BC327 thru BC328 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (PNP) Features TO-226AA (TO-92) • PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. • These types are also available subdivided into three groups, -16, -25, and -40, according to their DC current gain. As complementary types, the NPN transistors BC327 and BC338 are recommended. • On special request, these transistors are also manufactured in the pin configuration TO-18. 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Mechanical Data max. ∅ 0.022 (0.55) 0.098 (2.5) Dimensions in inches and (millimeters) Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk – 5K per container, 20K/box E7/4K per Ammo mag., 20K/box Bottom View Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbol Value Unit Collector-Emitter Voltage BC327 BC328 –VCES 50 30 V Collector-Emitter Voltage BC327 BC328 –VCEO 45 25 V –VEBO 5 V –IC 800 mA –ICM 1 A –IB 100 Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air Ptot RΘJA mA (1) mW (1) °C/W 625 200 Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case. Document Number 88158 08-May-02 www.vishay.com 1 BC327 thru BC328 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Current Gain Group DC Current Gain Current Gain Group Collector-Emitter Cutoff Current Collector Saturation Voltage Base-Emitter Voltage -16 -25 -40 -16 -25 -40 BC327 BC328 BC327 BC328 Test Condition Min Typ Max -VCE = 1 V, -IC = 100 mA 100 160 250 160 250 400 250 400 630 -VCE = 1 V, -IC = 300 mA 60 100 170 130 200 320 — — — -VCE = 45 V -VCE = 25 V -VCE = 45 V, Tamb = 125°C -VCE = 25 V, Tamb = 125°C — — — — 2 2 — — 100 100 10 10 nA nA µA µA -IC — — 0.7 V — — 1.2 V hFE -ICES -VCEsat -VBE = 500 mA, -IB = 50 mA -VCE = 1 V, -IC = 300 mA Unit — Collector-Emitter Breakdown Voltage BC327 -V(BR)CEO BC328 -IC = 10 mA 45 25 — — — — V Collector-Emitter Breakdown Voltage BC327 -V(BR)CES BC328 -IC = 0.1 mA 50 30 — — — — V 5 — — V Emitter-Base Breakdown Voltage Gain-Bandwidth Product Collector-Base Capacitance www.vishay.com 2 -V(BR)EBO fT CCBO -IE = 0.1 mA -VCE = 5 V, -IC = 10 mA f = 50 MHz — 100 — MHz -VCB = 10 V, f = 1 MHz — 12 — pF Document Number 88158 08-May-02 BC327 thru BC328 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88158 08-May-02 www.vishay.com 3 BC327 thru BC328 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) www.vishay.com 4 Document Number 88158 08-May-02 BC327 thru BC328 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88158 08-May-02 www.vishay.com 5