NSL35TT1 Advance Information High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications http://onsemi.com 35 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO –35 Vdc Collector-Base Voltage VCBO –50 Vdc Emitter-Base Voltage VEBO –5.0 Vdc IC –1.0 –500 Adc mAdc Rating Collector Current – Peak Collector Current – Continuous Electrostatic Discharge ESD COLLECTOR 3 1 BASE 2 EMITTER HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25°C Derate above 25°C Symbol Max Unit PD (Note 1) 210 mW 1.7 mW/°C RθJA (Note 1) 595 °C/W PD (Note 2) 365 mW 2.9 mW/°C 3 2 Thermal Resistance, Junction to Ambient RθJA (Note 2) 340 °C/W Thermal Resistance, Junction to Lead #3 RθJL 205 °C/W Junction and Storage Temperature Range TJ, Tstg –55 to +150 °C 1 CASE 463 SOT–416/SC–75 STYLE 1 DEVICE MARKING L1 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 X 1.0 inch Pad L1 = Specific Device Code ORDERING INFORMATION Device This document contains information on a new product. Specifications and information herein are subject to change without notice. Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 1 1 NSL35TT1 Package Shipping SOT–416 3000/Tape & Reel Publication Order Number: NSL35TT1/D NSL35TT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max –35 –45 – –50 –65 – –5.0 –7.0 – – –0.03 –0.1 – –0.03 –0.1 – –0.01 –0.1 100 100 100 180 180 150 – – – – – – – – –0.090 –0.200 –0.320 –0.170 –0.270 –0.130 –0.350 –0.450 – –0.350 – –0.81 –0.9 – –0.81 –0.875 – 45 – – 18 – – 40 – – 70 – Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) V(BR)CEO Collector–Base Breakdown Voltage (IC = –0.1 mAdc, IE = 0) V(BR)CBO Emitter–Base Breakdown Voltage (IE = –0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = –35 Vdc, IE = 0) ICBO Collector–Emitter Cutoff Current (VCES = –30 Vdc) ICES Emitter Cutoff Current (VEB = –4.0 Vdc) IEBO Vdc Vdc Vdc Adc Adc Adc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = –100 mA, VCE = –1.0 V) (IC = –100 mA, VCE = –2.0 V) (IC = –250 mA, VCE = –2.0 V) hFE Collector–Emitter Saturation Voltage (Note 3) (IC = –50 mA, IB = –0.5 mA) (IC = –100 mA, IB = –1.0 mA) (IC = –250 mA, IB = –2.5 mA) (IC = –250 mA, IB = –5.0 mA) (IC = –500 mA, IB = –50 mA) VCE(sat) Base–Emitter Saturation Voltage (Note 3) (IC = –150 mA, IB = –20 mA) VBE(sat) Base–Emitter Turn–on Voltage (Note 3) (IC = –150 mA, VCE = –3.0 V) VBE(on) Input Capacitance (VEB = 0 V, f = 1.0 MHz) Cibo Output Capacitance (VCB = 0 V, f = 1.0 MHz) Cobo Turn–On Time (IBI = –50 mA, IC = –500 mA, RL = 3.0 Ω) ton Turn–Off Time (IB1 = IB2 = –50 mA, IC = –500 mA, RL = 3.0 Ω) toff 3. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle ≤ 2% http://onsemi.com 2 V V V pF pF ns ns NSL35TT1 1 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 1 100 0.1 IC/IB = 200 10 50 0.01 TA = 25°C 0.001 0.001 0.01 1 0.1 125°C 0.1 0.01 1 0.1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 1 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 125°C 400 300 25°C 200 TA = –55°C 100 VCE = 5 V 0 0.001 0.01 0.1 125°C 0.01 0.1 Figure 4. Collector Emitter Saturation Voltage vs. Collector Current IC = 1.0 A 0.7 0.6 50 mA 0.4 500 mA 5.0 mA 0.2 100 mA 250 mA 10 mA 0.0001 0.001 0.01 0.1 1 1.2 0.8 0 0.00001 25°C Figure 3. DC Current Gain 0.9 0.1 0.1 IC, COLLECTOR CURRENT (AMPS) TA = 25°C 0.3 TA = –55°C IC, COLLECTOR CURRENT (AMPS) 1 0.5 IC/IB = 50 0.01 0.001 1 VBE(on), BASE EMITTER TURN–ON VOLTAGE (V) hFE, DC CURRENT GAIN 25°C TA = –55°C 0.01 0.001 500 VCE(sat), COLLECTOR EMITTER VOLTAGE (V) IC/IB = 100 1 –55°C 0.8 25°C 0.6 TA = 125°C 0.4 0.2 0 0.001 1 IB, BASE CURRENT (AMPS) 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector Emitter Saturation Voltage vs. Base Current Figure 6. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 3 1 NSL35TT1 50 VCE = 3.0 V Cibo, INPUT CAPACITANCE (pF) VBE(on), BASE EMITTER TURN–ON VOLTAGE (V) 1.2 1 –55°C 0.8 25°C 0.6 TA = 125°C 0.4 0.2 f = 1 MHz IC = 0 A TA = 25°C 45 40 35 30 25 20 15 10 5 0 0 0.001 0.01 1 0.1 0 1 2 3 4 IC, COLLECTOR CURRENT (AMPS) VEB, EMITTER BASE VOLTAGE (V) Figure 7. Base Emitter Turn–On Voltage vs. Collector Current Figure 8. Input Capacitance Cobo, OUTPUT CAPACITANCE (pF) 20 5 6 f = 1 MHz IE = 0 A TA = 25°C 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) VCB, COLLECTOR BASE VOLTAGE (V) Figure 9. Output Capacitance 1 D = 0.50 D = 0.20 P(pk) D = 0.10 0.1 D = 0.05 t1 t2 DUTY CYCLE, D = t1/t2 D = 0.01 Copper Area = 0.048 square inches RθJA = 505.7 °C/W SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 t1, TIME (s) 1 Figure 10. Normalized Thermal Response http://onsemi.com 4 10 100 1000 NSL35TT1 MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.5 min. (3x) 0.5 min. (3x) Unit: mm 0.5 ÉÉÉ ÉÉÉ ÉÉÉ 1.4 1 TYPICAL SOLDERING PATTERN ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ SOT–416/SC–75 POWER DISSIPATION into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 210 milliwatts. The power dissipation of the SOT–416/SC–75 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows: PD = PD = 150°C – 25°C = 210 milliwatts 595°C/W The 595°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 210 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a higher power dissipation can be achieved using the same footprint. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values SOLDERING PRECAUTIONS • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. * * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 5 NSL35TT1 SOLDER STENCIL GUIDELINES or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 1 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. STEP 1 PREHEAT ZONE 1 RAMP" 200°C 150°C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 205° TO 219°C PEAK AT SOLDER JOINT 170°C 160°C 150°C 140°C 100°C 100°C 50°C STEP 6 STEP 7 VENT COOLING SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES TMAX TIME (3 TO 7 MINUTES TOTAL) Figure 1. Typical Solder Heating Profile http://onsemi.com 6 NSL35TT1 PACKAGE DIMENSIONS SC–75/SOT–416 CASE 463–01 ISSUE B –A– S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 D 3 PL 0.20 (0.008) G –B– 1 M B K J 0.20 (0.008) A C L DIM A B C D G H J K L S MILLIMETERS MIN MAX 0.70 0.80 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC --0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR H http://onsemi.com 7 INCHES MIN MAX 0.028 0.031 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC --0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC NSL35TT1 Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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