MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SC1959 Features • • • • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA 1 Watt Amplifier applications Complementary to 2SA562TM. Pin Configuration Bottom View Power Silicon NPN Transistor TO-92 C B E A E Maximum Ratings Symbol V CEO V CBO V EBO IC IB PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Breakdown Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Operating Junction Temperature Storage Temperature B Rating 30 35 5.0 500 100 500 -55 to +150 -55 to +150 Unit V V V mA mA mW O C O C C Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Typ Max Units --- --- 0.1 uAdc --- --- 0.1 uAdc 400 --- ---- --- OFF CHARACTERISTICS ICBO IEBO Collector-Base Cutoff Current (VCB=35Vdc, IE =0) Emitter-Base Cutoff Current (VEB =5.0Vdc, IC=0) D ON CHARACTERISTICS hFE-1 DC Current Gain* 70 --(IC=100mAdc, V CE=1.0Vdc) hFE-2 DC Current Gain* 25 --(IC=400mAdc, V CE=6.0Vdc) V CE(sat) Collector-Emitter Saturation Voltage --0.1 (IC=100mAdc, IB =10mAdc) V BE Base-Emitter Voltage --0.8 (IC=100mAdc, V CE=1.0Vdc) fT Transition Frequency --300 (VCE=6.0Vdc, IC=20mAdc) COBO Collector Output Capacitance --- 7.0 (VCB=6.0Vdc, IE =0, f=1.0MH Z) Note: hFE(1) Classification O: 70~140, Y: 120~240, GR: 200~400 hFE(1) Classification O: 25 (Min.), Y: 40 (Min.) 0.25 G DIMENSIONS Vdc MM INCHES 1.0 Vdc --- M HZ --- pF DIM A B C D E G MIN .175 .175 .500 .016 .135 .095 www.mccsemi.com MAX .185 .185 --.020 .145 .105 MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE MCC 2SC1959 www.mccsemi.com