DATA SHEET SILICON TRANSISTOR 2SD2463 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING (UNIT: mm) chip dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as motors, relays, and solenoids. FEATURES • Cost reduction available due to on-chip dumper diode (C to E) and zener diode ( C to B) • Low collector saturation voltage • Insulation type package supportable for radial taping QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO 31±4 V Collector to emitter voltage VCEO 31±4 V VEBO 8.0 V IC(DC) TC = 25°C ±2.0 A PW ≤ 10 ms, Duty cycle ≤ 50%, TC = 25°C ±3.0 A Emitter to base voltage Collector current (DC) Collector current (pulse) IC(pulse) Base current (DC) IB(DC) 0.2 A Total power dissipation PT 1.0 W Total power dissipation PT 6.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C TC = 25°C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16158EJ1V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SD2463 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions Collector cutoff current ICBO VCB = 20 V, IE = 0 DC current gain hFE1 VCE = 2.0 V, IC = 0.5 A 1000 DC current gain hFE2 VCE = 2.0 V, IC = 1.0 A 2000 Collector saturation voltage VCE(sat) IC = 1.0 A, IB = 1.0 mA Base saturation voltage VBE(sat) Turn-on time ton Storage time tstg Turn-off time tf TYP. MAX. Unit 10 µA − 30000 − 0.9 1.2 V IC = 1.0 A, IB = 1.0 mA 1.6 2.0 V IC = 1.0 A, VCC= 20 V IB1 = −IB2 = 0.5 mA RL = 20 Ω 0.5 µs 3.0 µs 1.0 µs hFE CLASSIFICATION 2 MIN. Marking M L K hFE2 2000 to 5000 4000 to 10000 8000 to 30000 Data Sheet D16158EJ1V0DS 2SD2463 TYPICAL CHARACTERISTICS (Ta = 25°°C) Data Sheet D16158EJ1V0DS 3 2SD2463 • The information in this document is current as of July, 2001. The information is subject to change without notice. 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(Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4