HUR6060PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-247AD A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR6060PT Symbol VRRM V 600 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM TVJ=45oC; tp=10ms (50Hz), sine EAS IAR o TVJ=25 C; non-repetitive; IAS=1.3A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive Millimeter Min. Max. Ptot TC=25oC Md mounting torque typical Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 Maximum Ratings Unit 70 2 x 30 A 250 A 0.2 mJ 0.1 A -55...+175 175 -55...+150 TVJ TVJM Tstg Weight Dim. o C 165 W 0.8...1.2 Nm 6 g HUR6060PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 250 1 uA mA VF IF=30A; TVJ=150oC TVJ=25oC 1.25 1.60 V RthJC RthCH trr IRM 0.9 0.25 IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC o VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C K/W 35 ns 6 A FEATURES APPLICATIONS ADVANTAGES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR6060PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 70 A 60 3000 50 T = 100°C nC VVJ = 300V R 2500 IRM Qr IF 50 TVJ=150°C 2000 TVJ=100°C 1500 IF= 60A IF= 30A IF= 15A 40 30 TVJ= 100°C VR = 300V A 40 IF= 60A IF= 30A IF= 15A 30 20 1000 20 TVJ=25°C 0 0.0 0.5 1.0 1.5 VF 10 500 10 0 100 V2.0 Fig. 1 Forward current IF versus VF 0 A/us 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 130 2.0 120 600 A/us 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 1.2 us VFR tfr 0.9 IF= 60A IF= 30A IF= 15A 110 100 1.0 400 V VFR tfr 15 trr Kf 200 20 TVJ= 100°C VR = 300V ns 1.5 0 10 0.6 5 0.3 IRM 90 0.5 Qr 80 0.0 TVJ= 100°C IF = 30A 70 0 40 80 120 °C 160 0 0 TVJ 200 400 600 800 1000 A/us 0 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 1 0.0 600 A/us 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC 0.01 0.001 0.00001 200 0.0001 0.001 0.01 s 0.1 t Fig. 7 Transient thermal resistance junction to case 1 Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0396