DATA SHEET SILICON TRANSISTORS 2SC4942 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC4942 is a transistor developed for high-speed high- PACKAGE DRAWING (UNIT: mm) voltage switching. This transistor is ideal for use in switching devices such as switching regulators and DC/DC converters. FEATURES • New package with dimensions in between those of small signal and power signal package • High voltage • Fast switching speed • Complementary transistor with the 2SA1871 QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Electrode connection Corporation to know the specification of quality grade on the 1. Emitter devices and its recommended applications. 2. Collector 3. Base ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO 600 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 7.0 V Collector current (DC) ID(DC) 1.0 A Collector current (pulse) ID(pulse) PW ≤ 10 ms, duty cycle ≤ 50 % 2.0 A 7.5 cm × 0.7 mm ceramic board mounted 2.0 W Total power dissipation PT 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16152EJ1V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC4942 (/(&75,&$/&+$5$&7(5,67,&67D °°& Parameter Symbol Conditions TYP. MAX. Unit Collector cutoff current ICBO VCB = 600 V, IE = 0 10 µA Emitter cutoff current IEBO VEB = 7.0 V, IC = 0 10 µA DC current gain hFE1 VCE = 5.0 V, IC = 0.1 A 30 55 120 − DC current gain hFE2 VCE = 5.0 V, IC = 0.5 A 5 10 − Collector saturation voltage VCE(sat) IC = 400 mV, IB = 80 mA 0.35 1.0 V Base saturation voltage VBE(sat) IC = 400 mV, IB = 80 mA 0.9 1.2 V Gain bandwidth product fT VCE = 5.0 V, IE = −50 mA 30 MHz pF Output capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz 15 Turn-on time tON 0.1 0.5 µs Storage time tstg IC = 0.5 A, VCC= 250 V IB1 = −IB2 = 0.1 A RL = 500 Ω 4.0 5.0 µs 0.2 0.5 µs Fall time tf K)(&/$66,),&$7,21 Marking AA1 AA2 AA3 hFE1 30 to 60 40 to 80 60 to 120 7<3,&$/&+$5$&7(5,67,&67D °°& MIN. 'DWD6KHHW'(-9'6 2SC4942 'DWD6KHHW'(-9'6 2SC4942 'DWD6KHHW'(-9'6 2SC4942 >0(02@ 'DWD6KHHW'(-9'6 2SC4942 • The information in this document is current as of July, 2001. The information is subject to change without notice. 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