IRF IRHNA3Z60

PD - 91708B
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-2)
IRHNA7Z60
30V, N-CHANNEL
®
™
RAD-Hard HEXFET TECHNOLOGY
Product Summary
Part Number
IRHNA7Z60
IRHNA3Z60
IRHNA4Z60
IRHNA8Z60
Radiation Level
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
RDS(on)
0.009Ω
0.009Ω
0.009Ω
0.009Ω
ID
75*A
75*A
75*A
75*A
SMD-2
HEXFET®
International Rectifier’s RADHard
technology provides high performance power MOSFETs for
space applications. This technology has over a decade of proven performance and reliability in satellite
applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Units
75*
75*
300
300
2.4
±20
500
75
30
0.35
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 ( for 5 sec.)
3.3 (Typical )
C
g
For footnotes refer to the last page
*Current is limited by internal wire diameter
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1
12/18/01
IRHNA7Z60
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
30
—
—
V
—
0.023
—
V/°C
—
—
0.009
Ω
2.0
31
—
—
—
—
—
—
4.0
—
25
250
V
S( )
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 75A ➃
nC
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 75A ➃
VDS= 24V ,VGS=0V
VDS = 24V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 75A
VDS = 15V
ns
VDD =15V, ID = 75A
VGS =12V, RG = 2.35Ω
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
421
104
74
32
370
150
280
—
C iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
7000
4800
1800
—
—
—
nA
nH
pF
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
75*
300
1.8
245
1.1
Test Conditions
A
V
nS
µC
Tj = 25°C, IS = 75A, VGS = 0V ➃
Tj = 25°C, IF = 75A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
*Current is limited by the internal wire diameter
Thermal Resistance
Parameter
R thJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
—
—
—
1.6
0.42
—
°C/W
Test Conditions
Soldered to a 1” sq. copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation
Characteristics
Pre-Irradiation
IRHNA7Z60
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)1
Min
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (SMD-2)
Diode Forward Voltage ➃
300 - 1000K Rads (Si)2
Test Conditions
Units
Max
Min
Max
30
2.0
—
—
—
—
—
4.0
100
-100
25
0.009
30
1.25
—
—
—
—
—
4.5
100
-100
50
0.03
µA
Ω
VGS = 12V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=24V, VGS =0V
VGS = 12V, ID =15A
—
0.009
—
0.03
Ω
VGS = 12V, ID =15A
—
1.8
—
1.8
V
VGS = 0V, IS = 75A
V
nA
1. Part number IRHNA7Z60
2. Part numbers IRHNA3Z60, IRHNA4Z60 and IRHNA8Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
MeV/(mg/cm²))
Energy
(MeV)
VDS(V)
Range
(µm)
@VGS=0V
@VGS=-5V
@VGS=-10V
@VGS=-15V
@VGS=-20V
Br
36.8
305
39
30
30
30
25
20
I
59.9
345
32.8
25
25
20
15
10
AU
80.3
313
26.5
22.5
22.5
15
10
_
35
30
VDS
25
Br
I
AU
20
15
10
5
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA7Z60
1000
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
100
5.0V
20µs PULSE WIDTH
T = 25 C
1
5.0V
10
100
TJ = 25 ° C
TJ = 150 ° C
V DS = 50V
20µs PULSE WIDTH
7
8
9
10
11
12
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
6
10
100
Fig 2. Typical Output Characteristics
1000
5
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
°
J
10
0.1
VDS , Drain-to-Source Voltage (V)
100
20µs PULSE WIDTH
T = 150 C
°
J
10
0.1
4
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
TOP
ID = 75A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
12000
C, Capacitance (pF)
VGS =
Ciss =
Crss =
C
oss Coss =
Ciss
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
9000
6000
Crss
3000
20
VGS , Gate-to-Source Voltage (V)
15000
IRHNA7Z60
ID = 75A
VDS = 24V
VDS = 15V
16
12
8
4
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
100
VDS , Drain-to-Source Voltage (V)
300
400
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
TJ = 25 ° C
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
200
QG , Total Gate Charge (nC)
TJ = 150 ° C
100
100us
100
10
1
0.0
V GS = 0 V
1.0
2.0
3.0
4.0
5.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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6.0
1ms
10
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
10ms
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNA7Z60
Pre-Irradiation
RD
160
VDS
LIMITED BY PACKAGE
VGS
I D , Drain Current (A)
D.U.T.
RG
120
+
-VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
80
Fig 10a. Switching Time Test Circuit
40
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.1
0.01
0.001
0.00001
0.20
0.10
0.05
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNA7Z60
1 5V
EAS , Single Pulse Avalanche Energy (mJ)
1500
TOP
1200
D R IV E R
L
VD S
D .U .T
RG
+
- VD D
IA S
VGS
20V
tp
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
BOTTOM
ID
34A
47A
75A
900
600
300
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNA7Z60
Pre-Irradiation
Foot Notes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 25V, starting TJ = 25°C, L=0.17mH
Peak IL = 75A, VGS =12V
➂ ISD ≤ 75A, di/dt ≤ 94A/µs,
VDD ≤ 30V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
24 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/01
8
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