ETC UPD29F064115

µPD29F064115
64 Mb Flash Memory
Memory
Description
The 64 Mb µPD29F064115 flash memory with page-read function is optimized for ultralow-power mobile applications such as cellular telephones, personal digital assistants
(PDAs) and other portable terminals.
Specifications
Organization
4 Mwords x 16 bits
Sector architecture
142 sectors (4 Kwords x 16 sectors + 32 Kwords x 126 sectors)
Bank architecture
4 banks (8 Mb + 24 Mb + 24 Mb + 8 Mb)
Power supply
VCC = 1.95 ±0.15 V or 1.65 ±0.15 V; VCCQ = 3.0 ±0.3 V
Random access time
85 ns* / 90 ns / 100 ns; (*VCC = 1.95 ±0.15 V)
Page access time
30 ns
48-pin TSOP Type I (12 mm x 20 mm)
Package
63-ball tape FBGA (11 mm x 8 mm)
85-ball tape FBGA
Features
•
VCC =1.65 V minimum (1.8 ±0.15 V), one of the industry’s lowest operating voltages
• High-speed page read access time of 30 ns for better performance
• Dual operation with four bank architecture to enhance flexibility
•
Two 8 Mb banks with 4 Kwords x 8 boot sectors, combining conventional top- and
bottom-boot architectures in one product
µPD29F064115
64 Mb Flash Memory
Block Diagram
Block Diagram
The information in this document is current as of February 2002. The information is subject to change without notice. For actual design-in, refer to the latest
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© 2002/Printed in U.S.A.
Document No. M16004EU1V0PB00