2SC4774 / 2SC4713K Transistors High frequency amplifier transistor, RF switching (60V, 50mA) 2SC4774 / 2SC4713K !External dimensions (Units : mm) !Features 1) Very low output-on resistance (Ron). 2) Low capacitance. Collector power dissipation PC 0.15 0.2 W Tj Tstg 150 −55~+150 °C °C Junction temperature Storage temperature 2.0 1.3 V V V mA 2SC4774 2SC4713K 0.9 12 6 3 50 VEBO IC (2) (1) VCBO VCEO 0~0.1 Unit 0.15 Limits 0.2 2.1 Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 0.65 0.65 (3) 0.3 1.25 !Absolute maximum ratings (Ta=25°C) Parameter 0.7 2SC4774 0.1Min. Each lead has same dimensions (1) Emitter (2) Base (3) Collector ROHM : UMT3 EIAJ : SC-70 2SC4774 2SC4713K UMT3 S SMT3 S Marking Code BM∗ T106 3000 BM∗ T146 3000 Basic ordering unit (pieces) (3) 1.6 2.8 0.8 0~0.1 0.3Min. 1.1 FE 0.15 ∗Denotes h 0.4 Type Package hFE (2) !Packaging specifications and hFE 0.95 0.95 1.9 2.9 (1) 2SC4713K Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Parameter BVCBO BVCEO BVEBO − − − V V V IC=10µA IC=1mA Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Output-on resistance 12 6 3 ICBO − 0.5 − 0.3 µA µA V VCB=10V IEBO 560 − 1.7 − MHz pF − Ω VCE(sat) − hFE 270 fT Cob 300 − − − − − − − − 800 1 Ron − 2 0.5 Conditions IE=10µA VEB=2V IC/IB=10mA/1mA VCE/IC=10V/10mA VCE=5V, IC=10mA VCB=10V, IE=0A, f=1MHz IB=3mA, VI=100mVrms, f=500kHz (1) Emitter (2) Base (3) Collector