MICROCIRCUIT DATA SHEET Original Creation Date: 07/22/99 Last Update Date: 10/18/99 Last Major Revision Date: 09/10/99 MJCD4049A-X REV 1A0 INVERTING HEX BUFFER General Description This hex buffer is a monolithic complementary MOS (CMOS) integrated circuit constructed with N- and P- channel enhancement mode transistors. This device features logic level conversion using only one supply voltage (VDD). The input signal high level (VIH) can exceed the VDD supply voltage when the device is used for logic conversion. The device is intended for use as a hex buffer, CMOS to DTL/TTL converter or as a CMOS current driver, and at VDD = 5.0V, it can drive two DTL/TTL loads over the full operating temperature range. Industry Part Number NS Part Numbers CD4049A JM4049ABEA JM4049ABFA Prime Die CD4049A Controlling Document 38510/05503, amend. #3 Processing Subgrp Description MIL-STD-883, Method 5004 1 2 3 4 5 6 7 8A 8B 9 10 11 Quality Conformance Inspection MIL-STD-883, Method 5005 1 Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at Temp ( oC) +25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55 MICROCIRCUIT DATA SHEET MJCD4049A-X REV 1A0 (Absolute Maximum Ratings) (Note 1, 2) Voltage at Any Pin -0.5V to Vdd +0.5V Power Dissipation (Pd) 200mW Vdd Range -0.5V to +15.5V Storage Temperature (Ts) -65C to +150C Lead Temperature (Soldering, 10 seconds) Input Current (each input) 300C + 10mA Thermal Resistance, junction to case See MIL-STD-1835 Maximum Junction Temperature (Tj max) 175C Note 1: Note 2: "Absolute Maximum Ratings" are those values beyond which the safety of the device cannot be guaranteed. Except for "Operating Temperature Range" they are not meant to imply that the device should be operated at these limits. The table of "Electrical Characteristics" provides conditions for actual device operation. All voltages measured with respect to Vss unless otherwise specified. Recommended Operating Conditions Supply Voltage (VDD) 4.5V to 12.5V Operating Temperature Range -55C to +125C Input Low Voltage Range (VIL) VDD=5.0V VDD=12.5V Input High Voltage Range (VIH) VDD=5.0V VDD=12.5V 0V to 0.85V 0V to 2.1V 3.95V to 5.0V 10.0V to 12.5V 2 MICROCIRCUIT DATA SHEET MJCD4049A-X REV 1A0 Electrical Characteristics DC PARAMETERS SYMBOL PARAMETER CONDITIONS NOTES PINNAME MIN MAX UNIT SUBGROUPS Vic- Input Clamping Voltage (negative) VDD=0.0V, VSS=Gnd, IIN=-1mA (other inputs open) 5, 6 INPUTS -6.0 V 1 IIH Input High Current VDD=15.0V, VIN=15.0V (each input measured separately) 3, 4 INPUTS 100.0 nA 1, 2 IIL Input Low Current VDD=15.0V, VIN=0.0V (each input measured separately) 3, 4 INPUTS -100.0 nA 1, 2 ISS Power Supply Current VDD=15.0V, VIN=15.0V or VIN=0.0V, VM=0.0V 3, 4 VSS -75.0 nA 1 3, 4 VSS -750.0 nA 2 VOH1 VOH2 VOH3 VOH4 VOL1 VOL2 VOL3 VOL4 Output High Voltage Output High Voltage Output High Voltage Output High Voltage Output Low Voltage Output Low Voltage Output Low Voltage Output Low Voltage VDD=4.5V, VIL=0.9V, IOH=-0.10mA 1, 2 OUTPUTS 2.5 V 1 VDD=4.5V, VIL=0.65V, IOH=-0.10mA 1, 2 OUTPUTS 2.5 V 2 VDD=4.5V, VIL=0.95V, IOH=-0.10mA 1, 2 OUTPUTS 2.5 V 3 VDD=5.0V, VIL=0.9V, IOH=-0.45mA 1, 2 OUTPUTS 4.5 V 1 VDD=5.0V, VIL=0.65V, IOH=-0.35mA 1, 2 OUTPUTS 4.5 V 2 VDD=5.0V, VIL=0.95V, IOH=-0.65mA 1, 2 OUTPUTS 4.5 V 3 VDD=5.0V, VIL=0.9V, IOH=-0.0mA 1, 2 OUTPUTS 4.95 V 1 VDD=5.0V, VIL=0.65V, IOH=-0.0mA 1, 2 OUTPUTS 4.95 V 2 VDD=5.0V, VIL=0.95V, IOH=-0.0mA 1, 2 OUTPUTS 4.95 V 3 VDD=12.5V, VIL=2.15V, IOH=-0.0mA 1, 2 OUTPUTS 11.25 V 1 VDD=12.5V, VIL=1.95V, IOH=-0.0mA 1, 2 OUTPUTS 11.25 V 2 VDD=12.5V, VIL=2.24V, IOH=-0.0mA 1, 2 OUTPUTS 11.25 V 3 VDD=5.5V, VIH=3.95V, IOL=0.23mA 1, 2 OUTPUTS 0.5 V 1 VDD=5.5V, VIH=3.85V, IOL=0.23mA 1, 2 OUTPUTS 0.5 V 2 VDD=5.5V, VIH=4.05V, IOL=0.23mA 1, 2 OUTPUTS 0.5 V 3 VDD=5.0V, VIH=3.95V, IOL=3.0mA 1, 2 OUTPUTS 0.5 V 1 VDD=5.0V, VIH=3.85V, IOL=2.10mA 1, 2 OUTPUTS 0.5 V 2 VDD=5.0V, VIH=4.05V, IOL=3.70mA 1, 2 OUTPUTS 0.5 V 3 VDD=5.0V, VIH=3.95V, IOL=0.0mA 1, 2 OUTPUTS 0.05 V 1 VDD=5.0V, VIH=3.85V, IOL=0.0mA 1, 2 OUTPUTS 0.05 V 2 VDD=5.0V, VIH=4.05V, IOL=0.0mA 1, 2 OUTPUTS 0.05 V 3 VDD=12.5V, VIH=10.25V, IOL=0.0mA 1, 2 OUTPUTS 1.25 V 1 VDD=12.5V, VIH=10.00V, IOL=0.0mA 1, 2 OUTPUTS 1.25 V 2 VDD=12.5V, VIH=10.50V, IOL=0.0mA 1, 2 OUTPUTS 1.25 V 3 3 MICROCIRCUIT DATA SHEET MJCD4049A-X REV 1A0 Electrical Characteristics AC PARAMETERS (The following conditions apply to all the following parameters, unless otherwise specified.) AC: VDD=5.0V, CL=50pF, RL=200K Ohms to ground, Tr/Tf=10nS + 2nS SYMBOL tpHL tpLH tTHL tTLH Cin PARAMETER CONDITIONS NOTES Propagation Delay Time Propagation Delay Time Transition Time Transition Time Input Capacitance VDD=Gnd, f=1MHz PINNAME MIN MAX UNIT SUBGROUPS 7, 8 In to On 6 150 nS 9, 11 7, 8 In to On 9 225 nS 10 7, 8 In to On 6 230 nS 9, 11 7, 8 In to On 9 345 nS 10 7, 8 On 6 70 nS 9, 11 7, 8 On 9 105 nS 10 7, 8 On 6 270 nS 9, 11 7, 8 On 9 405 nS 10 20 pF 4 10 INPUTS DC PARAMETERS: DRIFT VALUES (The following conditions apply to all the following parameters, unless otherwise specified.) DC: Delta calculations performed at production burn-in and Group C (operational life test). ISS Power Supply Current VDD=15.0V, VIN=15.0V or VIN=0.0V, VM=0.0V 12 VSS -20.0 20.0 nA 1 VOL1 Output Low Voltage VDD=5.5V, VIH=3.95V, IOL=0.23ma 12 OUTPUTS -0.04 0.04 V 1 VOH1 Output High Voltage VDD=4.5V, VIL=0.9V, IOH=-0.10ma 12 OUTPUTS -0.08 0.08 V 1 Note 1: Screen tested 100% on each device at +25C, +125C and -55C temperature, subgroups A1, 2 and 3. Note 2: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C, +125C and -55C temperature, subgroups A1, 2 and 3. Note 3: Screen tested 100% on each device at +25C and +125C temperature only, subgroup A1 and 2. Note 4: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C and +125C temperature only, subgroup A1 and 2. Note 5: Screen tested 100% on each device at +25C temperature only, subgroup A1. Note 6: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C temperature only, subgroup A1. Note 7: Screen tested 100% on each device at +25C temperature only, subgroup A9. Note 8: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C, +125C and -55C temperature, subgroups A9, 10 and 11. Note 9: VIL, VIH, IOL and IOH are guaranteed by applying specified conditions and testing VOL and VOH. Note 10: Guaranteed parameter. This test is only performed during qualification. Note 11: Guaranteed parameter, not tested. Note 12: Drift values need not be calculated if post burn-in electrical test is performed within 24 hours after burn-in. 4 MICROCIRCUIT DATA SHEET MJCD4049A-X REV 1A0 Revision History Rev ECN # 1A0 M0003567 10/18/99 Rel Date Originator Changes Donald B. Miller 1) Archive JRETS4049MX, Rev. 1A, release to MDS MJCD4049A-X, Rev. 1A0. 2) Change IIH room limit from 1nA to 100nA. Change IIH 125C limit from 45nA to 100nA. 3) Change IIL room limit from -1nA to -100nA. Change IIL 125C limit from -45nA to -100nA. 5