ETC UPC4741C(5)

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC4741
HIGH PERFORMANCE QUAD OPERATIONAL AMPLIFIER
DESCRIPTION
The µPC4741 consists of four independent frequency compensated operational amplifiers featuring higher speed,
broader band than general purpose type as 741. The µPC4741 is most appropriate for AC signal amplifier applications
such as active filters or pulse amplifiers.
FEATURES
• Internal frequency compensation
• Low noise
• Output short circuit protection
ORDERING INFORMATION
Part Number
Package
µPC4741C
µPC4741C(5)
µPC4741G2
µPC4741G2(5)
14-pin plastic DIP (7.62 mm (300))
14-pin plastic DIP (7.62 mm (300))
14-pin plastic SOP (5.72 mm (225))
14-pin plastic SOP (5.72 mm (225))
EQUIVALENT CIRCUIT (1/4 Circuit)
µ PC4741C, 4741G2
+
R1
OUT1 1
Q9
Q5
Q14
II1 2
Q12
II
Q1
Q2
Q8
R5
Q10
IN
C1
Q6
Q7
Q3
Q4
Q16
R4
R2
− +
4
+ −
R7
D1
Q15
12 IN4
V+ 4
11 V−
II2 6
OUT
Q13
Q11
13 II4
IN1 3
IN2 5
R6
R8
V
14 OUT4
1
10 IN3
− +
2
− +
V
PIN CONFIGURATION (Top View)
3
OUT2 7
9 II3
8 OUT3
D2
R3
–
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16051EJ3V0DS00 (3rd edition)
(Previous No. IC-1197)
Date Published February 2002 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
©
1987
µPC4741
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
+
Voltage between V and V
Symbol
− Note1
V −V
+
Differential Input Voltage
Input Voltage
VID
Note2
Output Voltage
−
C
Power Dissipation
Package Note4
G2 Package
Output Short Circuit Duration
Unit
−0.3 to +40
V
±30
V
−
+
−
+
V −0.3 to V +0.3
VI
Note3
Ratings
V
VO
V −0.3 to V +0.3
V
PT
570
mW
550
mW
10
sec
Note5
Note6
Operating Ambient Temperature
TA
−20 to +80
°C
Storage Temperature
Tstg
−55 to +125
°C
Notes 1. Reverse connection of supply voltage can cause destruction.
2. The input voltage should be allowed to input without damage or destruction. Even during the transition
period of supply voltage, power on/off etc., this specification should be kept. The normal operation will
establish when the both inputs are within the Common Mode Input Voltage Range of electrical
characteristics.
3. This specification is the voltage which should be allowed to supply to the output terminal from external
without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this
specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of
electrical characteristics.
4. Thermal derating factor is –7.6 mW/°C when ambient temperature is higher than 50°C.
5. Thermal derating factor is –5.5 mW/°C when ambient temperature is higher than 25°C.
6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and
Note 5.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
2
Symbol
MIN.
V±
±4
Data Sheet G16051EJ3V0DS
TYP.
MAX.
Unit
±16
V
µPC4741
µPC4741C, 4741G2
ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±15 V)
Parameter
Input Offset Voltage
Input Offset Current
Input Bias Current
Symbol
TYP.
MAX.
Unit
±1.0
±5.0
mV
IIO
±30
±50
nA
IB
70
300
nA
210
mW
VIO
Note
Note
Conditions
MIN.
RS ≤ 100 Ω
Large Signal Voltage Gain
AV
RL ≥ 2 kΩ , VO = ±10 V
Power Consumption
Pd
IO = 0 A, All Amplifiers
25,000
50,000
150
Common Mode Rejection Ratio
CMR
Supply Voltage Rejection Ratio
SVR
Maximum Output Voltage
Vom
RL ≥ 10 kΩ
±12
±13.7
V
Maximum Output Voltage
Vom
RL ≥ 2 kΩ
±10
±12.5
V
Common Mode Input Voltage Range
VICM
±12
±14
V
Slew Rate
SR
AV = 1
1.6
V/ µs
Input Equivalent Noise Voltage Density
en
f = 1 kHz
9
nV/ Hz
f = 10 kHz
108
dB
Channel Separation
80
100
50
dB
100
µV/ V
Note Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.
µPC4741C (5), 4741G2 (5)
ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±15 V)
Parameter
Input Offset Voltage
Input Offset Current
Input Bias Current
Symbol
VIO
Note
Note
Conditions
MIN.
RS ≤ 100 Ω
IIO
TYP.
MAX.
Unit
±1.0
±2.0
mV
±30
±50
nA
100
nA
210
mW
IB
Large Signal Voltage Gain
AV
RL ≥ 2 kΩ , VO = ±10 V
Power Consumption
Pd
IO = 0 A, All Amplifiers
28,000
50,000
150
Common Mode Rejection Ratio
CMR
Supply Voltage Rejection Ratio
SVR
Maximum Output Voltage
Vom
RL ≥ 10 kΩ
±12.5
±13.7
V
Maximum Output Voltage
Vom
RL ≥ 2 kΩ
±11
±12.5
V
Common Mode Input Voltage Range
VICM
±13
±14
V
Slew Rate
SR
AV = 1
1.6
V/ µs
Input Equivalent Noise Voltage Density
en
f = 1 kHz
9
nV/ Hz
f = 10 kHz
108
dB
Channel Separation
85
90
dB
50
µV/ V
Note Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.
Data Sheet G16051EJ3V0DS
3
µPC4741
MEASUREMENT CIRCUIT
Fig.1 Channel Separation Measurement Circuit
50 kΩ
−
+
50 Ω
VO2
Channel Separation
VO2
= 20 log 1
1000
10 kΩ
10 kΩ
−
+
4
VO1
Data Sheet G16051EJ3V0DS
VO1
µPC4741
TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C, TYP.)
POWER DISSIPATION
OPEN LOOP FREQUENCY RESPONSE
600
120
AV - Open Loop Voltage Gain - dB
PT - Total Power Dissipation - mW
800
µ PC4741C
132˚C/W
µ PC4741G2
400
182˚C/W
200
V± = ±15 V
RL = 2 kΩ
CL = 50 pF
100
80
60
40
20
0
0
40
20
60
80
1
100
10
100
TA - Operating Ambient Temperature - ˚C
INPUT OFFSET VOLTAGE
3
IB - Input Bias Current - nA
1
0.5
0
−0.5
−1
−1.5
V ± = ±15 V
85
80
75
70
65
60
−2.5
55
20
40
60
50
−20
80
0
20
40
60
TA - Operating Ambient Temperature - ˚C
TA - Operating Ambient Temperature - ˚C
LARGE SIGNAL FREQUENCY RESPONSE
COMMON MODE INPUT VOLTAGE RANGE
30
V ± = ±15 V
20
V ± = ±10 V
10
V ± = ±5 V
0
100
1k
10 k
10 M
90
−2
100 k
1M
VICM - Common Mode Input Voltage Range - V
VIO- Input Offset Voltage - mV
2
1.5
0
1M
INPUT BIAS CURRENT
95
−3
−20
Vom - Output Voltage Swing - Vp-p
10 k 100 k
100
V ± = ±15 V
2.5
1k
f - Frequency - Hz
80
40
30
20
10
0
±10
±20
V ± - Supply Voltage - V
f - Frequency - Hz
Data Sheet G16051EJ3V0DS
5
µPC4741
OUTPUT VOLTAGE SWING
VO - Output Voltage - V
VOLTAGE FOLLOWER PULSE RESPONSE
20
V ± = ±15 V
RL = 2 kΩ
CL = 50 pF
−5
0
−5
5
VI - Input Voltage - V
Vom - Output Voltage Swing - Vp-p
30
10
0
100
300
1k
3k
10 k
0
−5
0
10
RL - Load Resistance - Ω
SUPPLY CURRENT
30
SUPPLY CURRENT
6
10
V ± = ±15 V
9
5
ICC - Supply Current - mA
ICC - Supply Current - mA
20
t - Time - µ s
4
3
2
8
7
6
5
4
3
2
1
1
0
±10
±5
±15
0
−20
±20
±
V - Supply Voltage - V
40
60
80
30
en - Input Equivalent Noise
Voltage Density - nV/ Hz
Channel Separation - dB
150
100
50
100
1k
10 k
100 k
20
10
0
10
100
1k
f - Frequency - Hz
f - Frequency - Hz
6
20
INPUT EQUIVALENT NOISE VOLTAGE DENSITY
CHANNEL SEPARATION
0
10
0
TA - Operating Ambient Temperature - ˚C
Data Sheet G16051EJ3V0DS
10 k
100 k
µPC4741
★ PACKAGE DRAWINGS (Unit: mm)
14-PIN PLASTIC DIP (7.62 mm (300))
14
8
1
7
A
K
J
L
I
C
H
G
B
M
R
F
D
N
M
NOTES
ITEM
1. Each lead centerline is located within 0.25 mm of
its true position (T.P.) at maximum material condition.
2. ltem "K" to center of leads when formed parallel.
A
MILLIMETERS
19.22±0.2
B
2.14 MAX.
C
2.54 (T.P.)
D
F
G
0.50±0.10
1.32±0.12
H
0.51 MIN.
3.6±0.3
I
3.55
J
K
4.3±0.2
7.62 (T.P.)
L
6.4±0.2
M
0.25 +0.10
−0.05
N
R
0.25
0~15°
P14C-100-300B1-3
Data Sheet G16051EJ3V0DS
7
µPC4741
14-PIN PLASTIC SOP (5.72 mm (225))
14
8
detail of lead end
P
1
7
A
H
F
J
I
G
S
C
D
B
L
N
S
K
M
M
E
NOTE
Each lead centerline is located within 0.1 mm of
its true position (T.P.) at maximum material condition.
ITEM
A
MILLIMETERS
10.2±0.26
B
1.42 MAX.
C
1.27 (T.P.)
D
0.42 +0.08
−0.07
E
0.1±0.1
F
1.59+0.21
−0.2
G
1.49
H
6.5±0.2
I
4.4±0.1
J
1.1±0.16
K
0.17 +0.08
−0.07
L
0.6±0.2
M
0.1
N
0.10
P
3° +7°
−3°
S14GM-50-225B, C-6
8
Data Sheet G16051EJ3V0DS
µPC4741
★ RECOMMENDED SOLDERING CONDITIONS
When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering
processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales
offices.
For more details, refer to below our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY
MANUAL"(C10535E).
Type of Surface Mount Device
µPC4741G2, 4741G2(5): 14-pin plastic SOP (5.72 mm (225))
Process
Infrared Ray Reflow
Conditions
Symbol
Peak temperature: 235°C or below (Package surface temperature),
IR35-00-3
Reflow time: 30 seconds or less (at 210°C or higher),
Maximum number of reflow processes: 3 time.
Vapor Phase Soldering
Peak temperature: 215°C or below (Package surface temperature),
VP15-00-3
Reflow time: 40 seconds or less (at 200°C or higher),
Maximum number of reflow processes: 3 time.
Wave Soldering
Solder temperature: 260°C or below, Flow time: 10 seconds or less,
WS60-00-1
Maximum number of flow processes: 1 time,
Pre-heating temperature: 120°C or below (Package surface temperature).
Partial Heating Method
Pin temperature: 300°C or below,
–
Heat time: 3 seconds or less (Per each side of the device).
Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the
device will be damaged by heat stress.
Type of Through-hole Device
µPC4741C, 4741C(5): 14-pin plastic DIP (7.62 mm (300))
Process
Conditions
Wave Soldering
Solder temperature: 260°C or below,
(only to leads)
Flow time: 10 seconds or less.
Partial Heating Method
Pin temperature: 300°C or below,
Heat time: 3 seconds or less (per each lead).
Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that
the package body does not get jet soldered.
Data Sheet G16051EJ3V0DS
9
µPC4741
[MEMO]
10
Data Sheet G16051EJ3V0DS
µPC4741
[MEMO]
Data Sheet G16051EJ3V0DS
11
µPC4741
• The information in this document is current as of February, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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redundancy, fire-containment, and anti-failure features.
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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M8E 00. 4