562E-6 AF= KB= RBM=.1 RE= AB= RC= FB= # DIODE MODEL # MODEL = DCS IS=IE-24 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= RS=2.17347E2 CJO=8.974E-14 TT= EG= VJ=0.6 M=0.42 N= FC=0.8 ISR= NR= IKF= NBV= IBVL= NBVL= FFE= CJE=7.474248E-14 VJE=0.9907 Substrate MJE=0.5063 IS5= NS= CJS= VJS= MJS= This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more precise and accurate design, please refer to the measured data in this data sheet. Note: The value of beta was high (BF = 1E6) to compensate for the fact that diode DBE reduces the current going into the base (current flows through DBE). The diodes are necessary to model the non-linear effects. 7 SOT343 Package Model C = 0.05 pF CCBC C LLB L LT1 L LLI L L = 0.22 nH L = 0.2 nH L = 0.7 nH C = 0.08 pF C2T1 C C = 0.05 pF AGROUND C1T1 C AGROUND BASE COLLECTOR EMITTER CMP44 L L = 0.7 nH C1T3 C CCEB C LL2 L L = 0.2 nH C = 0.01 pF LT3 L LL3 L L = 0.5 nH L = 0.2 nH C = 0.1 pF C = 0.1 pF AGROUND C1T2 C L = 0.1 nH LT2 L C = 0.04 pF AGROUND C2T2 C L = 0.15 nH LLE L AGROUND C = 0.144 pF CCEC C AGROUND C = 0.04 pF C2T3 C AGROUND 8 Part Number Ordering Information Part Number Devices per Reel Container Tape Orientation 100 3000 10,000 3000 antistatic bag 7" Reel 13" Reel 7" Reel none standard standard reverse HBFP-0405-BLK HBFP-0405-TR1 HBFP-0405-TR2 HBFP-0405-TR3 Package Dimensions SOT-343 (SC-70 4 Lead) 1.30 (0.051) BSC 1.30 (.051) REF 2.60 (.102) E 1.30 (.051) E1 0.85 (.033) 0.55 (.021) TYP 1.15 (.045) BSC e 1.15 (.045) REF D h A b TYP A1 L θ DIMENSIONS SYMBOL A A1 b C D E e h E1 L θ MAX. MIN. 1.00 (0.039) 0.80 (0.031) 0.10 (0.004) 0 (0) 0.35 (0.014) 0.25 (0.010) 0.20 (0.008) 0.10 (0.004) 2.10 (0.083) 1.90 (0.075) 2.20 (0.087) 2.00 (0.079) 0.65 (0.025) 0.55 (0.022) 0.450 TYP (0.018) 1.35 (0.053) 1.15 (0.045) 0.35 (0.014) 0.10 (0.004) 10 0 DIMENSIONS ARE IN MILLIMETERS (INCHES) C TYP 9 Device Orientation TR1, TR2 TOP VIEW 4 mm REEL 8 mm 02x 02x 02x END VIEW 02x CARRIER TAPE USER FEED DIRECTION TR3 TOP VIEW 4 mm END VIEW COVER TAPE 02x 02x 02x 8 mm 02x Tape Dimensions For Outline 4T P P2 D P0 E F W C D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) K0 8° MAX. A0 DESCRIPTION 5° MAX. B0 SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.24 ± 0.10 2.34 ± 0.10 1.22 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.088 ± 0.004 0.092 ± 0.004 0.048 ± 0.004 0.157 ± 0.004 0.039 + 0.010 PERFORATION DIAMETER PITCH POSITION D P0 E 1.55 ± 0.05 4.00 ± 0.10 1.75 ± 0.10 0.061 ± 0.002 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 ± 0.30 0.255 ± 0.013 0.315 ± 0.012 0.010 ± 0.0005 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.4 ± 0.10 0.062 ± 0.001 0.205 ± 0.004 0.0025 ± 0.00004 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 www.semiconductor.agilent.com Data subject to change. Copyright © 2000 Agilent Technologies, Inc. Obsoletes 5968-7939E 5988-0131EN (9/00)