ETC MUN5111DW1T1/D

MUN5111DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5111DW1T1 series,
two BRT devices are housed in the SOT–363 package which is ideal
for low–power surface mount applications where board space is at a
premium.
•
•
•
•
http://onsemi.com
(3)
(2)
R1
Q2
R2
R1
(5)
5
4
1
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Symbol
Value
Unit
Collector-Base Voltage
VCBO
–50
Vdc
Collector-Emitter Voltage
VCEO
–50
Vdc
IC
–100
mAdc
Symbol
Max
Unit
PD
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW
Collector Current
(6)
6
MAXIMUM RATINGS
Rating
R2
Q1
(4)
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
(1)
2
3
SOT–363
CASE 419B
STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
xx
mW/°C
xx
= Device Marking
= (See Page 2)
RθJA
670 (Note 1.)
490 (Note 2.)
°C/W
Symbol
Max
Unit
PD
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
DEVICE MARKING INFORMATION
mW/°C
See specific marking information in the device marking table
on page 2 of this data sheet.
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
RθJA
493 (Note 1.)
325 (Note 2.)
°C/W
Thermal Resistance –
Junction-to-Lead
RθJL
188 (Note 1.)
208 (Note 2.)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
–55 to +150
°C
Preferred devices are recommended choices for future use
and best overall value.
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
 Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 3
1
Publication Order Number:
MUN5111DW1T1/D
MUN5111DW1T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MUN5111DW1T1
SOT–363
0A
10
10
3000/Tape & Reel
MUN5112DW1T1
SOT–363
0B
22
22
3000/Tape & Reel
MUN5113DW1T1
SOT–363
0C
47
47
3000/Tape & Reel
MUN5114DW1T1
SOT–363
0D
10
47
3000/Tape & Reel
MUN5115DW1T1 (Note 3.)
SOT–363
0E
10
∞
3000/Tape & Reel
MUN5116DW1T1 (Note 3.)
SOT–363
0F
4.7
∞
3000/Tape & Reel
MUN5130DW1T1 (Note 3.)
SOT–363
0G
1.0
1.0
3000/Tape & Reel
MUN5131DW1T1 (Note 3.)
SOT–363
0H
2.2
2.2
3000/Tape & Reel
MUN5132DW1T1 (Note 3.)
SOT–363
0J
4.7
4.7
3000/Tape & Reel
MUN5133DW1T1 (Note 3.)
SOT–363
0K
4.7
47
3000/Tape & Reel
MUN5134DW1T1 (Note 3.)
SOT–363
0L
22
47
3000/Tape & Reel
MUN5135DW1T1 (Note 3.)
SOT–363
0M
2.2
47
3000/Tape & Reel
MUN5136DW1T1 (Note 3.)
SOT–363
0N
100
100
3000/Tape & Reel
MUN5137DW1T1 (Note 3.)
SOT–363
0P
47
22
3000/Tape & Reel
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = –50 V, IE = 0)
ICBO
–
–
–100
nAdc
Collector-Emitter Cutoff Current (VCE = –50 V, IB = 0)
ICEO
–
–
–500
nAdc
Emitter-Base Cutoff Current
(VEB = –6.0 V, IC = 0)
IEBO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–0.5
–0.2
–0.1
–0.2
–0.9
–1.9
–4.3
–2.3
–1.5
–0.18
–0.13
–0.2
–0.05
–0.13
mAdc
Collector-Base Breakdown Voltage (IC = –10 µA, IE = 0)
V(BR)CBO
–50
–
–
Vdc
Collector-Emitter Breakdown Voltage (Note 4.) (IC = –2.0 mA, IB = 0)
V(BR)CEO
–50
–
–
Vdc
VCE(sat)
–
–
–0.25
Vdc
OFF CHARACTERISTICS
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
ON CHARACTERISTICS (Note 4.)
Collector-Emitter Saturation Voltage (IC = –10 mA, IE = –0.3 mA)
(IC = –10 mA, IB = –5 mA) MUN5130DW1T1/MUN5131DW1T1
(IC = –10 mA, IB = –1 mA) MUN5115DW1T1/MUN5116DW1T1
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
http://onsemi.com
2
MUN5111DW1T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
130
140
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
VOH
–4.9
–
–
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
kΩ
0.8
0.17
–
0.8
0.055
0.38
0.038
1.7
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
ON CHARACTERISTICS (Note 5.) (Continued)
DC Current Gain
(VCE = –10 V, IC = –5.0 mA)
Output Voltage (on)
(VCC = –5.0 V, VB = –2.5 V, RL = 1.0 kΩ)
(VCC = –5.0 V, VB = –3.5 V, RL = 1.0 kΩ)
(VCC = –5.0 V, VB = –5.5 V, RL = 1.0 kΩ)
(VCC = –5.0 V, VB = –4.0 V, RL = 1.0 kΩ)
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
VOL
MUN5111DW1T1
MUN5112DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5113DW1T1
MUN5136DW1T1
MUN5137DW1T1
Output Voltage (off) (VCC = –5.0 V, VB = –0.5 V, RL = 1.0 kΩ)
(VCC = –5.0 V, VB = –0.05 V, RL = 1.0 kΩ) MUN5130DW1T1
(VCC = –5.0 V, VB = –0.25 V, RL = 1.0 kΩ) MUN5115DW1T1
MUN5116DW1T1
MUN5131DW1T1
MUN5133DW1T1
Input Resistor
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
Resistor Ratio MUN5111DW1T1/MUN5112DW1T1/
MUN5113DW1T1/MUN5136DW1T1
MUN5114DW1T1
MUN5115DW1T1/MUN5116DW1T1
MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5137DW1T1
R1/R2
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
http://onsemi.com
3
Vdc
MUN5111DW1T1 Series
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
–50
RθJA = 490°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
http://onsemi.com
4
150
MUN5111DW1T1 Series
1000
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111DW1T1
TA=-25°C
0.1
25°C
75°C
0.01
0
20
25°C
100
10
-25°C
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
50
1
100
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
100
TA=-25°C
1
0.1
0.01
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0
10
8
9
Figure 5. Output Current versus Input Voltage
10
0.1
100
25°C
75°C
10
0.001
50
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TA=75°C
IC, COLLECTOR CURRENT (mA)
40
4
0
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
http://onsemi.com
5
50
10
MUN5111DW1T1 Series
1000
10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112DW1T1
IC/IB = 10
1
25°C
TA=-25°C
75°C
0.1
0.01
0
40
20
IC, COLLECTOR CURRENT (mA)
TA=75°C
10
1
Figure 8. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
3
2
1
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=-25°C
10
1
0.1
0.01
0.001
50
Figure 9. Output Capacitance
100
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
0
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
10
25°C
75°C
1
0
10
8
9
Figure 10. Output Current versus Input Voltage
TA=-25°C
0.1
100
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
0
25°C
-25°C
100
10
50
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
http://onsemi.com
6
10
MUN5111DW1T1 Series
1
1000
IC/IB = 10
TA=-25°C
25°C
75°C
0.1
0.01
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5113DW1T1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
IC, COLLECTOR CURRENT (mA)
0.6
0.4
0.2
0
0
-25°C
1
0.1
0.01
Figure 14. Output Capacitance
VO = 5 V
1
0
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 15. Output Current versus Input Voltage
100
10
25°C
TA=75°C
10
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
100
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 16. Input Voltage versus Output Current
http://onsemi.com
7
50
10
MUN5111DW1T1 Series
1
180
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5114DW1T1
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
140
-25°C
120
100
80
60
40
20
0
80
TA=75°C
VCE = 10 V
160
2
1
4
6
Figure 17. VCE(sat) versus IC
100
TA=75°C
3.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
10
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
25°C
TA=-25°C
75°C
1
0
10
8
10
Figure 20. Output Current versus Input Voltage
10
0.1
25°C
-25°C
1
50
Figure 19. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
80 90 100
Figure 18. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
http://onsemi.com
8
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5115DW1T1
HFE, DC CURRENT GAIN (NORMALIZED)
1000
TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 22. DC Current Gain
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5116DW1T1
HFE, DC CURRENT GAIN (NORMALIZED)
1000
TA = 25°C
VCE = 10 V
VCE = 5.0 V
100
1.0
10
IC, COLLECTOR CURRENT (mA)
Figure 23. DC Current Gain
http://onsemi.com
9
100
MUN5111DW1T1 Series
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
0.1
75°C
25°C
–25°C
IC/IB = 10
0.01
0
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
7
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136DW1T1
1000
75°C
TA = –25°C
100
25°C
10
VCE = 10 V
1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 24. Maximum Collector Voltage versus
Collector Current
Figure 25. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
1.0
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
25°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = –25°C
1
VO = 5 V
0
1
2
3
4
TA = –25°C
10
VO = 0.2 V
75°C
0
2
6
7
8
9
10
Figure 27. Output Current versus Input Voltage
100
1
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 26. Output Capacitance
25°C
75°C
10
0.1
0
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.2
0
100
4
6
8
10 12
14
16
IC, COLLECTOR CURRENT (mA)
18
Figure 28. Input Voltage versus Output Current
http://onsemi.com
10
20
MUN5111DW1T1 Series
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137DW1T1
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
TA = –25°C
75°C
0.1
25°C
IC/IB = 10
0.01
0
5
10 15
20 25 30 35 40
IC, COLLECTOR CURRENT (mA)
45
50
1000
75°C
TA = –25°C
100
25°C
VCE = 10 V
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 29. Maximum Collector Voltage versus
Collector Current
Figure 30. DC Current Gain
100
1.2
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
1.0
0.8
0.6
0.4
0.2
75°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = –25°C
10
25°C
1
0.1
0.01
0.001
0
VO = 5 V
0
1
2
3
4
VO = 0.2 V
1
TA = –25°C
75°C
25°C
0
6
7
8
9
10
11
Figure 32. Output Current versus Input Voltage
100
10
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 31. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.4
0
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
25
Figure 33. Input Voltage versus Output Current
http://onsemi.com
11
MUN5111DW1T1 Series
INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–363
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
0.65 mm 0.65 mm
0.4 mm (min)
0.5 mm (min)
1.9 mm
SOT–363 POWER DISSIPATION
one can calculate the power dissipation of the device which
in this case is 256 milliwatts.
The power dissipation of the SOT–363 is a function of
the pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient; and the operating
temperature, TA. Using the values provided on the data
sheet, PD can be calculated as follows:
PD =
PD =
150°C – 25°C
= 256 milliwatts
490°C/W
The 490°C/W for the SOT–363 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 256
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–363 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
SOLDERING PRECAUTIONS
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
http://onsemi.com
12
MUN5111DW1T1 Series
SOLDER STENCIL GUIDELINES
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
TYPICAL SOLDER HEATING PROFILE
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 34 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
STEP 1
PREHEAT
ZONE 1
RAMP"
200°C
150°C
STEP 2
STEP 3
VENT
HEATING
SOAK" ZONES 2 & 5
RAMP"
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
STEP 5
STEP 4
HEATING
HEATING
ZONES 3 & 6 ZONES 4 & 7
SPIKE"
SOAK"
205° TO 219°C
PEAK AT
SOLDER JOINT
170°C
160°C
150°C
140°C
100°C
100°C
50°C
STEP 6 STEP 7
VENT COOLING
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TMAX
TIME (3 TO 7 MINUTES TOTAL)
Figure 34. Typical Solder Heating Profile
http://onsemi.com
13
MUN5111DW1T1 Series
PACKAGE DIMENSIONS
SOT–363
CASE 419B–01
ISSUE G
A
G
V
6
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
–B–
S
1
2
DIM
A
B
C
D
G
H
J
K
N
S
V
3
D 6 PL
0.2 (0.008)
M
B
M
N
J
C
H
K
http://onsemi.com
14
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
--0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
0.012
0.016
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
EMITTER 2
BASE 2
COLLECTOR 1
EMITTER 1
BASE 1
COLLECTOR 2
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
0.30
0.40
MUN5111DW1T1 Series
Notes
http://onsemi.com
15
MUN5111DW1T1 Series
Thermal Clad is a trademark of the Bergquist Company
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: ONlit–[email protected]
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: ONlit–[email protected]
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: [email protected]
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–[email protected]
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: ONlit–[email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, UK, Ireland
For additional information, please contact your local
Sales Representative.
http://onsemi.com
16
MUN5111DW1T1/D