H5N2505DL, H5N2505DS Silicon N Channel MOS FET High Speed Power Switching ADE-208-1376 (Z) Target Specification 1st. Edition Mar. 2001 Features • Low on-resistance • Low drive current • High speed switching Outline DPAK-2 4 4 1 2 D 3 H5N2505DS G 1 2 3 H5N2505DL S 1. Gate 2. Drain 3. Source 4. Drain H5N2505DL, H5N2505DS Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS ±30 V Drain current ID (5) A (20) A (5) A (20) A Note1 Drain peak current ID Body-drain diode reverse drain current I DR Body-drain diode reverse drain peak current I DR Channel dissipation Pch Note2 25 W Channel to case Thermal Impedance θ ch-c 5 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW 10 µs, duty cycle 1% 2. Value at Tc = 25°C 2 (pulse) Note1 (pulse) H5N2505DL, H5N2505DS Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 250 — — V I D = 10 mA, VGS = 0 Gate to source leak current I GSS — — ±0.1 µA VGS = ±30 V, VDS = 0 Zero gate voltage drain current I DSS — — 1 µA VDS = 250 V, VGS = 0 Gate to source cutoff voltage VGS(off) (3.0) — (4.5) V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| (2.0) (3.3) — S I D = 2.5 A, VDS = 10 V Note4 Static drain to source on state resistance RDS(on) — (0.68) (0.89) Input capacitance Ciss — (300) — pF VDS = 25 V Output capacitance Coss — (45) — pF VGS = 0 Reverse transfer capacitance Crss — (13) — pF f = 1 MHz Total gate charge Qg — (9.8) — nC VDD = 200 V Gate to source charge Qgs — (1.8) — nC VGS = 10 V Gate to drain charge Qgd — (5.1) — nC ID = 5 A Turn-on delay time td(on) — (18) — ns I D = 2.5 A Rise time tr — (14) — ns VGS = 10 V Turn-off delay time td(off) — (46) — ns RL = 50 Fall time tf — (11) — ns Rg = 10 Body-drain diode forward voltage VDF — (1.0) (1.5) V I F = 5 A, VGS = 0 Body-drain diode reverse recovery time trr — (100) — ns I F = 5 A, VGS = 0 Body-drain diode reverse recovery charge Qrr — (320) — nC diF/dt = 100 A/µs Note: I D = 2.5 A, VGS = 10 V Note4 4. Pulse measurement 3 H5N2505DL, H5N2505DS Package Dimensions As of January, 2001 1.7 ± 0.5 Unit: mm 2.3 ± 0.2 0.55 ± 0.1 4.7 ± 0.5 1.2 ± 0.3 16.2 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 3.1 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 4 DPAK (L)-(2) — — 0.42 g H5N2505DL, H5N2505DS As of January, 2001 2.3 ± 0.2 0.55 ± 0.1 (4.9) (5.3) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.7 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(1),(2) — Conforms 0.28 g 5 H5N2505DL, H5N2505DS As of January, 2001 (0.1) 2.3 ± 0.2 0.55 ± 0.1 (5.1) (5.1) (0.1) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 6 DPAK (S)-(3) — Conforms 0.28 g H5N2505DL, H5N2505DS Cautions 1. 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