2SK1313(L)(S), 2SK1314(L)(S) Silicon N-Channel MOS FET ADE-208-1266 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 1 2 3 3 D G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1313(L)(S), 2SK1314(L)(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1313 Symbol Ratings Unit VDSS 450 V 2SK1314 500 Gate to source voltage VGSS Drain current ID Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 ±30 V 5 A 20 A 5 A Channel dissipation Pch* 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SK1313(L)(S), 2SK1314(L)(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1313 V(BR)DSS 450 breakdown voltage 2SK1314 500 Typ Max Unit Test conditions — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±30 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±25 V, VDS = 0 Zero gate voltage 2SK1313 I DSS — — 250 µA VDS = 360 V, VGS = 0 drain current 2SK1314 Gate to source cutoff voltage VDS = 400 V, VGS = 0 VGS(off) 2.0 — 3.0 Static Drain to source 2SK1313 RDS(on) — 1.0 1.4 on state resistance — 1.2 1.5 2SK1314 V I D = 1 mA, VDS = 10 V I D = 2.5 A, VGS = 10 V *1 Forward transfer admittance |yfs| 2.5 4.0 — S I D = 2.5 A, VDS = 10 V *1 Input capacitance Ciss — 640 — pF VDS = 10 V, VGS = 0, Output capacitance Coss — 160 — pF f = 1 MHz Reverse transfer capacitance Crss — 20 — pF Turn-on delay time t d(on) — 10 — ns I D = 2.5 A, VGS = 10 V, Rise time tr — 25 — ns RL = 12 Turn-off delay time t d(off) — 50 — ns Fall time tf — 30 — ns Body to drain diode forward voltage VDF — 0.95 — V I F = 5 A, VGS = 0 Body to drain diode reverse recovery time t rr — 300 — ns I F = 5 A, VGS = 0, diF/dt = 100 A/µs Note: 1. Pulse test See characteristic curves of 2SK1155, 2SK1156. 3 2SK1313(L)(S), 2SK1314(L)(S) Power vs. Temperature Derating Channel Dissipation Pch (W) 60 40 20 0 4 50 100 Case Temperature TC (°C) 150 2SK1313(L)(S), 2SK1314(L)(S) Package Dimensions As of January, 2001 Unit: mm 2.54 ± 0.5 (1.4) 2.54 ± 0.5 11.3 ± 0.5 10.0 1.27 ± 0.2 0.2 0.86 +– 0.1 0.76 ± 0.1 11.0 ± 0.5 1.2 ± 0.2 4.44 ± 0.2 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 10.2 ± 0.3 2.59 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (L) — — 1.4 g 5 2SK1313(L)(S), 2SK1314(L)(S) As of January, 2001 Unit: mm 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.3 3.0 +– 0.5 1.27 ± 0.2 1.2 ± 0.2 7.8 7.0 (1.5) 0.2 0.1 +– 0.1 2.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 6 1.7 7.8 6.6 1.3 ± 0.15 0.3 10.0 +– 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 LDPAK (S)-(1) — — 1.3 g 2SK1313(L)(S), 2SK1314(L)(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 ± 0.2 0.3 10.0 +– 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 0.2 0.1 +– 0.1 2.2 1.2 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.3 5.0 +– 0.5 1.27 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(2) — — 1.35 g 7 2SK1313(L)(S), 2SK1314(L)(S) Cautions 1. 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