DATA SHEET SILICON TRANSISTOR 2SA1897 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1897 features a low saturation voltage and is available PACKAGE DRAWING (UNIT: mm) for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed. FEATURES • High current capacitance • Low collector saturation voltage and high hFE • Insulation type package supportable for radial taping QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO −30 V Collector to emitter voltage VCEO −20 V Emitter to base voltage VEBO −10 V Collector current (DC) IC(DC) TC = 25°C −5.0 A Collector current (pulse) IC(pulse) PW ≤ 10 ms, duty cycle ≤ 50 % TC = 25°C −8.0 A IB(DC) −0.5 A Total power dissipation PT 1.0 W Total power dissipation PT 6.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Base current (DC) TC = 25°C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16145EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SA1897 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions TYP. MAX. Unit Collector cutoff current ICBO VCB = −20 V, IE = 0 1.0 µA Emitter cutoff current IEBO VEB = −8.0 V, IC = 0 1.0 µA DC current gain hFE1 VCE = −2.0 V, IC = −0.5 A 200 600 – DC current gain hFE2 VCE = −2.0 V, IC = −4.0 A 160 Collector saturation voltage VCE(sat) IC = −4.0 A, IB = −50 mA −230 −250 mV Base saturation voltage VBE(sat) IC = −4.0 A, IB = −50 mA −0.9 −1.2 V Gain bandwidth product fT VCE = –5.0 V, IE = 1.5 A 180 MHz – Output capacitance Cob VCB = –10 V, IE = 0, f = 1.0 MHz 220 pF Turn-on time ton 400 ns Storage time tstg IC = −5.0 A, VCC = −10 V IB1 = −IB1 = −125 mA, RL = 2.0 Ω, 300 ns 60 ns Fall time tf hFE CLASSIFICATION 2 MIN. Marking L K hFE1 200 to 400 300 to 600 Data Sheet D16145EJ1V0DS 2SA1897 TYPICAL CHARACTERISTICS (Ta = 25°°C) Data Sheet D16145EJ1V0DS 3 2SA1897 4 Data Sheet D16145EJ1V0DS 2SA1897 [MEMO] Data Sheet D16145EJ1V0DS 5 2SA1897 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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(Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4