2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1220 Power Amplifier Applications · Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 6 V Collector current IC 1.5 A Base current IB 1.0 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.0 10 W Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2002-07-23 2SD1220 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 150 V, IE = 0 ― ― 1.0 µA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 1.0 µA V (BR) CEO IC = 10 mA, IB = 0 150 ― ― V 60 ― 320 IC = 500 mA, IB = 50 mA ― ― 1.5 V VCE = 5 V, IC = 5 mA 0.5 ― 0.8 V VCE = 5 V, IC = 200 mA 20 100 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 13 20 pF Collector-emitter breakdown voltage hFE VCE = 5 V, IC = 200 mA (Note) DC current gain Collector-emitter saturation voltage VCE (sat) Base-emitter voltage VBE Transition frequency fT Collector output capacitance Note: hFE classification Cob R: 60 to 120, O: 100 to 200, Y: 160 to 320 Marking D1220 Product No. Lot No. hFE Classification Explanation of Lot No. Month of manufacture: January to December are denoted by letters A to L respectively. Year of manufacture: last decimal digit of the year of manufacture 2 2002-07-23 2SD1220 IC – VCE 1.6 100 IC – VBE 1.6 80 40 60 (A) 5 0.8 3 2 0.4 1.2 IC 10 Collector current (A) VCE = 5 V Tc = 25°C 1.2 IC Collector current Common emitter Common emitter 20 0.8 25 Tc = 100°C 0 0.4 IB = 1 mA 0 0 0 4 8 12 Collector-emitter voltage 16 VCE 0 0 20 0.4 0.8 hFE 10 VCE = 2 V 5 3 Tc = 100°C 0 100 50 30 Common emitter Common emitter VCE = 10 V Tc = 25°C 5V 50 100 300 Collector current 500 IC 10 20 1000 50 (mA) 100 VCE (sat) – IC (mA) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) IC 1000 0.5 Common emitter Tc = 25°C 0.1 0.01 10 300 Collector current 0.5 0.03 (V) 25 10 DC current gain DC current gain hFE 300 5 0.05 2.0 hFE – IC 30 0.3 1.6 Base-emitter voltage VBE (V) hFE – IC 1 20 1.2 IC/IB = 10 5 30 100 Collector current 300 IC Common emitter 0.3 0.1 Tc = 100°C 0.05 25 0.03 0 0.01 10 1000 (mA) IC/IB = 10 30 100 Collector current 3 300 IC 1000 (mA) 2002-07-23 2SD1220 fT – IC Cob – VCB 100 Transition frequency Collector output capacitance Cob (pF) Common emitter 300 Tc = 25°C VCE = 5 V fT (MHz) 500 100 2 50 30 Common emitter 50 f = 1 MHz 30 Tc = 25°C 10 5 2 1 10 2 5 10 30 100 Collector current IC 300 3 Safe Operating Area 3 IC max (pulsed)* (A) IC max (continuous) (2) (3) 1 ms* 0.5 10 ms* 100 ms* 1 IC Collector current PC (W) Collector power dissipation (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink (1) 6 0 0 (V) 5 8 2 100 Collector-base voltage VCB PC – Ta 4 30 (mA) 12 10 10 DC operation Tc = 25°C 0.3 *: Single nonrepetitive pulse 0.1 Tc = 25°C Curves must be derated linearly 25 50 75 100 125 150 175 0.05 with increase in temperature. Ambient temperature Ta (°C) 0.03 2 VCEO max 5 10 30 Collector-emitter voltage 4 100 VCE 300 (V) 2002-07-23 2SD1220 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2002-07-23