DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4741 HIGH PERFORMANCE QUAD OPERATIONAL AMPLIFIER DESCRIPTION The µPC4741 consists of four independent frequency compensated operational amplifiers featuring higher speed, broader band than general purpose type as 741. The µPC4741 is most appropriate for AC signal amplifier applications such as active filters or pulse amplifiers. FEATURES • Internal frequency compensation • Low noise • Output short circuit protection ORDERING INFORMATION Part Number Package µPC4741C µPC4741C(5) µPC4741G2 µPC4741G2(5) 14-pin plastic DIP (7.62 mm (300)) 14-pin plastic DIP (7.62 mm (300)) 14-pin plastic SOP (5.72 mm (225)) 14-pin plastic SOP (5.72 mm (225)) EQUIVALENT CIRCUIT (1/4 Circuit) µ PC4741C, 4741G2 + R1 OUT1 1 Q9 Q5 Q14 II1 2 Q12 II Q1 Q2 Q8 R5 Q10 IN C1 Q6 Q7 Q3 Q4 Q16 R4 R2 − + 4 + − R7 D1 Q15 12 IN4 V+ 4 11 V− II2 6 OUT Q13 Q11 13 II4 IN1 3 IN2 5 R6 R8 V 14 OUT4 1 10 IN3 − + 2 − + V PIN CONFIGURATION (Top View) 3 OUT2 7 9 II3 8 OUT3 D2 R3 – The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G16051EJ3V0DS00 (3rd edition) (Previous No. IC-1197) Date Published February 2002 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1987 µPC4741 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter + Voltage between V and V Symbol − Note1 V −V + Differential Input Voltage Input Voltage VID Note2 Output Voltage − C Power Dissipation Package Note4 G2 Package Output Short Circuit Duration Unit −0.3 to +40 V ±30 V − + − + V −0.3 to V +0.3 VI Note3 Ratings V VO V −0.3 to V +0.3 V PT 570 mW 550 mW 10 sec Note5 Note6 Operating Ambient Temperature TA −20 to +80 °C Storage Temperature Tstg −55 to +125 °C Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is –7.6 mW/°C when ambient temperature is higher than 50°C. 5. Thermal derating factor is –5.5 mW/°C when ambient temperature is higher than 25°C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage 2 Symbol MIN. V± ±4 Data Sheet G16051EJ3V0DS TYP. MAX. Unit ±16 V µPC4741 µPC4741C, 4741G2 ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±15 V) Parameter Input Offset Voltage Input Offset Current Input Bias Current Symbol TYP. MAX. Unit ±1.0 ±5.0 mV IIO ±30 ±50 nA IB 70 300 nA 210 mW VIO Note Note Conditions MIN. RS ≤ 100 Ω Large Signal Voltage Gain AV RL ≥ 2 kΩ , VO = ±10 V Power Consumption Pd IO = 0 A, All Amplifiers 25,000 50,000 150 Common Mode Rejection Ratio CMR Supply Voltage Rejection Ratio SVR Maximum Output Voltage Vom RL ≥ 10 kΩ ±12 ±13.7 V Maximum Output Voltage Vom RL ≥ 2 kΩ ±10 ±12.5 V Common Mode Input Voltage Range VICM ±12 ±14 V Slew Rate SR AV = 1 1.6 V/ µs Input Equivalent Noise Voltage Density en f = 1 kHz 9 nV/ Hz f = 10 kHz 108 dB Channel Separation 80 100 50 dB 100 µV/ V Note Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. µPC4741C (5), 4741G2 (5) ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±15 V) Parameter Input Offset Voltage Input Offset Current Input Bias Current Symbol VIO Note Note Conditions MIN. RS ≤ 100 Ω IIO TYP. MAX. Unit ±1.0 ±2.0 mV ±30 ±50 nA 100 nA 210 mW IB Large Signal Voltage Gain AV RL ≥ 2 kΩ , VO = ±10 V Power Consumption Pd IO = 0 A, All Amplifiers 28,000 50,000 150 Common Mode Rejection Ratio CMR Supply Voltage Rejection Ratio SVR Maximum Output Voltage Vom RL ≥ 10 kΩ ±12.5 ±13.7 V Maximum Output Voltage Vom RL ≥ 2 kΩ ±11 ±12.5 V Common Mode Input Voltage Range VICM ±13 ±14 V Slew Rate SR AV = 1 1.6 V/ µs Input Equivalent Noise Voltage Density en f = 1 kHz 9 nV/ Hz f = 10 kHz 108 dB Channel Separation 85 90 dB 50 µV/ V Note Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. Data Sheet G16051EJ3V0DS 3 µPC4741 MEASUREMENT CIRCUIT Fig.1 Channel Separation Measurement Circuit 50 kΩ − + 50 Ω VO2 Channel Separation VO2 = 20 log 1 1000 10 kΩ 10 kΩ − + 4 VO1 Data Sheet G16051EJ3V0DS VO1 µPC4741 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C, TYP.) POWER DISSIPATION OPEN LOOP FREQUENCY RESPONSE 600 120 AV - Open Loop Voltage Gain - dB PT - Total Power Dissipation - mW 800 µ PC4741C 132˚C/W µ PC4741G2 400 182˚C/W 200 V± = ±15 V RL = 2 kΩ CL = 50 pF 100 80 60 40 20 0 0 40 20 60 80 1 100 10 100 TA - Operating Ambient Temperature - ˚C INPUT OFFSET VOLTAGE 3 IB - Input Bias Current - nA 1 0.5 0 −0.5 −1 −1.5 V ± = ±15 V 85 80 75 70 65 60 −2.5 55 20 40 60 50 −20 80 0 20 40 60 TA - Operating Ambient Temperature - ˚C TA - Operating Ambient Temperature - ˚C LARGE SIGNAL FREQUENCY RESPONSE COMMON MODE INPUT VOLTAGE RANGE 30 V ± = ±15 V 20 V ± = ±10 V 10 V ± = ±5 V 0 100 1k 10 k 10 M 90 −2 100 k 1M VICM - Common Mode Input Voltage Range - V VIO- Input Offset Voltage - mV 2 1.5 0 1M INPUT BIAS CURRENT 95 −3 −20 Vom - Output Voltage Swing - Vp-p 10 k 100 k 100 V ± = ±15 V 2.5 1k f - Frequency - Hz 80 40 30 20 10 0 ±10 ±20 V ± - Supply Voltage - V f - Frequency - Hz Data Sheet G16051EJ3V0DS 5 µPC4741 OUTPUT VOLTAGE SWING VO - Output Voltage - V VOLTAGE FOLLOWER PULSE RESPONSE 20 V ± = ±15 V RL = 2 kΩ CL = 50 pF −5 0 −5 5 VI - Input Voltage - V Vom - Output Voltage Swing - Vp-p 30 10 0 100 300 1k 3k 10 k 0 −5 0 10 RL - Load Resistance - Ω SUPPLY CURRENT 30 SUPPLY CURRENT 6 10 V ± = ±15 V 9 5 ICC - Supply Current - mA ICC - Supply Current - mA 20 t - Time - µ s 4 3 2 8 7 6 5 4 3 2 1 1 0 ±10 ±5 ±15 0 −20 ±20 ± V - Supply Voltage - V 40 60 80 30 en - Input Equivalent Noise Voltage Density - nV/ Hz Channel Separation - dB 150 100 50 100 1k 10 k 100 k 20 10 0 10 100 1k f - Frequency - Hz f - Frequency - Hz 6 20 INPUT EQUIVALENT NOISE VOLTAGE DENSITY CHANNEL SEPARATION 0 10 0 TA - Operating Ambient Temperature - ˚C Data Sheet G16051EJ3V0DS 10 k 100 k µPC4741 ★ PACKAGE DRAWINGS (Unit: mm) 14-PIN PLASTIC DIP (7.62 mm (300)) 14 8 1 7 A K J L I C H G B M R F D N M NOTES ITEM 1. Each lead centerline is located within 0.25 mm of its true position (T.P.) at maximum material condition. 2. ltem "K" to center of leads when formed parallel. A MILLIMETERS 19.22±0.2 B 2.14 MAX. C 2.54 (T.P.) D F G 0.50±0.10 1.32±0.12 H 0.51 MIN. 3.6±0.3 I 3.55 J K 4.3±0.2 7.62 (T.P.) L 6.4±0.2 M 0.25 +0.10 −0.05 N R 0.25 0~15° P14C-100-300B1-3 Data Sheet G16051EJ3V0DS 7 µPC4741 14-PIN PLASTIC SOP (5.72 mm (225)) 14 8 detail of lead end P 1 7 A H F J I G S C D B L N S K M M E NOTE Each lead centerline is located within 0.1 mm of its true position (T.P.) at maximum material condition. ITEM A MILLIMETERS 10.2±0.26 B 1.42 MAX. C 1.27 (T.P.) D 0.42 +0.08 −0.07 E 0.1±0.1 F 1.59+0.21 −0.2 G 1.49 H 6.5±0.2 I 4.4±0.1 J 1.1±0.16 K 0.17 +0.08 −0.07 L 0.6±0.2 M 0.1 N 0.10 P 3° +7° −3° S14GM-50-225B, C-6 8 Data Sheet G16051EJ3V0DS µPC4741 ★ RECOMMENDED SOLDERING CONDITIONS When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to below our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL"(C10535E). Type of Surface Mount Device µPC4741G2, 4741G2(5): 14-pin plastic SOP (5.72 mm (225)) Process Infrared Ray Reflow Conditions Symbol Peak temperature: 235°C or below (Package surface temperature), IR35-00-3 Reflow time: 30 seconds or less (at 210°C or higher), Maximum number of reflow processes: 3 time. Vapor Phase Soldering Peak temperature: 215°C or below (Package surface temperature), VP15-00-3 Reflow time: 40 seconds or less (at 200°C or higher), Maximum number of reflow processes: 3 time. Wave Soldering Solder temperature: 260°C or below, Flow time: 10 seconds or less, WS60-00-1 Maximum number of flow processes: 1 time, Pre-heating temperature: 120°C or below (Package surface temperature). Partial Heating Method Pin temperature: 300°C or below, – Heat time: 3 seconds or less (Per each side of the device). Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the device will be damaged by heat stress. Type of Through-hole Device µPC4741C, 4741C(5): 14-pin plastic DIP (7.62 mm (300)) Process Conditions Wave Soldering Solder temperature: 260°C or below, (only to leads) Flow time: 10 seconds or less. Partial Heating Method Pin temperature: 300°C or below, Heat time: 3 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. Data Sheet G16051EJ3V0DS 9 µPC4741 [MEMO] 10 Data Sheet G16051EJ3V0DS µPC4741 [MEMO] Data Sheet G16051EJ3V0DS 11 µPC4741 • The information in this document is current as of February, 2002. The information is subject to change without notice. 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