2SD2414(SM) TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications · Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 7 A Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.5 40 W JEDEC ― ― Tj 150 °C JEITA Tstg −55 to 150 °C TOSHIBA 2-10S2 Weight: 1.4 g (typ.) 1 2003-02-04 2SD2414(SM) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ― ― 5 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 5 µA V (BR) CEO IC = 50 mA, IB = 0 80 ― ― V Collector-emitter breakdown voltage hFE (1) VCE = 1 V, IC = 1 A 100 ― 320 hFE (2) VCE = 1 V, IC = 4 A 30 ― ― Collector-emitter saturation voltage VCE (sat) IC = 4 A, IB = 0.4 A ― 0.25 0.5 V Base-emitter saturation voltage VBE (sat) IC = 4 A, IB = 0.4 A ― 0.9 1.4 V fT VCE = 4 V, IC = 1 A ― 10 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 200 ― pF ― 0.4 ― ― 2.5 ― ― 0.5 ― Transition frequency Collector output capacitance ton 20 µs Input IB1 Turn-on time Cob Storage time tstg IB2 Switching time IB1 IB2 Output 10 Ω DC current gain µs VCC ≈ 30 V Fall time tf IB1 = −IB2 = 0.3 A, duty cycle ≤ 1% Marking D2414 Product No. Lot No. Explanation of Lot No. Month of manufacture (January to December are denoted by letters A to L respectively.) Year of manufacture (Last decimal digit of the year of manufacture) 2 2003-02-04 2SD2414(SM) IC – VCE VCE – IC 8 1.2 100 80 Common emitter (V) 160 VCE Collector-emitter voltage Collector current IC (A) Tc = 25°C 60 6 40 4 30 20 2 IB = 10 mA 0 0 2 4 6 8 Collector-emitter voltage VCE Common emitter Tc = 25°C 1.0 100 150 200 300 400 IB = 30 mA 0.6 700 0.2 1 (V) 2 3 VCE – IC (V) VCE IB = 20 mA 0.8 100 Collector-emitter voltage (V) VCE Collector-emitter voltage IC 8 7 (A) 200 0.6 300 400 0.4 500 700 600 0.2 1 2 3 4 5 IC 6 Common emitter Tc = −55°C 1.0 0.8 150 60 1 2 3 Collector-emitter saturation voltage VCE (sat) (V) VCE = 1 V −55 30 10 0.3 Collector current 1 IC 4 3 5 IC 6 7 8 (A) VCE (sat) – IC 2 100 0.1 500 600 700 Collector current 25 50 100 0.2 (A) Common emitter Tc = 100°C 300 400 0.4 hFE – IC 300 200 0.6 0 0 7 IB = 30 mA 500 hFE 6 VCE – IC 1.0 Collector current DC current gain 5 1.2 Common emitter Tc = 100°C 5 0.03 4 Collector current 1.2 0 0 500 600 0.4 0 0 10 60 0.8 1 (A) IC/IB = 10 0.5 0.3 0.1 Tc = 100°C 25 0.05 0.02 0.02 10 Common emitter 0.1 −55 0.3 Collector current 3 1 IC 3 10 (A) 2003-02-04 2SD2414(SM) IC – VBE 8 Common emitter IC/IB = 10 Common emitter VCE = 1 V (A) 3 Tc = −55°C 6 IC 1 0.5 100 25 0.3 0.1 0.02 Collector current Base-emitter saturation voltage VBE (sat) (V) VBE (sat) – IC 5 0.1 0.3 Collector current 1 IC 3 10 4 2 Tc = 100°C (A) −55 25 0 0 0.4 0.8 1.2 1.6 Base-emitter voltage VBE 2.0 (V) Safe Operating Area 10 IC max (pulsed)* 1 ms* IC max (continuous) 3 10 ms* Collector current IC (A) 5 DC operation Tc = 25°C 100 ms* 1 0.5 0.3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.1 VCEO max 3 5 10 30 Collector-emitter voltage VCE 50 100 (V) 4 2003-02-04 2SD2414(SM) RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2003-02-04