DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA2782GR SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA2782GR is N-Channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC converter application. 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES • Built a Schottky Barrier Diode • Low on-state resistance RDS(on)1 = 11 mΩ TYP. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 16 mΩ TYP. (VGS = 4.5 V, ID = 5.5 A) RDS(on)3 = 19 mΩ TYP. (VGS = 4.0 V, ID = 5.5 A) • Low Ciss: Ciss = 660 pF TYP. • Small and surface mount package (Power SOP8) PACKAGE µ PA2782GR Power SOP8 4.4 0.15 0.05 MIN. ORDERING INFORMATION PART NUMBER 6.0 ±0.3 4 5.37 MAX. 0.40 +0.10 –0.05 VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) [MOSFET] ID(DC) ±11 A ID(pulse) ±44 A IF(AV) 2.5 A [MOSFET] PT 2 W [SCHOTTKY] PT 1 W Tch, Tj 150 °C Drain Current (pulse) Note1 Average Forward Current Note2 Total Power Dissipation Note3 Total Power Dissipation Note3 [SCHOTTKY] Channel & Junction Temperature Storage Temperature Tstg −55 to + 150 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Rectangle wave, 50% Duty Cycle 2 3. Mounted on ceramic substrate of 1200 mm x 2.2 mm 0.5 ±0.2 0.10 1.27 0.78 MAX. ABSOLUTE MAXIMUM RATINGS (TA = 25°C. All terminals are connected.) Drain to Source Voltage (VGS = 0 V) 0.8 +0.10 –0.05 1.8 MAX. 1.44 1 0.12 M EQUIVALENT CIRCUIT Drain Gate Gate Protection Diode Schottky Diode Source °C Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16421EJ1V0DS00 (1st edition) Date Published April 2003 NS CP(K) Printed in Japan 2002 µPA2782GR ELECTRICAL CHARACTERISTICS (TA = 25°C, unless other wise noted. All terminals are connected.) CHARACTERISTICS Zero Gate Voltage Drain Current SYMBOL Note IDSS Gate Leakage Current IGSS Gate Cut-off Voltage Drain to Source On-state Resistance Note TEST CONDITIONS MIN. TYP. MAX. UNIT VDS = 24 V, VGS = 0 V 50 µA VDS = 24 V, VGS = 0 V, TA = 125°C 10 mA VGS = ±20 V, VDS = 0 V ±10 µA 2.5 V VGS(off) VDS = 10 V, ID = 1 mA 1.0 RDS(on)1 VGS = 10 V, ID = 5.5 A 11 15 mΩ RDS(on)2 VGS = 4.5 V, ID = 5.5 A 16 22.5 mΩ RDS(on)3 VGS = 4.0 V, ID = 5.5 A 19 29 mΩ Input Capacitance Ciss VDS = 10 V 660 pF Output Capacitance Coss VGS = 0 V 340 pF Reverse Transfer Capacitance Crss f = 1 MHz 83 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 5.5 A 9 ns tr VGS = 10 V 5 ns td(off) RG = 10 Ω 29 ns 6 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 15 V 7.1 nC Gate to Source Charge QGS VGS = 5 V 2.1 nC QGD ID = 11 A 3.1 nC IF = 1 A, VGS = 0 V 0.45 IF = 1 A, VGS = 0 V, TA = 125°C 0.37 V Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) 0.5 V Reverse Recovery Time trr IF = 7 A, VGS = 0 V 25 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 14 nC Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA td(off) tf toff Data Sheet G16421EJ1V0DS µPA2782GR TYPICAL CHARACTERISTICS (TA = 25°C. All terminals are connected.) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 2.8 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 Mounted on ceramic substrate of 2 1200 mm x 2.2 mm 2.4 MOSFET 2 1.6 SCHOTTKY 1.2 0.8 0.4 0 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 20 40 60 80 100 120 140 160 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 PW = 100 µs ID(DC) 1 ms 10 DC RDS(on) Limited (at VGS = 10 V) 1 10 ms 100 ms Power Dissipation Limited 0.1 Single pulse Mounted on ceramic substrate of 2 1200 mm x 2.2 mm 0.01 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (MOSFET) 1000 Rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(pulse) Rth(ch-A) = 62.5°C/W 100 10 1 2 Mounted on ceramic substrate of 1200 mm × 2.2 mm Single pulse 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16421EJ1V0DS 3 µPA2782GR TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (SCHOTTKY) Rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(j-A) = 125°C/W 100 10 1 2 Mounted on ceramic substrate of 1200 mm x 2.2 mm Single pulse 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 50 3 Pulsed VDS = 10 V ID = 1 mA VGS(off) - Gate Cut-off Voltage - V ID - Drain Current - A 45 40 VGS = 10 V 4.5 V 35 30 4.0 V 25 20 15 10 5 0 0 0.5 1 1.5 2.5 2 1.5 1 0.5 0 - 50 2 30 Pulsed 25 VGS = 4.0 V 4.5 V 15 10 V 10 5 0 0.1 1 10 ID - Drain Current - A 100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 0 50 100 150 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 25 20 15 ID = 5.5 A 10 Data Sheet G16421EJ1V0DS 5 0 0 5 10 15 VGS - Gate to Source Voltage - V 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 40 Pulsed Ciss, Coss, Crss - Capacitance - pF 35 30 VGS = 4.0 V 25 4.5 V 20 15 10 V 10 V GS = 0 V f = 1 MHz 1000 C iss C oss 100 C rss 5 0 - 50 0 50 100 10 0.01 150 SWITCHING CHARACTERISTICS 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 6 30 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C 1000 VDD = 15 V VGS = 10 V RG = 10 Ω 100 td(off) 10 td(on) tf tr ID = 11 A 25 5 VDD = 24 V 15 V 6V 4 20 VGS 15 3 2 10 VDS 1 5 0 0 1 0.1 1 10 0 100 2 4 6 8 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE SOURCE TO DRAIN DIODE REVERSE CURRENT 100 100000 125°C IR - Reverse Current - µA IF - Diode Forward Current - A 0.1 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ µPA2782GR T A = 25°C 10 1 0.1 0.2 0.4 0.6 0.8 1 1000 VDS = 30 V 100 10 1 24 V 0.1 VGS = 0 V Pulsed 0 10000 1.2 0.01 - 50 0 50 100 150 Tj - Junction Temperature - °C VF(S-D) - Source to Drain Voltage - V Data Sheet G16421EJ1V0DS 5 µPA2782GR • The information in this document is current as of April, 2003. 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