BC546 thru BC548 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (NPN) TO-226AA (TO-92) Features • NPN Silicon Epitaxial Planar Transistors • These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. As complementary types the PNP transistors BC556...BC558 are recommended. • On special request, these transistors are also manufactured in the pin configuration TO-18. 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Mechanical Data max. ∅ 0.022 (0.55) 0.098 (2.5) Dimensions in inches and (millimeters) Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk – 5K per container, 20K/box E7/4K per Ammo mag., 20K/box Bottom View Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbol Value Unit Collector-Base Voltage BC546 BC547 BC548 VCBO 80 50 30 V Collector-Emitter Voltage BC546 BC547 BC548 VCES 80 50 30 V Collector-Emitter Voltage BC546 BC547 BC548 VCEO 65 45 30 V BC546, BC547 BC548 VEBO 6 5 V IC 100 mA Peak Collector Current ICM 200 mA Peak Base Current IBM 200 mA Peak Emitter Current -IEM 200 mA Emitter-Base Voltage Collector Current Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air Ptot RΘJA (1) mW (1) °C/W 500 250 Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Document Number 88160 08-May-02 www.vishay.com 1 BC546 thru BC548 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit A B C hfe VCE = 5 V, IC = 2 mA, f = 1 kHz — — — 220 330 600 — — — — A B C hie VCE = 5 V, IC = 2 mA, f = 1 kHz 1.6 3.2 6 2.7 4.5 8.7 4.5 8.5 15 kΩ A B C hoe VCE = 5 V, IC = 2 mA, f = 1kHz — — — 18 30 60 30 60 110 µS hre VCE = 5 V, IC = 2 mA, f = 1kHz — — — 1.5 • 10-4 2 • 10-4 3 • 10-4 — — — — VCE = 5 V, IC = 10 µA — — — 90 150 270 — — — VCE = 5 V, IC = 2 mA 110 200 420 180 290 500 220 450 800 VCE = 5 V, IC = 100 mA — — — 120 200 400 — — — J Current gain group Small Signal Current Gain Current gain group Input Impedance Current gain group Output Admittance Current gain group Reverse Voltage Transfer Ratio Current gain group Current gain group DC Current Gain Current gain group A B C A B C A B C hFE A B C — Collector Saturation Voltage VCEsat IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA — — 80 200 200 600 mV Base Saturation Voltage VBEsat IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA — — 700 900 — — mV VBE VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA 580 — 660 — 700 720 mV VCE = 80 V VCE = 50 V VCE = 30 V VCE = 80 V, Tj = 125°C VCE = 50 V, Tj = 125°C VCE = 30 V, Tj = 125°C — — — — — — 0.2 0.2 0.2 — — — 15 15 15 4 4 4 nA nA nA µA µA µA fT VCE = 5 V, IC = 10 mA, f = 100 MHz — 300 — MHz Collector-Base Capacitance CCBO VCB = 10 V, f = 1 MHz — 3.5 6 pF Emitter-Base Capacitance CEBO VEB = 0.5 V, f = 1 MHz — 9 — pF F VCE = 5 V, IC = 200 µA, RG = 2 kΩ, f = 1 kHz, ∆f = 200 Hz — 2 10 dB Base-Emitter Voltage Collector-Emitter Cutoff Current BC546 BC547 BC548 BC546 BC547 BC548 Gain-Bandwidth Product Noise Figure www.vishay.com 2 BC546, BC547 BC548 ICES Document Number 88160 08-May-02 BC546 thru BC548 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88160 08-May-02 www.vishay.com 3 BC546 thru BC548 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) www.vishay.com 4 Document Number 88160 08-May-02 BC546 thru BC548 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88160 08-May-02 www.vishay.com 5