MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A Collector-base Voltage 30V Operating and storage junction temperature range: -55OC to +150 OC Pin Configuration Bottom View 2SC2001 NPN Silicon Plastic-Encapsulate Transistor TO-92 E C B A E Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units 25 --- Vdc 30 --- Vdc 5.0 --- Adc --- 0.1 uAdc ---- 0.1 Vdc --- 0.1 uAdc B OFF CHARACTERISTICS V (BR)CEO V(BR)CBO V(BR)EBO I CBO ICEO IEBO Collector-Emitter Breakdown Voltage (I C=10mAdc, IB =0) Collector-Base Breakdown Voltage (I C=100uAdc, IE =0) Emitter-Base Breakdown Voltage (I E =100uAdc, IC=0) Collector Cutoff Current (VCB=30Vdc, IE =0) Collector Cutoff Current (V CE=20Vdc, IE =0) Emitter Cutoff Current (V EB =5.0Vdc, IC=0) C D ON CHARACTERISTICS hFE V CE(sat) V(BE)sat fT DC Current Gain (I C=100mAdc, V CE=1.0Vdc) Collector-Emitter Saturation Voltage (I C=700mAdc, IB =70mAdc) Base-Emitter Saturation Voltage (I C=700mAdc, IB =70mAdc) Transition Frequency (VCE=6.0Vdc, IC=10mAdc, f=30MHz) 90 400 --- --- 0.6 Vdc --- 1.2 Vdc 50 --- MHz G DIMENSIONS CLASSIFICATION OF HFE Rank Range M 90-180 L 135-270 K 200-400 DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 www.mccsemi.com MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE