ETC JANSF2N7424U

PD - 91447C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
IRHNA9064
JANSR2N7424U
60V, P-CHANNEL
REF: MIL-PRF-19500/655
®
™
RAD-Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHNA9064
100K Rads (Si)
IRHNA93064 300K Rads (Si)
RDS(on)
0.045Ω
0.045Ω
ID
-48A
-48A
QPL Part Number
JANSR2N7424U
JANSF2N7424U
International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for
space applications. This technology has over a decade of proven performance and reliability in satellite
applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of electrical parameters.
SMD-2
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Units
-48
-30
-192
300
2.4
±20
500
-48
30
-4.4
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5 Sec.)
3.3 (typical)
g
For footnotes refer to the last page
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1
02/18/03
IRHNA9064
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
-60
—
—
V
—
-0.055
—
V/°C
—
—
-2.0
18
—
—
—
—
—
—
—
—
0.045
0.048
-4.0
—
-25
-250
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
300
70
91
35
150
200
200
—
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Test Conditions
VGS = 0V, ID =-1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -30A➃
VGS = -12V, ID = -48A➃
VDS = VGS, ID = -1.0mA
VDS >-15V, IDS = -30A ➃
VDS= -48V ,VGS=0V
VDS = -48V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -48A
VDS = -30V
Ω
V
S( )
Ω
BVDSS
µA
nA
nC
VDD = -30V, ID = -48A,
VGS =-12V, RG = 2.35Ω
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
6700
2800
920
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
-48
-192
A
VSD
trr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.0
270
2.5
V
nS
µC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = -48A, VGS = 0V ➃
Tj = 25°C, IF = -48A, di/dt ≤ -100A/µs
VDD ≤ -50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
—
—
—
1.6
0.42 °C/W
—
Test Conditions
Soldered to a 1” square copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNA9064
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (SMD-2)
Diode Forward Voltage ➃
Units
300K Rads (Si)2
Test Conditions
Min
Max
Min
Max
-60
-2.0
—
—
—
—
—
-4.0
-100
100
-25
0.045
-60
-2.0
—
—
—
—
—
-5.0
-100
100
-25
0.045
µA
Ω
VGS = 0V, ID = -1.0mA
VGS = VDS , ID = -1.0mA
VGS = -20V
VGS = 20 V
VDS=-48V, VGS =0V
VGS = -12V, ID =-30A
—
0.045
—
0.045
Ω
VGS = -12V, ID =-30A
—
-3.0
—
- 3.0
V
VGS = 0V, IS = -48A
V
nA
1. Part number IRHNA9064 (JANSR2N7424U)
2. Part number IRHNA93064 (JANSF2N7424U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LE T
MeV/(mg/cm²))
Energy
(MeV)
VD S(V)
Range
(µm)
@VGS=0V
@VGS=5V
@VGS=10V
@VGS=15V
@VGS=20V
Cu
28
285
43
-60
-60
-50
-35
—
Br
36.8
305
39
-55
-45
-35
-30
—
I
59.9
345
32.8
-40
-35
—
—
—
-80
-60
VDS
Cu
Br
-40
I
-20
0
0
5
10
15
20
25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA9064
Pre-Irradiation
1000
1000
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
100
100
-5.0V
20µs PULSE WIDTH
T = 25 C
1
-5.0V
10
3.5
TJ = 150 ° C
V DS = -25V
20µs PULSE WIDTH
6
7
8
9
10
11
Fig 3. Typical Transfer Characteristics
12
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
TJ = 25 ° C
-VGS, Gate-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
1000
5
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
°
J
10
0.1
100
-VDS , Drain-to-Source Voltage (V)
100
20µs PULSE WIDTH
T = 150 C
°
J
10
0.1
4
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
ID = -48A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs.Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
8000
Ciss
6000
Coss
4000
2000
C
rss
20
-VGS , Gate-to-Source Voltage (V)
12000
C, Capacitance (pF)
IRHNA9064
0
1
10
ID = -48A
VDS = -48V
VDS = -30V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
-VDS , Drain-to-Source Voltage (V)
50
100
150
200
250
300
350
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
100
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
DS(on)
TJ = 25 ° C
10
V GS = 0 V
1
0.0
1.0
2.0
3.0
4.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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100us
100
TJ = 150 ° C
5.0
1ms
10ms
10
1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNA9064
Pre-Irradiation
50
VGS
40
-ID , Drain Current (A)
RD
VDS
D.U.T.
RG
-
+
30
V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
td(on)
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.1
0.01
0.001
0.00001
0.20
0.10
0.05
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNA9064
L
VDS
A
IA S
tp
VD D
D R IV E R
EAS , Single Pulse Avalanche Energy (mJ)
D .U .T
RG
-2
V
V0GS
1400
TOP
1200
BOTTOM
1000
0 .0 1 Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
ID
-21A
-30A
-48A
800
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-12V
12V
.2µF
.3µF
-12V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNA9064
Pre-Irradiation
Foot Notes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = -25V, starting TJ = 25°C, L=0.43mH
Peak I L = -48A, VGS =-12V
➂ ISD ≤ -48A, di/dt ≤ -150A/µs,
VDD ≤ -60V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
-48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 02/03
8
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