ETC 2SC4562R

Transistor
2SC4562
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1748
Unit: mm
2.1±0.1
■ Features
+0.1
0.3–0
0.65
1.3±0.1
0.65
1
3
2
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
+0.1
0 to 0.1
Symbol
0.15–0.05
(Ta=25˚C)
Parameter
■ Electrical Characteristics
0.425
0.2
■ Absolute Maximum Ratings
1.25±0.1
0.7±0.1
●
2.0±0.2
●
High transition frequency fT.
Small collector output capacitance Cob.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.9±0.1
●
0.425
1:Base
2:Emitter
3:Collector
0.2±0.1
EIAJ:SC–70
S–Mini Type Package
Marking symbol : AM
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
ICBO
VCB = 10V, IE = 0
0.1
µA
ICEO
VCE = 10V, IB = 0
100
µA
Collector to base voltage
VCBO
IC = 10µA, IE = 0
50
V
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
50
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
5
V
Collector cutoff current
*
Forward current transfer ratio
hFE
Collector to emitter saturation voltage
VCE(sat)
IC = 10mA, IB = 1mA
0.06
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
250
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
1.5
pF
*h
FE
VCE = 10V, IC = 2mA
200
500
0.3
V
Rank classification
Rank
Q
R
hFE
200 ~ 400
250 ~ 500
Marking Symbol
AMQ
AMR
1
Transistor
2SC4562
PC — Ta
IC — VCE
60
100
160
120
80
40
80
IB=300µA
250µA
60
200µA
150µA
40
100µA
20
40
Ta=75˚C
30
–25˚C
20
10
50µA
0
40
60
80 100 120 140 160
0
0
2
4
10
3
1
0.3
Ta=75˚C
25˚C
–25˚C
0.03
0.01
30
100
300
1000
Collector current IC (mA)
IE=0
f=1MHz
Ta=25˚C
5
4
3
2
1
0
1
3
10
0.2
30
100
Collector to base voltage VCB (V)
0.4
0.6
0.8
1.2
600
VCB=10V
Ta=25˚C
500
Ta=75˚C
400
25˚C
–25˚C
300
200
100
0
0.1
1.0
Base to emitter voltage VBE (V)
fT — I E
0.3
1
3
10
30
Collector current IC (mA)
Cob — VCB
6
0
VCE=10V
Forward current transfer ratio hFE
30
10
12
600
IC/IB=10
3
10
hFE — IC
100
1
8
Collector to emitter voltage VCE (V)
VCE(sat) — IC
0.1
6
Transition frequency fT (MHz)
20
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
25˚C
50
Collector current IC (mA)
200
0
Collector output capacitance Cob (pF)
VCE=10V
Ta=25˚C
0
2
IC — VBE
120
Collector current IC (mA)
Collector power dissipation PC (mW)
240
100
500
400
300
200
100
0
– 0.1 – 0.3
–1
–3
–10
–30
Emitter current IE (mA)
–100
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2001 MAR