2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 High Voltage Switching Applications Unit: mm · High voltage: VCEO = 150 V · High transition frequency: fT = 120 MHz · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate) · Complementary to 2SA1200 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 10 mA PC 500 Collector power dissipation PC 800 (Note 1) Junction temperature Storage temperature range PW-MINI mW Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 2 Note 1: Mounted on ceramic substrate (250 mm × 0.8 t) 1 2002-08-13 2SC2880 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 200 V, IE = 0 ― ― 0.1 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 0.1 µA VCE = 5 V, IC = 10 mA 70 ― 240 ― VCE (sat) IC = 10 mA, IB = 1 mA ― ― 0.5 V Base-emitter voltage VBE VCE = 5 V, IC = 30 mA ― ― 1 V Transition frequency fT VCE = 30 V, IC = 10 mA ― 120 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 3.5 5.0 pF hFE DC current gain (Note 2) Collector-emitter saturation voltage Collector output capacitance Cob Note 2: hFE classification O: 70 to 140, Y: 120 to 240 Marking Type name hFE classification AO 2 2002-08-13 2SC2880 IC – VCE hFE – IC 50 500 500 mA 1 mA Common emitter 300 Ta = 25°C hFE 300 mA 40 DC current gain Collector current IC (mA) 2 mA 30 200 mA 20 10 100 30 IB = 100 mA 10 10 0.5 Common emitter 1 3 Ta = 25°C 0 0 2 6 4 10 8 Collector-emitter voltage VCE 30 IC 100 (mA) 12 (V) hFE – IC VCE (sat) – IC 3 VCE = 5 V Ta = 100°C hFE Collector-emitter saturation voltage VCE (sat) (V) Common emitter 300 25 100 -25 50 30 10 0.5 10 Collector current 500 DC current gain 5 VCE = 2 V 50 1 3 10 Collector current 30 IC Common emitter Ta = 25°C 1 10 0.3 5 0.1 0.05 0.5 100 IC/IB = 20 0.5 1 3 (mA) 10 Collector current 30 IC 100 (mA) IC – VBE 50 VCE (sat) – IC Common emitter VCE = 5 V (mA) Common emitter IC/IB = 10 IC 1 Collector current Collector-emitter saturation voltage VCE (sat) (V) 3 0.5 Ta = 100°C 0.3 25 -25 40 Ta = 100°C 30 -25 25 20 10 0.1 0.05 0.5 1 3 10 Collector current 30 IC 0 0 100 (mA) 0.2 0.4 0.6 0.8 Base-emitter voltage VBE 3 1.0 1.2 (V) 2002-08-13 2SC2880 fT – IC Safe Operating Area 300 500 Common emitter Ta = 25°C (mA) VCE = 30 V IC 100 50 Collector current Transition frequency fT (MHz) 300 10 30 2 10 IC max (pulse)* 100 100 ms* IC max (continuous) 50 500 ms* 30 DC operation Ta = 25°C 10 *: Single nonrepetitive pulse 5 Ta = 25°C 3 Curves must be derated linearly with increase in temperature Tested without a substrate 5 0.6 1 3 10 Collector current 30 IC 1 1 100 3 10 VCEO max 30 Collector-emitter voltage (mA) 100 VCE 300 (V) PC – Ta (1) Mounted on ceramic substrate Collector power dissipation (250 mm2 ´ 0.8 t) 1000 (2) No heat sink PC (mW) 1200 800 600 (1) (2) 400 200 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2002-08-13 2SC2880 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2002-08-13