DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2711GR SWITCHING P-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION The µ PA2711GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain FEATURES • Low on-state resistance RDS(on)1 = 9 mΩ MAX. (VGS = −10 V, ID = −6.5 A) RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A) RDS(on)3 = 20 mΩ MAX. (VGS = −4.0 V, ID = −6.5 A) • Low Ciss: Ciss = 2450 pF TYP. • Small and surface mount package (Power SOP8) ORDERING INFORMATION PART NUMBER PACKAGE µ PA2711GR Power SOP8 6.0 ±0.3 4 4.4 5.37 MAX. 0.8 0.15 +0.10 –0.05 1.44 0.05 MIN. 1.8 MAX. 1 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS –30 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V Drain Current (DC) ID(DC) m13 A Drain Current (pulse) Note1 ID(pulse) m52 A Total Power Dissipation Note2 PT1 2 W Total Power Dissipation Note3 PT2 2 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Single Avalanche Current Note4 IAS −13 A Single Avalanche Energy Note4 EAS 16.9 mJ EQUIVALENT CIRCUIT Drain Body Diode Gate Source Notes 1. 2. 3. 4. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 Mounted on ceramic substrate of 1200 mm x 2.2 mm Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec Starting Tch = 25°C, VDD = –15 V, RG = 25 Ω, L = 100 µH, VGS = –20 → 0 V Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G15979EJ1V0DS00 (1st edition) Date Published March 2004 NS CP(K) Printed in Japan 2004 µ PA2711GR ELECTRICAL CHARACTERISTICS (TA = 25°C, Unless otherwise noted, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V –1 µA Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m100 µA –2.5 V Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note VGS(off) VDS = −10 V, ID = −1 mA –1.0 | yfs | VDS = −10 V, ID = −6.5 A 10 RDS(on)1 VGS = −10 V, ID = −6.5 A 7.4 9 mΩ RDS(on)2 VGS = −4.5 V, ID = −6.5 A 10 15 mΩ RDS(on)3 VGS = −4.0 V, ID = −6.5 A 12 20 mΩ 22 S Input Capacitance Ciss VDS = −10 V 2450 pF Output Capacitance Coss VGS = 0 V 740 pF Reverse Transfer Capacitance Crss f = 1 MHz 410 pF Turn-on Delay Time td(on) VDD = −15 V, ID = −6.5 A 10 ns VGS = −10 V 15 ns RG = 10 Ω 230 ns 130 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = −24 V 57 nC Gate to Source Charge QGS VGS = −10 V 6.3 nC QGD ID = −13 A 19 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 13 A, VGS = 0 V 0.81 V Reverse Recovery Time trr IF = 13 A, VGS = 0 V 62 ns Reverse Recovery Charge Qrr di/dt = 50 A/µs 31 nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL 50 Ω PG. VGS = −20 → 0 V VDD RG PG. VGS(−) VGS Wave Form 0 VGS 10% 90% VDD VDS(−) − IAS BVDSS VDS ID VGS(−) 0 VDS Wave Form τ VDD Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. PG. 2 IG = −2 mA RL 50 Ω VDD Data Sheet G15979EJ1V0DS VDS 90% 90% 10% 10% 0 td(on) tr td(off) ton tf toff µ PA2711GR ELECTRICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 2.8 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 Mounted on ceramic substrate of 1200 mm2 x 2.2 mm 2.4 2 1.6 1.2 0.8 0.4 0 0 0 25 50 75 100 125 150 175 0 25 TA - Ambient Temperature - °C 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA -100 ID(pulse) PW = 100 µ s ID(DC) -10 1 ms DC -1 10 ms Power Dissipation Limited 100 ms -0.1 Single pulse, TA = 25°C Mounted on ceramic substrate of 1200 mm2 x 2.2 mm, 1unit -0.01 -0.01 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A RDS(on) Limited (at VGS = −10 V) Rth(ch-A) = 62.5°C/W 100 10 1 0.1 Single pulse, TA = 25°C Mounted on ceramic substrate of 1200 mm2 x 2.2 mm 0.01 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G15979EJ1V0DS 3 µ PA2711GR DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -60 -1000 −4.5 V VGS = −10 V ID - Drain Current - A ID - Drain Current - A -50 −4.0 V -40 -30 -20 -100 Tch = −55°C 25°C 75°C 150°C -10 -1 -0.1 -10 Pulsed VDS = −10 V Pulsed 0 -0.01 0 -0.4 -0.8 -1.2 0 -1 VDS - Drain to Source Voltage - V - -1.5 -1 Pulsed VDS = −10 V 0 0 50 100 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V -2.5 -50 Tch = −55°C 25°C 75°C 150°C 10 1 Pulsed VDS = −10 V 0.1 -0.1 150 Pulsed 25 VGS = −4.0 V −4.5 V −10 V 10 5 -1 -10 -100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 30 0 -0.1 -10 -100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID - Drain Current - A 4 -1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 15 -5 100 Tch - Channel Temperature - °C 20 -4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT -3 -0.5 -3 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -2 -2 40 Pulsed ID = −6.5 A 30 20 10 0 0 -5 -10 -15 VGS - Gate to Source Voltage - V Data Sheet G15979EJ1V0DS -20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 30 10000 25 V GS = −4.0 V −4.5 V −10 V 15 10 5 Pulsed ID = −6.5 A 0 -50 0 50 100 Ciss Coss 1000 Crss 100 VGS = 0 V f = 1 MHz 10 -0.01 150 SWITCHING CHARACTERISTICS -10 -100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS -30 td(off) 100 tf tr 10 td(on) 1 -0.1 -1 VDD = −15 V VGS = −10 V RG = 10 Ω -10 VDS - Drain to Source Voltage - V 1000 td(on), tr, td(off), tf - Switching Time - ns -1 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C -15 ID = −13 A VDD = −24 V −15 V −6 V -20 -10 -10 -5 VGS VDS 0 -100 0 0 ID - Drain Current - A 10 20 30 40 50 60 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 trr - Reverse Recovery Time - ns 1000 IF - Diode Forward Current - A -0.1 0V VGS = −10 V 10 1 0.1 100 10 di/dt = 50 A/µs VGS = 0 V Pulsed 1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 0.1 1 10 100 IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet G15979EJ1V0DS 5 VGS - Gate to Source Voltage - V 20 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ µ PA2711GR µ PA2711GR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 Energy Derating Factor - % IAS - Single Avalanche Current - A -100 IAS = −13 A -10 -1 EAS = 16.9 mJ VDD = −15 V VGS = −20 → 0 V RG = 25 Ω Starting Tch = 25°C 100 80 60 40 20 -0.1 10 m 0 100 m 1 10 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - H 6 VDD = −15 V RG = 25 Ω VGS = −20 → 0 V IAS ≤ −13 A Data Sheet G15979EJ1V0DS µ PA2711GR • The information in this document is current as of March, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1