BC857BTT1, BC857CTT1 Preferred Devices Advance Information General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–416/SC–75 which is designed for low power surface mount applications. http://onsemi.com • Device Marking: COLLECTOR 3 BC857BTT1 = 3F BC857CTT1 = 3G 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector – Emitter Voltage VCEO –45 V Collector – Base Voltage VCBO –50 V Emitter – Base Voltage VEBO –5.0 V IC –100 mAdc Rating Collector Current — Continuous 3 2 1 THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, FR–4 Board (1) TA = 25°C Derated above 25°C PD Thermal Resistance, Junction to Ambient (1) RθJA Total Device Dissipation, FR–4 Board (2) TA = 25°C Derated above 25°C PD Thermal Resistance, Junction to Ambient (2) Junction and Storage Temperature Range Max Unit 200 mW 1.6 mW/°C 600 °C/W CASE 463 SOT–416/SC–75 STYLE 1 DEVICE MARKING 300 mW 2.4 mW/°C RθJA 400 °C/W TJ, Tstg –55 to +150 °C (1) FR–4 @ Minimum Pad (2) FR–4 @ 1.0 × 1.0 Inch Pad See Table ORDERING INFORMATION Device Package Shipping BC857BTT1 SOT–416 3000 / Tape & Reel BC857CTT1 SOT–416 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. This document contains information on a new product. Specifications and information herein are subject to change without notice. Semiconductor Components Industries, LLC, 2000 May, 2000 – Rev. 1 1 Publication Order Number: BC857BTT1/D BC857BTT1, BC857CTT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max –45 — — –50 — — –50 — — –5.0 — — — — — — –15 –4.0 BC857B BC857C — — 150 270 — — BC857B BC857C 220 420 290 520 475 800 — — — — –0.3 –0.65 — — –0.7 –0.9 — — –0.6 — — — –0.75 –0.82 fT 100 — — MHz Output Capacitance (VCB = –10 V, f = 1.0 MHz) Cob — — 4.5 pF Noise Figure (IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) NF — — 10 dB Characteristic Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –10 mA) BC857 Series V(BR)CEO Collector – Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) BC857 Series Collector – Base Breakdown Voltage (IC = –10 mA) BC857 Series Emitter – Base Breakdown Voltage (IE = –1.0 mA) BC857 Series V V(BR)CES V V(BR)CBO V V(BR)EBO Collector Cutoff Current (VCB = –30 V) Collector Cutoff Current (VCB = –30 V, TA = 150°C) ICBO V nA µA ON CHARACTERISTICS DC Current Gain (IC = –10 µA, VCE = –5.0 V) (IC = –2.0 mA, VCE = –5.0 V) hFE Collector – Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) VCE(sat) Base – Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) VBE(sat) Base – Emitter On Voltage (IC = –2.0 mA, VCE = –5.0 V) (IC = –10 mA, VCE = –5.0 V) VBE(on) — V V V SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) http://onsemi.com 2 BC857BTT1, BC857CTT1 TYPICAL CHARACTERISTICS 1.5 –1.0 TA = 25°C –0.9 VCE = –10 V TA = 25°C VBE(sat) @ IC/IB = 10 –0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 –0.7 VBE(on) @ VCE = –10 V –0.6 –0.5 –0.4 –0.3 –0.2 0.3 VCE(sat) @ IC/IB = 10 –0.1 0.2 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 IC, COLLECTOR CURRENT (mAdc) 0 –0.1 –0.2 –100 –200 Figure 1. Normalized DC Current Gain θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR–EMITTER VOLTAGE (V) TA = 25°C –1.2 IC = –10 mA IC = –50 mA IC = –200 mA IC = –100 mA IC = –20 mA –0.4 –0.02 –55°C to +125°C 1.2 1.6 2.0 2.4 2.8 –10 –20 –0.1 –1.0 IB, BASE CURRENT (mA) –0.2 10 Cib 7.0 TA = 25°C 5.0 Cob 3.0 2.0 1.0 –0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –10 –1.0 IC, COLLECTOR CURRENT (mA) –100 Figure 4. Base–Emitter Temperature Coefficient f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) Figure 3. Collector Saturation Region C, CAPACITANCE (pF) –100 1.0 –1.6 0 –50 Figure 2. “Saturation” and “On” Voltages –2.0 –0.8 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –20 –30 –40 400 300 200 150 VCE = –10 V TA = 25°C 100 80 60 40 30 20 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product http://onsemi.com 3 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE BC857BTT1, BC857CTT1 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t, TIME (s) Figure 7. Thermal Response –200 IC, COLLECTOR CURRENT (mA) 1s 3 ms –100 –50 –10 –5.0 –2.0 –1.0 TA = 25°C The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. TJ = 25°C BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT –5.0 –10 –30 –45 –65 –100 VCE, COLLECTOR–EMITTER VOLTAGE (V) Figure 8. Active Region Safe Operating Area http://onsemi.com 4 BC857BTT1, BC857CTT1 INFORMATION FOR USING THE SOT-416 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ Unit: mm 0.5 min. (3x) 1 TYPICAL SOLDERING PATTERN 0.5 0.5 min. (3x) 1.4 SOT–416/SC–75 POWER DISSIPATION The power dissipation of the SOT–416/SC–75 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 200 milliwatts. PD = 150°C – 25°C 600°C/W = 200 milliwatts The 600°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a higher power dissipation can be achieved using the same footprint. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values SOLDERING PRECAUTIONS • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 5 BC857BTT1, BC857CTT1 SOLDER STENCIL GUIDELINES The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure NO TAG shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. STEP 1 PREHEAT ZONE 1 “RAMP” 200°C STEP 2 STEP 3 VENT HEATING “SOAK” ZONES 2 & 5 “RAMP” DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 “SPIKE” “SOAK” STEP 6 STEP 7 VENT COOLING 205° TO 219°C PEAK AT SOLDER JOINT 170°C 160°C 150°C 150°C 140°C 100°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C TMAX TIME (3 TO 7 MINUTES TOTAL) Figure 9. Typical Solder Heating Profile http://onsemi.com 6 BC857BTT1, BC857CTT1 PACKAGE DIMENSIONS SOT–416/SC–75 CASE 463–01 ISSUE B –A– S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 D 3 PL 0.20 (0.008) G –B– 1 M B K J 0.20 (0.008) A C L STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR DIM A B C D G H J K L S MILLIMETERS MIN MAX 0.70 0.80 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC ––– 0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC H STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE http://onsemi.com 7 STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE INCHES MIN MAX 0.028 0.031 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC ––– 0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC BC857BTT1, BC857CTT1 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. 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