PRELIMINARY SFT10000/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR DESIGNER'S DATA SHEET APPLICATION NOTES: SFT10000 Darlington Transistor is direct replacement of Motorolla MJ 10000. It is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drives • Motor Controls • Deflection Cirsuits. MAXIMUM RATINGS TO-3 SYMBOL VALUE UNITS Collector-Emitter Voltage VCEO 350 Volts Collector-Emitter Voltage VCEV 450 Volts Emitter-Base Voltage V EB 8 Volts IC I CM 20 30 Amps IB 2.5 Amps 175 100 1 W W W/oC Collector Current Continuous Peak Base Current Total Device Dissipation @ TC = 25oC @ TC = 100oC PD Derate above 25oC Operating and Storage Temperature Thermal Resistance, Junction to Case TJ, TSTG -65 to +200 R 2JC 1 CASE OUTLINE: TO-3 Pin Out: 1 - Collector 2 - Base 3 - Emmiter NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0011A o o C C/W PRELIMINARY SFT10000/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS SYMBOL MIN MAX UNITS V CEO(sus) 350 - VDC VCEX(sus) 400 275 - VDC I CBO - 0.25 5.0 mADC Collector Cutoff Current (VCEV = Rated VCEV, RBE = 50S, TC = 100oC) ICEV - 5 mADC Emitter Cutoff Current (VEB = 8VDC, IC = 0) IEBO - 150 mADC HFE 50 40 600 400 - 1.9 3.0 2.0 Collector-Emitter Sustaining Voltage (IC = 250mA, IB = 0, VCLAMP = Rated VCEO) Collector-Emitter Sustaining Voltage (VCLAMP = Rated VCEX, TC = 100oC) Collector Cutoff Current (VCE = Rated Value, VBE(off) = 1.5VDC) DC Current Gain* (VCE = 5VDC) IC = 2 A IC = 10 A TC = 25oC TC = 100oC IC = 5ADC IC = 10ADC Collector-Emitter Saturation Voltage* IC = 10ADC, IB = 400mADC, TC = 25oC IC = 20ADC, IB = 1ADC, TC = 25oC IC = 10ADC, IB = 400mADC, TC = 100oC VCE(SAT) TC = 25oC TC = 100oC VBE (SAT) - 2.5 2.5 VDC Diode Forward Voltage (IF = 10ADC) VF - 5.0 VDC Small Signal Current Gain (IC = 1ADC , VCE = 10VDC, f = 1MHz) HFE 10 - Output Capacitance (VCB= 30VDC , IE = 0ADC, f = 2.0MHz) Cob 100 325 pf td - 0.2 :s tr - 0.6 :s ts - 3.5 :s tf - 2.4 :s t sv - 5.5 :s tc - 3.7 :s Base-Emitter Saturation Voltage* (IC = 10ADC, IB = 400mADC) Delay Time Rise Time Storage Time VCC = 250VDC , IC = 10ADC, IB1 = 400mADC, VBE(off) = 5VDC tP = 50:sec, Duty Cycle # 2% Fall Time Storage Time Crossover Time IC = 10A(pk), VCLAMP = Rated VCEX, IB1 = 400mA, VBE(off) = 5VDC, TC = 100oC *Pulse Test: Pulse Width = 300us, Duty Cycle = 2% VDC