ETC 2SK2735(L)|2SJ2735(S)

2SK2735(L), 2SK2735(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-543 (Z)
1st. Edition
Sep. 1997
Features
• Low on-resistance
R DS = 20 mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D
1 2
3
G
S
1 2
3
1. Gate
2. Drain
3. Source
4. Drain
2SK2735(L), 2SK2735(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
20
A
80
A
20
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
2
1
Channel dissipation
Pch*
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
2
2SK2735(L), 2SK2735(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
30
—
—
V
I D = 10mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16V, VDS = 0
Zero gate voltege drain
current
I DSS
—
—
10
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off)
1.0
—
2.0
V
I D = 1mA, VDS = 10V
Static drain to source on state RDS(on)
—
20
28
mΩ
I D = 10A, VGS = 10V*1
resistance
RDS(on)
—
35
50
mΩ
I D = 10A, VGS = 4V*1
Forward transfer admittance
|yfs|
8
16
—
S
I D = 10A, VDS = 10V*1
Input capacitance
Ciss
—
750
—
pF
VDS = 10V
Output capacitance
Coss
—
520
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
210
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
16
—
ns
I D = 10A, VGS = 10V
Rise time
tr
—
225
—
ns
RL = 1Ω
Turn-off delay time
t d(off)
—
85
—
ns
Fall time
tf
—
90
—
ns
Body to drain diode forward
voltage
VDF
—
1.0
—
V
I F = 20A, VGS = 0
diF/ dt = 50A/µs
Body to drain diode reverse
recovery time
t rr
—
40
—
V
I F = 20A, VGS = 0
diF/ dt = 50A/µs
Note:
1. Pulse test
See characteristics curves of 2SK2684
3
2SK2735(L), 2SK2735(S)
Main Characteristics
Power vs. Temperature Derating
500
10
5
I D (A)
Case Temperature
Operation in
this area is
limited by R DS(on)
200
16
V DS
VDD = 5 V
10 V
25 V
12
V GS
20
10
8
V DD = 25 V
10 V
5V
8
16
24
32
Gate Charge Qg (nc)
4
0
40
V GS (V)
40
0
4
20
I D = 20 A
Gate to Source Voltage
Drain to Source Voltage
V DS (V)
Dynamic Input Characteristics
30
s
m
s
(1
sh
ot
)
Ta = 25 °C
0.5
3
30
0.1 0.3
1
10
100
Drain to Source Voltage V DS (V)
Tc (°C)
50
µs
)
150
10
m
°C
100
=
25
50
0
1
=
2
10
c
Drain Current
20
1
0
PW
µs
50
(T
10
100
n
tio
ra
pe
O
20
200
C
D
Channel Dissipation
30
Maximum Safe Operation Area
10
Pch (W)
40
2SK2735(L), 2SK2735(S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.05
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 6.25 °C/W, Tc = 25 °C
0.02
1
0.0
0.03
t
ho
lse
PDM
Pu
D=
1s
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
Pulse Width
100 m
1
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
10
PW (S)
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 10 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
5
2SK2735(L), 2SK2735(S)
Package Dimensions
As of January, 2001
1.7 ± 0.5
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
4.7 ± 0.5
1.2 ± 0.3
16.2 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
3.1 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
6
DPAK (L)-(2)
—
—
0.42 g
2SK2735(L), 2SK2735(S)
As of January, 2001
2.3 ± 0.2
0.55 ± 0.1
(4.9)
(5.3)
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.7 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DPAK (S)-(1),(2)
—
Conforms
0.28 g
7
2SK2735(L), 2SK2735(S)
As of January, 2001
(0.1)
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
(0.1)
6.5 ± 0.5
5.4 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
8
DPAK (S)-(3)
—
Conforms
0.28 g
2SK2735(L), 2SK2735(S)
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9