DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3227TB 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3227TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES • Low current : ICC = 4.8 mA TYP. @ VCC = 5.0 V : PO (sat) = −1.0 dBm TYP. @ f = 1.0 GHz • Output power : PO (sat) = −3.5 dBm TYP. @ f = 2.2 GHz : PO (1dB) = −6.5 dBm TYP. @ f = 1.0 GHz • High linearity : PO (1dB) = −8.0 dBm TYP. @ f = 2.2 GHz • Power gain : GP = 22.0 dB TYP. @ f = 1.0 GHz : GP = 22.0 dB TYP. @ f = 2.2 GHz • Noise Figure : NF = 4.7 dB TYP. @ f = 1.0 GHz : NF = 4.6 dB TYP. @ f = 2.2 GHz • Supply voltage : VCC = 4.5 to 5.5 V • Port impedance : input/output 50 Ω APPLICATIONS • IF amplifiers in LNB for DBS converters etc. ORDERING INFORMATION Part Number µPC3227TB-E3 Order Number Package µPC3227TB-E3-A 6-pin super minimold (Pb-Free) Note Marking C3P Supplying Form Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: µPC3227TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10557EJ02V0DS (2nd edition) Date Published July 2005 CP(K) Printed in Japan NEC Compound Semiconductor Devices, Ltd. 2005 µPC3227TB PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) C3P 3 (Top View) 2 1 (Bottom View) 4 3 4 4 3 5 2 5 5 2 6 1 6 6 1 Pin No. Pin Name 1 INPUT 2 GND 3 GND 4 OUTPUT 5 GND 6 VCC PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC WIDEBAND AMPLIFIER (TA = +25°C, f = 1 GHz, VCC = 5.0 V, ZS = ZL = 50 Ω) fu PO (sat) GP NF ICC (GHz) (dBm) (dB) (dB) (mA) µPC2711TB 2.9 +1.0 13 5.0 12 µPC2712TB 2.6 +3.0 20 4.5 12 C1H µPC3215TB Note 2.9 +3.5 20.5 2.3 14 C3H µPC3224TB 3.2 +4.0 21.5 4.3 9.0 C3K µPC3227TB 3.2 −1.0 22 4.7 4.8 C3P Part No. Package 6-pin super minimold Note µPC3215TB is f = 1.5 GHz Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. 2 Data Sheet PU10557EJ02V0DS Marking C1G µPC3227TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage VCC TA = +25°C 6.0 V Total Circuit Current ICC TA = +25°C 15 mA Power Dissipation PD TA = +85°C 270 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin +10 dBm Note TA = +25°C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol Conditions MIN. TYP. MAX. Unit Supply Voltage VCC 4.5 5.0 5.5 V Operating Ambient Temperature TA −40 +25 +85 °C Data Sheet PU10557EJ02V0DS 3 µPC3227TB ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current ICC No input signal 4.0 4.8 6.0 mA Power Gain 1 GP1 f = 0.1 GHz, Pin = −40 dBm 20.5 22.5 24.5 dB Power Gain 2 GP2 f = 1.0 GHz, Pin = −40 dBm 19.5 22.0 24.5 Power Gain 3 GP3 f = 1.8 GHz, Pin = −40 dBm 19.0 22.0 25.0 Power Gain 4 GP4 f = 2.2 GHz, Pin = −40 dBm 19.0 22.0 25.0 Power Gain 5 GP5 f = 2.6 GHz, Pin = −40 dBm 19.0 22.0 25.0 Power Gain 6 GP6 f = 3.0 GHz, Pin = −40 dBm 18.0 21.0 24.5 Saturated Output Power 1 PO (sat) 1 f = 1.0 GHz, Pin = −12 dBm −3.5 −1.0 − Saturated Output Power 2 PO (sat) 2 f = 2.2 GHz, Pin = −12 dBm −6.0 −3.5 − Gain 1 dB Compression Output Power 1 PO (1 dB) 1 f = 1.0 GHz −9.0 −6.5 − Gain 1 dB Compression Output Power 2 PO (1 dB) 2 f = 2.2 GHz −11.0 −8.0 − Noise Figure 1 NF1 f = 1.0 GHz − 4.7 5.5 Noise Figure 2 NF2 f = 2.2 GHz − 4.6 5.5 Isolation 1 ISL1 f = 1.0 GHz, Pin = −40 dBm 35 40 − Isolation 2 ISL2 f = 2.2 GHz, Pin = −40 dBm 35 43 − Input Return Loss 1 RLin1 f = 1.0 GHz, Pin = −40 dBm 7.5 10.5 − Input Return Loss 2 RLin2 f = 2.2 GHz, Pin = −40 dBm 7.5 10.5 − Output Return Loss 1 RLout1 f = 1.0 GHz, Pin = −40 dBm 10.0 13.5 − Output Return Loss 2 RLout2 f = 2.2 GHz, Pin = −40 dBm 7.5 9.5 − Input 3rd Order Distortion IIP31 − −18.0 − − −20.5 − − +4.0 − − +1.5 − − 30.5 − dBc IIP32 OIP31 OIP32 dB dB dBm f1 = 2 200 MHz, f2 = 2 201 MHz, f1 = 1 000 MHz, f2 = 1 001 MHz, dBm f1 = 2 200 MHz, f2 = 2 201 MHz, Pin = −40 dBm Intercept Point 2 2nd Order Intermodulation Distortion dB Pin = −40 dBm Intercept Point 1 Output 3rd Order Distortion dB Pin = −40 dBm Intercept Point 2 Output 3rd Order Distortion dBm Pin = −40 dBm Intercept Point 1 Input 3rd Order Distortion f1 = 1 000 MHz, f2 = 1 001 MHz, dBm IM2 f1 = 1 000 MHz, f2 = 1 001 MHz, Pin = −40 dBm K factor 1 K1 f = 1.0 GHz − 3.8 − − K factor 2 K2 f = 2.2 GHz − 3.9 − − 4 Data Sheet PU10557EJ02V0DS µPC3227TB TEST CIRCUIT VCC C4 1 000 pF 1 000 pF C3 6 50 Ω IN C1 C2 4 1 50 Ω OUT 100 pF 100 pF 2, 3, 5 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type Value C1, C2 Chip Capacitor 100 pF C3 Chip Capacitor 1 000 pF C4 Feed-through Capacitor 1 000 pF CAPACITORS FOR VCC AND INPUT PINS Bypass capacitor for VCC pin is intended to minimize VCC pin’s ground impedance. Therefore, stable bias can be supplied against VCC fluctuation. Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC. Data Sheet PU10557EJ02V0DS 5 µPC3227TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD AMP-2 IN OUT C1 C2 C3 VCC C4 COMPONENT LIST Notes Value 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board. C1, C2 100 pF 2. Back side: GND pattern C3, C4 1 000 pF 3. Solder plated on pattern 4. : Through holes 6 Data Sheet PU10557EJ02V0DS µPC3227TB TYPICAL CHARACTERISTICS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω, unless otherwise specified) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 6 6.0 No Input Signal 5.5 Circuit Current ICC (mA) Circuit Current ICC (mA) 5 4 3 No Input Signal TA = +85°C 2 +25°C 1 5.0 4.5 4.0 3.5 –40°C 0 1 2 3 4 3.0 –60 6 5 Supply Voltage VCC (V) 20 0 40 POWER GAIN vs. FREQUENCY 80 100 ISOLATION vs. FREQUENCY 0 VCC = 5.5 V –10 Isolation ISL (dB) 25 20 15 5.0 V 4.5 V 10 –20 –30 VCC = 4.5 V –40 5 –50 0 0.1 –60 0.1 5.0 V 0.3 0.5 1.0 2.0 4.0 0.3 0.5 1.0 5.5 V 2.0 4.0 Frequency f (GHz) Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY 0 –5 0 VCC = 4.5 V Output Return Loss RLout (dB) Input Return Loss RLin (dB) 60 Operating Ambient Temperature TA (°C) 30 Power Gain GP (dB) –40 –20 –10 –15 5.0 V –20 5.5 V –25 –30 0.1 0.3 0.5 1.0 2.0 4.0 –5 VCC = 4.5 V –10 –15 5.5 V 5.0 V –20 –25 –30 0.1 Frequency f (GHz) 0.3 0.5 1.0 2.0 4.0 Frequency f (GHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10557EJ02V0DS 7 µPC3227TB OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER 0 +5 f = 1.0 GHz Output Power Pout (dBm) Output Power Pout (dBm) +5 VCC = 5.5 V –5 5.0 V 4.5 V –10 –15 –20 –40 –35 –30 –25 –20 –15 0 VCC = 5.5 V –5 5.0 V –10 4.5 V –15 –20 –40 –10 f = 2.2 GHz –35 –30 –25 –20 –15 –10 Input Power Pin (dBm) Input Power Pin (dBm) NOISE FIGURE vs. FREQUENCY NOISE FIGURE vs. FREQUENCY 6.0 6.0 5.5 5.5 Noise Figure NF (dB) Noise Figure NF (dB) TA = +85°C VCC = 4.5 V 5.0 4.5 4.0 5.5 V 5.0 V 4.5 4.0 500 1 000 1 500 2 000 2 500 3 000 3.0 0 –40°C 500 1 000 1 500 2 000 Frequency f (MHz) Frequency f (MHz) Remark The graphs indicate nominal characteristics. 8 +25°C 3.5 3.5 3.0 0 5.0 Data Sheet PU10557EJ02V0DS 2 500 3 000 OUTPUT POWER, IM3 vs. INPUT POWER +10 0 f1 = 1 000 MHz f2 = 1 001 MHz Pout –10 –20 –30 IM3 –40 –50 –60 –70 –80 –50 –40 –20 –30 –10 0 Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) µPC3227TB OUTPUT POWER, IM3 vs. INPUT POWER +10 0 f1 = 2 200 MHz f2 = 2 201 MHz Pout –10 –20 –30 IM3 –40 –50 –60 –70 –80 –50 –40 0 Pout IM2 –30 –40 –50 –60 –70 –80 –60 –50 –40 –30 –20 –10 0 2nd Order Intermodulation Distortion IM2 (dBc) Output Power Pout (dBm) 2nd Order Intemodulation Distortion IM2 (dBm) OUTPUT POWER, IM2 vs. INPUT POWER +10 –20 –20 –10 0 Input Power Pin (dBm) Input Power Pin (dBm) –10 –30 IM2 vs. INPUT POWER 50 40 30 20 10 0 –60 –50 –40 –30 –20 –10 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10557EJ02V0DS 9 µPC3227TB S-PARAMETERS (TA = +25°C, VCC = 5.0 V, Pin = −40 dBm) S11−FREQUENCY START : 100.000 000 MHz STOP : 5 100.000 000 MHz 1 2 1 : 1 000 MHz 91.02 Ω − 2.3789 Ω 2 : 2 200 MHz 82.914 Ω − 26.738 Ω S22−FREQUENCY START : 100.000 000 MHz STOP : 5 100.000 000 MHz 1 2 1 : 1 000 MHz 77.086 Ω 6.1797 Ω 2 : 2 200 MHz 92.535 Ω − 28.438 Ω 10 Data Sheet PU10557EJ02V0DS µPC3227TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 Data Sheet PU10557EJ02V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.1 MIN. 0.9±0.1 2.0±0.2 1.25±0.1 11 µPC3227TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC line. (4) The DC cut capacitor must be attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 WS260 Preheating temperature (package surface temperature) : 120°C or below Partial Heating Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Caution Do not use different soldering methods together (except for partial heating). 12 Data Sheet PU10557EJ02V0DS HS350 µPC3227TB When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. • The information in this document is current as of July, 2005. 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M8E 00. 4 - 0110 Data Sheet PU10557EJ02V0DS 13 µPC3227TB For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: [email protected] (sales and general) [email protected] (technical) Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: [email protected] (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0504