APT75DL60HJ ISOTOP®Fast Diode Full Bridge Power Module VRRM = 600V IF = 75A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • • + ~ ~ Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP® Package (SOT-227) Benefits • • • • • • - Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(AV) Maximum Average Forward Current IFRM Maximum repetitive forward current limited by TJmax Duty cycle = 50% TC = 80°C Max ratings Unit 600 V 75 A 8.3ms TJ = 45°C 150 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APT75DL60HJ – Rev 0 November, 2009 Absolute maximum ratings APT75DL60HJ All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions VF Diode Forward Voltage IF = 75A IRM Maximum Reverse Leakage Current VR = 600V Min Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Typ 1.6 1.5 Max 2 Unit V 250 500 µA Max Unit Dynamic Characteristics Symbol Characteristic Test Conditions trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 75A VR = 300V di/dt = 2000A/µs Err Reverse Recovery Energy Min Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Typ 100 150 3.6 7.6 0.85 1.8 ns µC mJ Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -55 Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight Typ Max 0.98 20 Unit °C/W V 175 300 1.5 29.2 °C N.m g SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 1.95 (.077) 2.14 (.084) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Dimensions in Millimeters and (Inches) 38.0 (1.496) 38.2 (1.504) www.microsemi.com 2-3 APT75DL60HJ – Rev 0 November, 2009 31.5 (1.240) 31.7 (1.248) APT75DL60HJ Typical Performance Curve Forward Characteristic of diode Energy losses vs Collector Current 150 3 VCE = 300V VGE= -15V TJ = 150°C 125 Err (mJ) IF (A) 100 75 50 2 1 TJ=150°C 25 TJ=25°C 0 0 0 0.4 0.8 1.2 1.6 VF (V) 2 0 2.4 25 50 75 100 125 150 IF (A) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.8 0.9 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APT75DL60HJ – Rev 0 November, 2009 Rectangular Pulse Duration in Seconds