ETC 2SK2553(L)

2SK2553(L), 2SK2553(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-357H (Z)
9th. Edition
Feb. 1999
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
R DS(on) = 7 mΩ typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4
4
1 2
1
2
3
3
D
G
S
1. Gate
2. Drain
3. Source
4. Drain
2SK2553
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
50
A
200
A
50
A
45
A
174
mJ
75
W
Drain peak current
I D(pulse)
Body to drain diode reverse drain current
I DR
Avalanche current
Avalanche energy
I AP
Note 1
Note 3
EAR
Note 3
Note 2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2
2SK2553
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
10
µA
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
7
10
mΩ
I D = 25 A
VGS = 10 V Note 1
—
10
16
mΩ
I D = 25 A
VGS = 4 V Note 1
Forward transfer admittance
|yfs|
35
55
—
S
I D = 25 A
VDS = 10 V Note 1
Input capacitance
Ciss
—
3550
—
pF
VDS = 10 V
Output capacitance
Coss
—
1760
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
500
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
35
—
ns
I D = 25 A
Rise time
tr
—
230
—
ns
VGS = 10 V
Turn-off delay time
t d(off)
—
470
—
ns
RL = 1.2 Ω
Fall time
tf
—
360
—
ns
Body to drain diode forward
voltage
VDF
—
0.85
—
V
I F = 50 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
135
—
ns
I F = 50 A, VGS = 0
diF / dt = 50 A / µs
Note
1. Pulse Test
See characteristic curves of 2SK2529.
3
2SK2553
Power vs. Temperature Derating
I D (A)
500
100
20
1
10
Operation in
this area is
limited by R DS(on)
µs
µs
m
s
m
s
(1
sh
n
ot
)
c
(T
=
)
°C
25
5
=
tio
ra
10
0
pe
25
PW
50
10
O
50
10
200
Drain Current
75
Maximum Safe Operation Area
C
D
Channel Dissipation
Pch (W)
100
2
0
50
100
Case Temperature
150
1
Ta = 25 °C
0.5
3
30
0.1 0.3
1
10
100
Drain to Source Voltage V DS (V)
200
Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.1
0.03
0.01
10 µ
0.2
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 1.67 °C/W, Tc = 25 °C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
o
h
1s
100 µ
PW
T
PW
T
1m
10 m
Pulse Width
4
D=
100 m
PW (S)
1
10
2SK2553
Avalanche Test Circuit
Avalanche Waveform
EAR =
L
V DS
Monitor
1
2
• L • I AP •
2
VDSS
VDSS – V DD
I AP
Monitor
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 30 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
5
2SK2553
Package Dimensions
As of January, 2001
Unit: mm
2.54 ± 0.5
(1.4)
2.54 ± 0.5
11.3 ± 0.5
10.0
1.27 ± 0.2
0.2
0.86 +– 0.1
0.76 ± 0.1
11.0 ± 0.5
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
10.2 ± 0.3
2.59 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
6
LDPAK (L)
—
—
1.4 g
2SK2553
As of January, 2001
Unit: mm
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
3.0 +– 0.5
1.27 ± 0.2
1.2 ± 0.2
(1.5)
7.8
7.0
1.7
7.8
6.6
1.3 ± 0.15
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
LDPAK (S)-(1)
—
—
1.3 g
7
2SK2553
As of January, 2001
Unit: mm
(1.5)
7.8
7.0
1.7
7.8
6.6
1.3 ± 0.2
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
1.2 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
5.0 +– 0.5
1.27 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
8
LDPAK (S)-(2)
—
—
1.35 g
2SK2553
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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