STB120NF10 STP120NF10 N-CHANNEL 100V - 0.009 Ω - 120A D²PAK/TO-220 STripFET™ II POWER MOSFET TYPE STB120NF10 STP120NF10 ■ ■ ■ ■ ■ VDSS RDS(on) ID 100 V 100 V < 0.0105 Ω < 0.0105 Ω 120 A 120 A TYPICAL RDS(on) = 0.009 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") 3 1 D2PAK TO-263 (Suffix “T4”) 3 1 2 TO-220 DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, highfrequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ AUDIO AMPLIFIERS ■ POWER TOOLS Ordering Information SALES TYPE STB120NF10 STP120NF10 MARKING B120NF10 P120NF10 PACKAGE TO-263 TO-220 PACKAGING TAPE & REEL TUBE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(•) Ptot dv/dt (1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature (•) Pulse width limited by safe operating area. May 2003 Value 100 100 ± 20 120 85 480 312 2.08 10 550 Unit V V V A A A W W/°C V/ns mJ -55 to 175 °C (1) ISD ≤120A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX (2) Starting T j = 25 oC, ID = 60A, VDD = 50V 1/10 STB120NF10 STP120NF10 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 0.48 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V V(BR)DSS Min. Typ. Max. 100 Unit V 1 10 µA µA ±100 nA Max. Unit 4 V 0.009 0.0105 Ω Typ. Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 250 µA Min. Typ. 2 ID = 60 A DYNAMIC Symbol 2/10 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz VGS = 0 ID = 60 A Min. TBD S 5200 785 325 pF pF pF STB120NF10 STP120NF10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 60 A VDD = 50 V RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 25 90 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=80 V ID=120 A VGS=10 V 172 32 64 233 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Test Conditions Min. ID = 60 A VDD = 50 V RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) Turn-off Delay Time Fall Time 132 68 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 120 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 120 A VDD = 40 V Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM (*)Pulsed: Pulse duration = 300 µs, duty cycle (•)Pulse width limited by safe operating area. Safe Operating Area Test Conditions Min. Typ. VGS = 0 152 760 10 Max. Unit 120 480 A A 1.3 V ns nC A 1.5 %. Thermal Impedance 3/10 STB120NF10 STP120NF10 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10 STB120NF10 STP120NF10 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . . 5/10 STB120NF10 STP120NF10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STB120NF10 STP120NF10 D2PAK MECHANICAL DATA DIM. mm. MIN. TYP. inch. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 10.4 0.394 D1 E 8 10 E1 G 0.315 8.5 0.409 0.334 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 8° 0° R V2 0.4 0° 0.015 8° 7/10 STB120NF10 STP120NF10 TO-220 MECHANICAL DATA DIM. 8/10 mm. MIN. TYP. inch. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.40 0.645 L3 28.90 1.137 L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 DIA 3.75 3.85 0.147 0.151 STB120NF10 STP120NF10 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A inch MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T MAX. 12.992 0.059 13.2 0.504 0.520 0.795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 1.574 T 0.25 0.35 .0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 9/10 STB120NF10 STP120NF10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 10/10