Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2206 Unit: mm 6.9±0.1 1.0 0.85 (Ta=25˚C) 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V Peak collector current ICP –60 mA Collector current IC –30 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Symbol 2.5 1:Base 2:Collector 3:Emitter 1 2.5 EIAJ:SC–71 M Type Mold Package max Unit VCB = –10V, IE = 0 – 0.1 µA ICEO VCE = –20V, IB = 0 –100 µA IEBO VEB = –5V, IC = 0 –10 µA ICBO Emitter cutoff current 2 (Ta=25˚C) Parameter Collector cutoff current 3 0.45±0.05 1.25±0.05 ■ Absolute Maximum Ratings 4.5±0.1 2.4±0.2 2.0±0.2 3.5±0.1 7 0.4 0. ● 1.0 R ● High transition frequency fT. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 ● 2.5±0.1 1.5 R0.9 R0.9 4.1±0.2 1.5 ■ Features * Conditions min typ Forward current transfer ratio hFE VCE = –10V, IC = –1mA 70 Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 150 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Noise figure NF VCB = –10V, IE = 1mA, f = 5MHz 2.8 4.0 dB Reverse transfer impedance Zrb VCB = –10V, IE = 1mA, f = 2MHz 22 50 Ω Common emitter reverse transfer capacitance Cre VCE = –10V, IC = –1mA, f = 10.7MHz 1.2 2.0 pF *h FE 220 300 MHz IC = –10mA, IB = –1mA – 0.1 V VCE = –10V, IC = –1mA – 0.7 V Rank classification Rank B C hFE 70 ~ 140 110 ~ 220 1 2SA1254 Transistor PC — Ta IC — VCE –25 400 350 300 250 200 150 100 IB=–250µA –20 –200µA –15 –150µA –100µA –30 –10 –3 –1 Ta=75˚C 25˚C – 0.1 –50µA –25˚C – 0.03 50 0 40 60 80 100 120 140 160 0 –2 –4 –6 Ta=75˚C 25˚C –25˚C –60 –40 –20 0 – 0.1 – 0.3 –1 –3 –10 –30 Collector output capacitance Cob (pF) –100 f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 – 0.1 – 0.3 –100 Collector current IC (mA) –1 –3 –10 –30 –100 Collector to base voltage VCB (V) fT — IE 24 20 400 300 200 100 1 3 IC=–1mA f=10.7MHz Ta=25˚C 4 3 2 1 0 –1 –3 10 30 Emitter current IE (mA) 100 –10 –30 –100 NF — IE VCB=–10V f=100MHz Ta=25˚C 4 16 12 8 3 2 1 4 0.3 –100 5 Noise figure NF (dB) Power gain PG (dB) 500 –30 Collector to emitter voltage VCE (V) VCE=–10V f=100MHz Ta=25˚C VCB=–10V Ta=25˚C –10 5 P G — IC 600 –3 Cre — VCE 6 VCE=–10V –1 Collector current IC (mA) Cob — VCB –120 –80 – 0.01 – 0.1 – 0.3 –10 Collector to emitter voltage VCE (V) hFE — IC 0 0.1 –8 Common emitter reverse transfer capacitance Cre (pF) 20 Ambient temperature Ta (˚C) Forward current transfer ratio hFE IC/IB=10 – 0.3 –10 –5 0 Transition frequency fT (MHz) Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 450 0 2 VCE(sat) — IC –100 –30 Collector current IC (mA) Collector power dissipation PC (mW) 500 0 – 0.1 – 0.3 –1 –3 –10 –30 Collector current IC (mA) –100 0 0.1 0.3 1 3 Emitter current IE (mA) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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