Transistor 2SC4562 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1748 Unit: mm 2.1±0.1 ■ Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 0 to 0.1 Symbol 0.15–0.05 (Ta=25˚C) Parameter ■ Electrical Characteristics 0.425 0.2 ■ Absolute Maximum Ratings 1.25±0.1 0.7±0.1 ● 2.0±0.2 ● High transition frequency fT. Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 ● 0.425 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : AM (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 10V, IE = 0 0.1 µA ICEO VCE = 10V, IB = 0 100 µA Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V Collector cutoff current * Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.06 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 250 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 1.5 pF *h FE VCE = 10V, IC = 2mA 200 500 0.3 V Rank classification Rank Q R hFE 200 ~ 400 250 ~ 500 Marking Symbol AMQ AMR 1 Transistor 2SC4562 PC — Ta IC — VCE 60 100 160 120 80 40 80 IB=300µA 250µA 60 200µA 150µA 40 100µA 20 40 Ta=75˚C 30 –25˚C 20 10 50µA 0 40 60 80 100 120 140 160 0 0 2 4 10 3 1 0.3 Ta=75˚C 25˚C –25˚C 0.03 0.01 30 100 300 1000 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 5 4 3 2 1 0 1 3 10 0.2 30 100 Collector to base voltage VCB (V) 0.4 0.6 0.8 1.2 600 VCB=10V Ta=25˚C 500 Ta=75˚C 400 25˚C –25˚C 300 200 100 0 0.1 1.0 Base to emitter voltage VBE (V) fT — I E 0.3 1 3 10 30 Collector current IC (mA) Cob — VCB 6 0 VCE=10V Forward current transfer ratio hFE 30 10 12 600 IC/IB=10 3 10 hFE — IC 100 1 8 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.1 6 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 50 Collector current IC (mA) 200 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 0 2 IC — VBE 120 Collector current IC (mA) Collector power dissipation PC (mW) 240 100 500 400 300 200 100 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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