ETC MUN5111T1/D

MUN5111T1 Series
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–70/SOT–323 package which is designed for low power surface
mount applications.
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–70/SOT–323 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
PNP SILICON
BIAS RESISTOR
TRANSISTORS
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
3
1
Symbol
Collector Current
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SC–70/SOT–323
CASE 419
STYLE 3
MARKING DIAGRAM
Symbol
Max
Unit
PD
202 (Note 1.)
310 (Note 2.)
1.6 (Note 1.)
2.5 (Note 2.)
mW
Total Device Dissipation
TA = 25°C
Derate above 25°C
6x M
°C/W
Thermal Resistance –
Junction-to-Ambient
RθJA
618 (Note 1.)
403 (Note 2.)
°C/W
Thermal Resistance –
Junction-to-Lead
RθJL
280 (Note 1.)
332 (Note 2.)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
–55 to +150
°C
6x = Specific Device Code
x = (See Marking Table)
M = Date Code
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 4
1
Publication Order Number:
MUN5111T1/D
MUN5111T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MUN5111T1
SC–70/SOT–323
6A
10
10
3000/Tape & Reel
MUN5112T1
SC–70/SOT–323
6B
22
22
3000/Tape & Reel
MUN5113T1
MUN5113T3
SC–70/SOT–323
6C
47
47
3000/Tape & Reel
10,000/Tape & Reel
MUN5114T1
SC–70/SOT–323
6D
10
47
3000/Tape & Reel
MUN5115T1 (Note 3.)
SC–70/SOT–323
6E
10
∞
3000/Tape & Reel
MUN5116T1 (Note 3.)
SC–70/SOT–323
6F
4.7
∞
3000/Tape & Reel
MUN5130T1 (Note 3.)
SC–70/SOT–323
6G
1.0
1.0
3000/Tape & Reel
MUN5131T1 (Note 3.)
SC–70/SOT–323
6H
2.2
2.2
3000/Tape & Reel
MUN5132T1 (Note 3.)
SC–70/SOT–323
6J
4.7
4.7
3000/Tape & Reel
MUN5133T1 (Note 3.)
SC–70/SOT–323
6K
4.7
47
3000/Tape & Reel
MUN5134T1 (Note 3.)
SC–70/SOT–323
6L
22
47
3000/Tape & Reel
MUN5135T1 (Note 3.)
SC–70/SOT–323
6M
2.2
47
3000/Tape & Reel
MUN5136T1
SC–70/SOT–323
6N
100
100
3000/Tape & Reel
MUN5137T1
SC–70/SOT–323
6P
47
22
3000/Tape & Reel
3. New devices. Updated curves to follow in subsequent data sheets.
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MUN5111T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
–
–
100
nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
–
–
500
nAdc
Emitter–Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
–
–
Vdc
Collector–Emitter Breakdown Voltage (Note 4.)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
–
–
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
150
140
–
–
–
–
–
–
–
–
–
–
–
–
–
–
VCE(sat)
–
–
0.25
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
OFF CHARACTERISTICS
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
ON CHARACTERISTICS (Note 4.)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
Collector–Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1
(IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/
MUN5132T1/MUN5133T1/MUN5134T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ)
VOL
MUN5111T1
MUN5112T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5113T1
MUN5136T1
MUN5137T1
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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Vdc
Vdc
MUN5111T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ)
MUN5130T1
MUN5115T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)
MUN5116T1
MUN5131T1
MUN5132T1
VOH
4.9
–
–
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
kΩ
0.8
0.17
–
0.8
0.055
0.38
0.038
1.7
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
Input Resistor
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
Resistor Ratio
MUN5111T1/MUN5112T1/MUN5113T1/
MUN5136T1
MUN5114T1
MUN5115T1/MUN5116T1
MUN5130T1/MUN5131T1/MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5137T1
R1/R2
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
50
0
-50
RθJA = 833°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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4
150
MUN5111T1 Series
1000
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5111T1
TA=-25°C
0.1
25°C
75°C
0.01
0
20
25°C
100
10
-25°C
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
50
1
100
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
100
TA=-25°C
1
0.1
0.01
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0
10
8
9
Figure 5. Output Current versus Input Voltage
10
0.1
100
25°C
75°C
10
0.001
50
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TA=75°C
IC, COLLECTOR CURRENT (mA)
40
4
0
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
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10
MUN5111T1 Series
1000
10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5112T1
IC/IB = 10
1
25°C
TA=-25°C
75°C
0.1
0.01
0
40
20
IC, COLLECTOR CURRENT (mA)
TA=75°C
10
1
Figure 8. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
3
2
1
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=-25°C
10
1
0.1
0.01
0.001
50
Figure 9. Output Capacitance
100
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
0
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
10
25°C
75°C
1
0
10
8
9
Figure 10. Output Current versus Input Voltage
TA=-25°C
0.1
100
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
0
25°C
-25°C
100
10
50
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
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10
MUN5111T1 Series
1
1000
IC/IB = 10
TA=-25°C
25°C
75°C
0.1
0.01
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5113T1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
IC, COLLECTOR CURRENT (mA)
0.6
0.4
0.2
0
0
-25°C
1
0.1
0.01
Figure 14. Output Capacitance
VO = 5 V
1
0
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 15. Output Current versus Input Voltage
100
10
25°C
TA=75°C
10
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
100
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 16. Input Voltage versus Output Current
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10
MUN5111T1 Series
1
180
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5114T1
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
140
-25°C
120
100
80
60
40
20
0
80
TA=75°C
VCE = 10 V
160
2
1
4
6
Figure 17. VCE(sat) versus IC
100
3.5
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
25°C
-25°C
10
VO = 5 V
1
50
Figure 19. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 20. Output Current versus Input Voltage
+12 V
10
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
80 90 100
Figure 18. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
25°C
75°C
TA=-25°C
Typical Application
for PNP BRTs
1
LOAD
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
Figure 22. Inexpensive, Unregulated Current Source
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MUN5111T1 Series
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
0.1
75°C
25°C
–25°C
IC/IB = 10
0.01
0
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
7
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136T1
1000
75°C
TA = –25°C
100
25°C
10
VCE = 10 V
1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 23. Maximum Collector Voltage versus
Collector Current
Figure 24. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
1.0
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
25°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = –25°C
1
VO = 5 V
0
1
2
3
4
TA = –25°C
10
VO = 0.2 V
75°C
0
2
6
7
8
9
10
Figure 26. Output Current versus Input Voltage
100
1
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 25. Output Capacitance
25°C
75°C
10
0.1
0
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.2
0
100
4
6
8
10 12
14
16
IC, COLLECTOR CURRENT (mA)
18
Figure 27. Input Voltage versus Output Current
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20
MUN5111T1 Series
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137T1
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
TA = –25°C
75°C
0.1
25°C
IC/IB = 10
0.01
0
5
10 15
20 25 30 35 40
IC, COLLECTOR CURRENT (mA)
45
50
1000
75°C
TA = –25°C
100
25°C
VCE = 10 V
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 28. Maximum Collector Voltage versus
Collector Current
Figure 29. DC Current Gain
100
1.2
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
1.0
0.8
0.6
0.4
0.2
75°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = –25°C
10
25°C
1
0.1
0.01
0.001
0
VO = 5 V
0
1
2
3
4
VO = 0.2 V
1
TA = –25°C
75°C
25°C
0
6
7
8
9
10
11
Figure 31. Output Current versus Input Voltage
100
10
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 30. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.4
0
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
25
Figure 32. Input Voltage versus Output Current
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MUN5111T1 Series
MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
SC–70/SOT–323 POWER DISSIPATION
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 310 milliwatts.
The power dissipation of the SC–70/SOT–323 is a
function of the pad size. This can vary from the minimum
pad size for soldering to the pad size given for maximum
power dissipation. Power dissipation for a surface mount
device is determined by TJ(max), the maximum rated
junction temperature of the die, RθJA, the thermal
resistance from the device junction to ambient; and the
operating temperature, TA. Using the values provided on
the data sheet, PD can be calculated as follows:
PD =
PD = 150°C – 25°C = 310 milliwatts
403°C/W
The 403°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 310 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, the power dissipation can be doubled
using the same footprint.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
SOLDERING PRECAUTIONS
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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MUN5111T1 Series
SOLDER STENCIL GUIDELINES
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
TYPICAL SOLDER HEATING PROFILE
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 33 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
STEP 1
PREHEAT
ZONE 1
RAMP"
200°C
150°C
STEP 2
STEP 3
VENT
HEATING
SOAK" ZONES 2 & 5
RAMP"
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
STEP 5
STEP 4
HEATING
HEATING
ZONES 3 & 6 ZONES 4 & 7
SPIKE"
SOAK"
205° TO 219°C
PEAK AT
SOLDER JOINT
170°C
160°C
150°C
140°C
100°C
100°C
50°C
STEP 6 STEP 7
VENT COOLING
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TMAX
TIME (3 TO 7 MINUTES TOTAL)
Figure 33. Typical Solder Heating Profile
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MUN5111T1 Series
PACKAGE DIMENSIONS
SC–70/SOT–323
CASE 419–04
ISSUE L
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
B
S
1
2
D
G
C
0.05 (0.002)
J
N
K
H
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13
DIM
A
B
C
D
G
H
J
K
L
N
S
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.032
0.040
0.012
0.016
0.047
0.055
0.000
0.004
0.004
0.010
0.017 REF
0.026 BSC
0.028 REF
0.079
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.00
0.30
0.40
1.20
1.40
0.00
0.10
0.10
0.25
0.425 REF
0.650 BSC
0.700 REF
2.00
2.40
MUN5111T1 Series
Notes
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14
MUN5111T1 Series
Notes
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15
MUN5111T1 Series
Thermal Clad is a registered trademark of the Bergquist Company
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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MUN5111T1/D