STB130NH02L N-CHANNEL 20V - 0.0034 Ω - 90A D2PAK STripFET III POWER MOSFET FOR DC-DC CONVERSION TYPE STB130NH02L ■ ■ ■ ■ ■ ■ VDSS R DS(on) ID 20 V < 0.0044 Ω 90 A(#) TYPICAL RDS(on) = 0.0034 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) 3 1 D2 PAK TO-263 (Suffix “T4”) DESCRIPTION The STB130NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET technology. It is ideal in high performance DC-DC converter applications where efficiency is to be achieved at very high output currents. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SYNCHRONOUS RECTIFICATIONS FOR TELECOM AND COMPUTER ■ OR-ING DIODE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR Parameter Value Unit Drain-source Voltage (VGS = 0) 20 V Drain-gate Voltage (RGS = 20 kΩ) 20 V ± 20 V VGS Gate- source Voltage ID(#) 90 A ID(#) Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C 90 A IDM(•) Drain Current (pulsed) 360 A Total Dissipation at TC = 25°C 150 W 1 W/°C 900 mJ -55 to 175 °C Ptot Derating Factor E AS (2) Tstg Tj Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature (•) Pulse width limit ed by safe operating area. (#) Value limited by wire bonding September 2002 (1) Starting Tj = 25 oC, ID = 45A, VDD = 10V 1/9 STB130NH02L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max °C/W °C/W °C 1.0 62.5 300 ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V V(BR)DSS Min. Typ. Max. 20 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS I D = 250 µA R DS(on) Static Drain-source On Resistance VGS = 10 V I D = 45 A Min. Typ. 1 V 0.0034 0.0044 Ω Typ. Max. Unit DYNAMIC Symbol 2/9 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 10 V C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V f = 1 MHz VGS = 0 RG Gate Input Resistance f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain ID = 45 A Min. 55 S 4450 1126 141 pF pF pF 1.6 Ω STB130NH02L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 10 V I D = 45 A V GS = 10 V R G = 4.7 Ω (Resistive Load, Figure 3) 14 224 Qg Qgs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=10 V ID=90 A VGS=10 V 69 13 9 93 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Test Conditions Min. VDD = 10 V I D = 45 A VGS = 10 V RG = 4.7Ω, (Resistive Load, Figure 3) Turn-off Delay Time Fall Time 69 40 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 90 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 90 A di/dt = 100A/µs T j = 150°C VDD = 15 V (see test circuit, Figure 5) trr Qrr IRRM (*)Pulsed: Pulse duration = 300 µs, duty cycle (•)Pulse width limit ed by safe operating area. Safe Operating Area Test Conditions Min. Typ. VGS = 0 47 58 2.5 Max. Unit 90 360 A A 1.3 V ns nC A 1.5 %. Thermal Impedance 3/9 STB130NH02L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STB130NH02L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . . 5/9 STB130NH02L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STB130NH02L D2PAK MECHANICAL DATA DIM. MIN. mm. TYP. MAX. MIN. inch. TYP. TYP. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 B 0.03 0.7 0.23 0.93 0.001 0.028 0.009 0.037 B2 C 1.14 0.45 1.7 0.6 0.045 0.018 0.067 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 D1 E 10 10.4 0.394 E1 G 8 0.315 8.5 0.409 0.334 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 M 1.4 2.4 1.75 3.2 0.055 0.094 0.069 0.126 R V2 0° 8° 0° 0.4 0.015 8° 7/9 STB130NH02L D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 1.574 T 0.25 0.35 .0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 8/9 inch MIN. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB130NH02L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. 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