PA2100 Dual-Band GSM Power Amplifier Module Advance Information the wireless IC company HiMARK Technology, Inc. reserves the right to change the product described in this datasheet. All information contained in this datasheet is subject to change without prior notice. HiMARK Technology, Inc. assumes no responsibility for the use of any circuits shown in this datasheet. Description in ar y The PA2100 is a Dual-Band Power Amplifier (PA) Multi-Chip Module (MCM) for use as a final RF amplifier in GSM900 and DCS1800 hand-held digital cellular equipment and other applications in the 880-to-915MHz and 1710-to-1785MHz bands. The device consists of a PAIC manufactured on an advanced Gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) process, a CMOS current buffer, and off-chip passive components for 50ohm input/output impedance match. The IC chip has two separate blocks, one of which operates in the GSM900 band and the other in the DCS1800 band. The CMOS current buffer minimizes the requisite power control current to as low as 60µA. The die and components are mounted on a laminate substrate and encapsulated with plastic molding to minimize board space. Features Single 2.9 to 4.8V Supply Voltage +35dBm GSM Output Power at 3.5V +32.5dBm DCS Output Power at 3.5V 55% GSM and 50% DCS Efficiency Supports GSM and DCS 16-pin LCC package (9.1mm x 11.6mm) Pr el Applications im Class 4 GSM900 and Class 1 DCS1800 Dual-Band Cellular Handsets Commercial and Consumer Systems Portable Battery-Powered Equipment Block Diagram DCS_IN Power Control Band Select GSM_IN VCC Match CMOS Current Buffer Match DCS_OUTPUT Match GSM_OUTPUT HBT Match Page 1 January 2002 PA2100 Dual-band GSM PA Module the wireless IC company Package and Pin Assignment: 16-Pin LCC B B2 C im C Dimensions in mm Pr el Symbols A4 C A3 A2 in C A ar B2 y B3 A1 Dimensions in inch min. nom. max. min. nom. max. A — 9.09 — — 0.358 — A1 — 2.29 — — 0.090 — A2 — 4.17 — — 0.164 — A3 — 4.93 — — 0.194 — A4 — 6.84 — — 0.268 — B — 11.61 — — 0.457 — B1 — 1.02 — — 0.040 — B2 — 1.90 — — 0.075 — B3 — 7.04 — — 0.277 — C — 1.91 — — 0.075 — Page 2 January 2002 PA2100 Dual-band GSM PA Module the wireless IC company Pin Descriptions Number Name Description 1 GND 2 DCS_IN 3 GND 4 GSM_IN 5 GND Ground. 6 VCC Power supply for PA 7 GND Ground. 8 VCC Power supply for PA 9 GND Ground. 10 GSM_OUT 11 GND 12 DCS_OUT 13 GND Ground. 14 APC Analog Power Control 15 GND Ground. 16 BS 17 GND Ground. y DCS RF input Ground. in ar GSM RF input GSM RF output Ground. im DCS RF output Pr el Band select Ground. GND 14 GSM_IN APC 3 15 GND GND 2 16 1 BS GND DCS_IN 13 GND 12 DCS_OUT 11 GND 4 10 GSM_OUT 5 9 GND 17 GND 6 7 8 VCC GND VCC Page 3 January 2002 PA2100 Dual-band GSM PA Module the wireless IC company Absolute Maximum Ratings Rating Unit Supply Voltage VCC -0.5 to +6.0 V Control Voltage VAPC -0.5 to +3.0 V PIN 15 TSTG –55 to 100 Input Power Storage Temperature Range Parameter Symbol VCC im Supply Voltage Range dBm °C in Recommended Operating Conditions y Symbol ar Parameter TA Unit min. typ. max. 2.9 3.5 4.8 V -40 25 85 °C Pr el Operating Temperature Value Page 4 January 2002 PA2100 Dual-band GSM PA Module the wireless IC company Electrical Characteristics (VCC = 3.5V, TA = 25°C, RL=50 Ohm, pulsed operation with pulse width = 577 µs and duty cycle of 1:8 unless otherwise noted) Symbol VCC Value min. typ. max. Input VSWR 2.9 3.5 4.8 All Frequency Range GSM900 f1 Frequency Range DCS1800 f2 PIN,GSM Input Power DCS1800 PIN,DCS ηGSM Efficiency DCS1800 ηDCS V 2:1 880 915 MHz 1710 1785 MHz 12 dBm 11 dBm 6 10 6 PIN,GSM=10dBm 50 55 % PIN,DCS=8dBm 45 50 % 35 dBm im Efficiency GSM900 1.5:1 in Input Power GSM900 Unit ar VCC Supply Voltage Condition y Parameter POUT,GSM PIN,GSM=10dBm 34.5 POUT,GSM PIN,GSM=10dBm, Vcc=2.7V 32 POUT,DCS PIN,DCS=8dBm 32 POUT,DCS PIN,DCS=8dBm, Vcc=2.7V 29.5 Isolation GSM900 PIN,GSM=10dBm, APC=0.2V -30 -40 dBm Isolation DCS1800 PIN,DCS=8dBm, APC=0.2V -30 -40 dBm Output Power GSM900 Pr el Output Power DCS1800 Cross Isolation Noise Floor GSM900 Noise Floor DCS1800 POUT,GSM=34.5dBm dBm 32.5 dBm dBm -30 -25 dBm PIN,GSM=10dBm, BW=100kHz, fo+20MHz offset -84 dBm PIN,DCS=8dBm, BW=100kHz, fo+20MHz offset -76 dBm GSM 2nd to 13th Harmonic Distortion POUT,GSM=34.5dBm -41.5 -45 dBc DCS 2nd to 13th Harmonic Distortion POUT,DCS=32dBm -38.5 -50 dBc Leakage current Stability VCC=4.5V, VAPC=0V, VBS=0V 2 All operating conditions for VAPC, Vcc, Pin=min. to max. Load VSWR=8:1, all angles No spurious oscillations above -36dBm Page 5 10 µA January 2002 PA2100 Dual-band GSM PA Module the wireless IC company Parameter Symbol Load Mismatch Condition All operating conditions for VAPC, Vcc, Pin=min. to max. Load VSWR=10:1, all angles min. typ. Unit max. No damage/degradation y Bandselect Thresholds Value 0.5 GSM V V 2.0 Control Voltage Range ar DCS VAPC 0.2 POUT,GSM=34.5dBm or POUT,DCS=32dBm IAPC Rise Time and Fall Time τrise, τfall POUT,GSM=34.5dBm or POUT,DCS=32dBm V 2.0 V 60 µA 2 µsec Pr el im Control Current into VAPC in Full Power Control Voltage 2.2 Page 6 January 2002